JPS5778178A - Input protective circuit - Google Patents

Input protective circuit

Info

Publication number
JPS5778178A
JPS5778178A JP55154823A JP15482380A JPS5778178A JP S5778178 A JPS5778178 A JP S5778178A JP 55154823 A JP55154823 A JP 55154823A JP 15482380 A JP15482380 A JP 15482380A JP S5778178 A JPS5778178 A JP S5778178A
Authority
JP
Japan
Prior art keywords
resistor
input
electrode
protective
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55154823A
Other languages
Japanese (ja)
Inventor
Kaoru Shibuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55154823A priority Critical patent/JPS5778178A/en
Publication of JPS5778178A publication Critical patent/JPS5778178A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To avoid local heating in an input protecting circuit formed of an input protective resistor and an input protective diode by forming a folding shape of continuously acute curves in a flat shape of the resistor and forming continuously acute curve similarly in shape to the contacting holes between the resistor and the wire. CONSTITUTION:A protective resistor 2 is provided between an input terminal 1 and a gate electrode 4 to connect an input protecting circuit to an MOSIC element 3, and a protective diode 5 grounded at the anode side is connected between the resistor 2 and the electrode 4. As shown in this structure, when an input electrode 31 is connected to an input protective resistor 33 made of polycrystalline Si film via an aluminum wire 32, all the bent part 33a of the resitor 33 is formed in tapered shape, and contacting holes 34 for connecting the ends of the wires 32 to the resistor 33 is formed not at right angle but at acute angle at four corners. In this manner, even if excessive voltage is applied to the electrode 31, current flow becomes smooth.
JP55154823A 1980-11-04 1980-11-04 Input protective circuit Pending JPS5778178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55154823A JPS5778178A (en) 1980-11-04 1980-11-04 Input protective circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55154823A JPS5778178A (en) 1980-11-04 1980-11-04 Input protective circuit

Publications (1)

Publication Number Publication Date
JPS5778178A true JPS5778178A (en) 1982-05-15

Family

ID=15592650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55154823A Pending JPS5778178A (en) 1980-11-04 1980-11-04 Input protective circuit

Country Status (1)

Country Link
JP (1) JPS5778178A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251599A (en) * 1984-05-28 1985-12-12 Seiko Epson Corp Erasable non-volatile memory circuit
JPS6269522A (en) * 1985-09-20 1987-03-30 Mitsubishi Electric Corp Semiconductor device
US4763184A (en) * 1985-04-30 1988-08-09 Waferscale Integration, Inc. Input circuit for protecting against damage caused by electrostatic discharge
USRE34974E (en) * 1984-05-28 1995-06-20 Seiko Epson Corporation Non-volatile memory circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52102689A (en) * 1976-02-24 1977-08-29 Philips Nv Semiconductor device having safety circuit
JPS545568A (en) * 1977-06-15 1979-01-17 Mitsubishi Electric Corp Hybrid integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52102689A (en) * 1976-02-24 1977-08-29 Philips Nv Semiconductor device having safety circuit
JPS545568A (en) * 1977-06-15 1979-01-17 Mitsubishi Electric Corp Hybrid integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251599A (en) * 1984-05-28 1985-12-12 Seiko Epson Corp Erasable non-volatile memory circuit
USRE34974E (en) * 1984-05-28 1995-06-20 Seiko Epson Corporation Non-volatile memory circuit
US4763184A (en) * 1985-04-30 1988-08-09 Waferscale Integration, Inc. Input circuit for protecting against damage caused by electrostatic discharge
JPS6269522A (en) * 1985-09-20 1987-03-30 Mitsubishi Electric Corp Semiconductor device

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