JPS5772321A - Manufacture of seiconductor device - Google Patents

Manufacture of seiconductor device

Info

Publication number
JPS5772321A
JPS5772321A JP55148939A JP14893980A JPS5772321A JP S5772321 A JPS5772321 A JP S5772321A JP 55148939 A JP55148939 A JP 55148939A JP 14893980 A JP14893980 A JP 14893980A JP S5772321 A JPS5772321 A JP S5772321A
Authority
JP
Japan
Prior art keywords
mask
substrate
insulation film
etching
insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55148939A
Other languages
English (en)
Inventor
Iwao Higashinakagaha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55148939A priority Critical patent/JPS5772321A/ja
Publication of JPS5772321A publication Critical patent/JPS5772321A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP55148939A 1980-10-24 1980-10-24 Manufacture of seiconductor device Pending JPS5772321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148939A JPS5772321A (en) 1980-10-24 1980-10-24 Manufacture of seiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148939A JPS5772321A (en) 1980-10-24 1980-10-24 Manufacture of seiconductor device

Publications (1)

Publication Number Publication Date
JPS5772321A true JPS5772321A (en) 1982-05-06

Family

ID=15464033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148939A Pending JPS5772321A (en) 1980-10-24 1980-10-24 Manufacture of seiconductor device

Country Status (1)

Country Link
JP (1) JPS5772321A (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966170A (ja) * 1982-10-08 1984-04-14 Toshiba Corp 半導体装置の製造方法
JPS59155128A (ja) * 1983-02-23 1984-09-04 Mitsubishi Electric Corp 半導体装置の製造方法
JPS59181614A (ja) * 1983-03-31 1984-10-16 Toshiba Corp 半導体装置の製造方法
JPS605514A (ja) * 1983-06-24 1985-01-12 Toshiba Corp 半導体装置の製造方法
JPS6028272A (ja) * 1983-07-27 1985-02-13 Toshiba Corp 半導体装置
JPS62500134A (ja) * 1984-08-30 1987-01-16 アメリカン テレフオン アンド テレグラフ カムパニ− 半導体デバイス内の電気コンタクト
US4707457A (en) * 1986-04-03 1987-11-17 Advanced Micro Devices, Inc. Method for making improved contact for integrated circuit structure
JPH033324A (ja) * 1989-05-13 1991-01-09 Hyundai Electron Ind Co Ltd 半導体接続装置の製造方法
US5663097A (en) * 1991-06-21 1997-09-02 Canon Kabushiki Kaisha Method of fabricating a semiconductor device having an insulating side wall

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966170A (ja) * 1982-10-08 1984-04-14 Toshiba Corp 半導体装置の製造方法
JPS59155128A (ja) * 1983-02-23 1984-09-04 Mitsubishi Electric Corp 半導体装置の製造方法
JPS59181614A (ja) * 1983-03-31 1984-10-16 Toshiba Corp 半導体装置の製造方法
JPS605514A (ja) * 1983-06-24 1985-01-12 Toshiba Corp 半導体装置の製造方法
JPS6028272A (ja) * 1983-07-27 1985-02-13 Toshiba Corp 半導体装置
JPS62500134A (ja) * 1984-08-30 1987-01-16 アメリカン テレフオン アンド テレグラフ カムパニ− 半導体デバイス内の電気コンタクト
US4641420A (en) * 1984-08-30 1987-02-10 At&T Bell Laboratories Metalization process for headless contact using deposited smoothing material
US4707457A (en) * 1986-04-03 1987-11-17 Advanced Micro Devices, Inc. Method for making improved contact for integrated circuit structure
JPH033324A (ja) * 1989-05-13 1991-01-09 Hyundai Electron Ind Co Ltd 半導体接続装置の製造方法
US5663097A (en) * 1991-06-21 1997-09-02 Canon Kabushiki Kaisha Method of fabricating a semiconductor device having an insulating side wall

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