JPS5773930A - Forming method for polycrystalline silicon film with addition of impurities for diffusion source - Google Patents

Forming method for polycrystalline silicon film with addition of impurities for diffusion source

Info

Publication number
JPS5773930A
JPS5773930A JP55149363A JP14936380A JPS5773930A JP S5773930 A JPS5773930 A JP S5773930A JP 55149363 A JP55149363 A JP 55149363A JP 14936380 A JP14936380 A JP 14936380A JP S5773930 A JPS5773930 A JP S5773930A
Authority
JP
Japan
Prior art keywords
impurities
addition
forming method
polycrystalline silicon
silicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55149363A
Other languages
Japanese (ja)
Inventor
Sadatake Kikuchi
Yoshiro Morikawa
Junichi Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55149363A priority Critical patent/JPS5773930A/en
Publication of JPS5773930A publication Critical patent/JPS5773930A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase

Landscapes

  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain doped polymeric Si for diffusion with excellent repeatability by injecting SiH4 and PH3 in a thermally-controlled ambience by using Ar as a carrier. CONSTITUTION:An opening is made is SiO2 on an Si substrate, and SiH4 and PH3 are injected in a furnace with Ar used as a carrier and at a temperature controlled to be 900 deg.C, whereby PSG is piled in the opening part. Since an Si3N4 film or the like which prevents diffusion of P is not formed between the substrate and the PSG by this constitution, the diffusion of impurities can be performed excellently.
JP55149363A 1980-10-27 1980-10-27 Forming method for polycrystalline silicon film with addition of impurities for diffusion source Pending JPS5773930A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55149363A JPS5773930A (en) 1980-10-27 1980-10-27 Forming method for polycrystalline silicon film with addition of impurities for diffusion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55149363A JPS5773930A (en) 1980-10-27 1980-10-27 Forming method for polycrystalline silicon film with addition of impurities for diffusion source

Publications (1)

Publication Number Publication Date
JPS5773930A true JPS5773930A (en) 1982-05-08

Family

ID=15473494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55149363A Pending JPS5773930A (en) 1980-10-27 1980-10-27 Forming method for polycrystalline silicon film with addition of impurities for diffusion source

Country Status (1)

Country Link
JP (1) JPS5773930A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4887772A (en) * 1972-02-18 1973-11-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4887772A (en) * 1972-02-18 1973-11-17

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