JPS5771894A - Preparation of single crystal of semiconductor - Google Patents

Preparation of single crystal of semiconductor

Info

Publication number
JPS5771894A
JPS5771894A JP55144664A JP14466480A JPS5771894A JP S5771894 A JPS5771894 A JP S5771894A JP 55144664 A JP55144664 A JP 55144664A JP 14466480 A JP14466480 A JP 14466480A JP S5771894 A JPS5771894 A JP S5771894A
Authority
JP
Japan
Prior art keywords
silicon
single crystal
melt
crucible
wall face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55144664A
Other languages
English (en)
Inventor
Yoshisato Hosoki
Kiyoshi Hisatomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55144664A priority Critical patent/JPS5771894A/ja
Publication of JPS5771894A publication Critical patent/JPS5771894A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP55144664A 1980-10-16 1980-10-16 Preparation of single crystal of semiconductor Pending JPS5771894A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55144664A JPS5771894A (en) 1980-10-16 1980-10-16 Preparation of single crystal of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55144664A JPS5771894A (en) 1980-10-16 1980-10-16 Preparation of single crystal of semiconductor

Publications (1)

Publication Number Publication Date
JPS5771894A true JPS5771894A (en) 1982-05-04

Family

ID=15367349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55144664A Pending JPS5771894A (en) 1980-10-16 1980-10-16 Preparation of single crystal of semiconductor

Country Status (1)

Country Link
JP (1) JPS5771894A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935094A (ja) * 1982-08-20 1984-02-25 Toshiba Ceramics Co Ltd シリコン単結晶の製造方法およびその装置
KR20230175318A (ko) * 2021-09-30 2023-12-29 시안 이에스윈 머티리얼즈 테크놀로지 컴퍼니 리미티드 석영 도가니 및 결정 인상로

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935094A (ja) * 1982-08-20 1984-02-25 Toshiba Ceramics Co Ltd シリコン単結晶の製造方法およびその装置
KR20230175318A (ko) * 2021-09-30 2023-12-29 시안 이에스윈 머티리얼즈 테크놀로지 컴퍼니 리미티드 석영 도가니 및 결정 인상로
JP2024520845A (ja) * 2021-09-30 2024-05-24 西安奕斯偉材料科技股▲ふん▼有限公司 石英坩堝及び結晶引上げ炉
US12227871B2 (en) 2021-09-30 2025-02-18 Xi'an ESWIN Material Technology Co., Ltd. Quartz crucible and crystal puller

Similar Documents

Publication Publication Date Title
JPS5669298A (en) Method of growing single crystal of semiconductor
JPS5738398A (en) Quartz glass crucible for pulling up silicon single crystal
JPS54157779A (en) Production of silicon single crystal
SU882247A1 (ru) Способ выращивания монокристаллического sic
JPS5547300A (en) Crystal pulling device
JPS5777098A (en) Method and apparatus for growing znse in liquid phase
JPS55100296A (en) Production of silicon single crystal
JPS5490086A (en) Method of producing single crystal
JPS5738397A (en) Apparatus and method for growing crystal
JPS54141389A (en) Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible
JPS56109896A (en) Semiconductor single crystal and its growing method
JPS5645890A (en) Crystal growing apparatus
JPS55113693A (en) Semiconductor single crystal producing device
JPS55167200A (en) Crystal growing method
JPS55130892A (en) Single crystal drawing up apparatus
JPS5742598A (en) Liquid-phase epitaxial growing method
JPS57196796A (en) Growing apparatus for beltlike silicon crystal
JPS55140800A (en) Crucible for crystal growing crucible device
JPS57129896A (en) Liquid phase epitaxial growing apparatus
JPS52120290A (en) Production of gap single crystal
JPS55121994A (en) Preparing semiconductor single crystal
JPS5364465A (en) Semiconductor crystal production apparatus
JPS5684397A (en) Single crystal growing method
JPS6461381A (en) Method for growing single crystal
JPS63215594A (ja) 二重るつぼ結晶育成方法