JPS577896A - Manufacture of single crystal - Google Patents

Manufacture of single crystal

Info

Publication number
JPS577896A
JPS577896A JP8086280A JP8086280A JPS577896A JP S577896 A JPS577896 A JP S577896A JP 8086280 A JP8086280 A JP 8086280A JP 8086280 A JP8086280 A JP 8086280A JP S577896 A JPS577896 A JP S577896A
Authority
JP
Japan
Prior art keywords
melt
pressure
single crystal
capsuling
pressurizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8086280A
Other languages
Japanese (ja)
Inventor
Yoshihiro Kokubu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8086280A priority Critical patent/JPS577896A/en
Publication of JPS577896A publication Critical patent/JPS577896A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To obtain a stable single crystal in a high yield by pressurizing a melt of a compound semiconductor to a prescribed pressure or above with an inert gas and adjusting the water content of a capsuling agent to a prescribed value or below when a single crystal is manufactured by a liq. capsuling method.
CONSTITUTION: A crusible 12 is set in a high pressure vessel 11 and filled with a melt 13 of GaP, InP or GaAs as starting material having elements of a component with high decomposition pressure. The melt 13 is covered with an inert melt 14 having ≤300ppm water content. While pressurizing the melt 13 to a pressure ≥10atm above the decomposition pressure with an inert gas, a seed crystal 16 is brought into contact with the melt 13 and pulled up.
COPYRIGHT: (C)1982,JPO&Japio
JP8086280A 1980-06-17 1980-06-17 Manufacture of single crystal Pending JPS577896A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8086280A JPS577896A (en) 1980-06-17 1980-06-17 Manufacture of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8086280A JPS577896A (en) 1980-06-17 1980-06-17 Manufacture of single crystal

Publications (1)

Publication Number Publication Date
JPS577896A true JPS577896A (en) 1982-01-16

Family

ID=13730142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8086280A Pending JPS577896A (en) 1980-06-17 1980-06-17 Manufacture of single crystal

Country Status (1)

Country Link
JP (1) JPS577896A (en)

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