JPS5778140A - Forming method for photoresist film - Google Patents

Forming method for photoresist film

Info

Publication number
JPS5778140A
JPS5778140A JP55154441A JP15444180A JPS5778140A JP S5778140 A JPS5778140 A JP S5778140A JP 55154441 A JP55154441 A JP 55154441A JP 15444180 A JP15444180 A JP 15444180A JP S5778140 A JPS5778140 A JP S5778140A
Authority
JP
Japan
Prior art keywords
thickness
reflectivity
minimizing
resist
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55154441A
Other languages
Japanese (ja)
Inventor
Asao Yomo
Ryoichi Yoneyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Hoya Electronics Corp
Original Assignee
Hoya Corp
Hoya Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp, Hoya Electronics Corp filed Critical Hoya Corp
Priority to JP55154441A priority Critical patent/JPS5778140A/en
Publication of JPS5778140A publication Critical patent/JPS5778140A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To improve the exposure sensitivity of a photoresist film and to minimize the machining irregularity of the line width of an extremely fine size by setting the thickness of the film to a mask blank to the thickness of minimizing the spectral reflectivity in the exposure wavelength. CONSTITUTION:A spectral reflectivity is measured in an actual exposure wavelenth in a range of coated film thickness indexed by the pinhole of the resist and the resolution to set the thickness of minimizing the reflectivity of a film. For example, a positive quinone diazide series resist is coated on a Cr mask plate of, for example, 50% of reflectivity by varying the thickness in the above range, is exposed and developed with coherent light of 436nm in wavelength and is measured in its relfectivity to conform to minimize the thickness dependability of the line width with the thickness of minimizing the reflectivity. When the thickness of the resist is set to that of minimizing the reflectivity, the exposure efficiency can be increased to improve the apparent resist sensitivity, and the irregularity of matching line width can be reduced even if there is slight irregularity in the thickness.
JP55154441A 1980-10-31 1980-10-31 Forming method for photoresist film Pending JPS5778140A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55154441A JPS5778140A (en) 1980-10-31 1980-10-31 Forming method for photoresist film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55154441A JPS5778140A (en) 1980-10-31 1980-10-31 Forming method for photoresist film

Publications (1)

Publication Number Publication Date
JPS5778140A true JPS5778140A (en) 1982-05-15

Family

ID=15584260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55154441A Pending JPS5778140A (en) 1980-10-31 1980-10-31 Forming method for photoresist film

Country Status (1)

Country Link
JP (1) JPS5778140A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115072U (en) * 1984-06-29 1986-01-28 ホ−ヤ株式会社 Resist coating equipment
JPS63237417A (en) * 1987-03-25 1988-10-03 Nec Yamagata Ltd Manufacture of semiconductor device
EP0205148A3 (en) * 1985-06-12 1988-12-28 Hitachi, Ltd. Method of applying a resist

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115072U (en) * 1984-06-29 1986-01-28 ホ−ヤ株式会社 Resist coating equipment
EP0205148A3 (en) * 1985-06-12 1988-12-28 Hitachi, Ltd. Method of applying a resist
JPS63237417A (en) * 1987-03-25 1988-10-03 Nec Yamagata Ltd Manufacture of semiconductor device

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