JPS5793544A - Manufacture of compound semiconductor device - Google Patents

Manufacture of compound semiconductor device

Info

Publication number
JPS5793544A
JPS5793544A JP17007580A JP17007580A JPS5793544A JP S5793544 A JPS5793544 A JP S5793544A JP 17007580 A JP17007580 A JP 17007580A JP 17007580 A JP17007580 A JP 17007580A JP S5793544 A JPS5793544 A JP S5793544A
Authority
JP
Japan
Prior art keywords
electrode
layer
type
gap
pellets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17007580A
Other languages
Japanese (ja)
Inventor
Tetsuro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17007580A priority Critical patent/JPS5793544A/en
Publication of JPS5793544A publication Critical patent/JPS5793544A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices

Landscapes

  • Weting (AREA)
  • Dicing (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To etch the side face of a pellet without isolation of an electrode by dividing a GaP crystal having p-n junction into pellets with p type side electrode material of the crystal with aluminum and then treating it with acid containing hydrogen peroxide and sulfuric acid. CONSTITUTION:A Te-doped n tye GaP epitaxial layer 4 and a Zn, O-doped p type GaP epitaxial layer 3 are grown in liquid phase on an n type GaP substate 5 to form red light emitting diode epitaxial wafers. Then, Zn is diffused from the surface of the layer 3 by a sealing tube diffusion method to form a p<+> type layer 2 of 2mum thick, and subsequently an aluminum electrode 1 is formed on the surface, and an AuSi electrode 6 is covered on the back surface. To divide the substrate 5 into pellets, it is diced, is then treated in an etchant containing a mixture of sulfuric acid:hydrogen peroxide:water=1:1:1 at 60 deg.C, and a strain layer 7 produced at the side face of the pellet is effectively removed by dicing. The electrode 1 is not corroded with this etchant.
JP17007580A 1980-12-02 1980-12-02 Manufacture of compound semiconductor device Pending JPS5793544A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17007580A JPS5793544A (en) 1980-12-02 1980-12-02 Manufacture of compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17007580A JPS5793544A (en) 1980-12-02 1980-12-02 Manufacture of compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS5793544A true JPS5793544A (en) 1982-06-10

Family

ID=15898169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17007580A Pending JPS5793544A (en) 1980-12-02 1980-12-02 Manufacture of compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5793544A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63266851A (en) * 1987-04-24 1988-11-02 Mitsubishi Monsanto Chem Co Semiconductor element separation method
WO2007015354A1 (en) * 2005-08-01 2007-02-08 Sharp Kabushiki Kaisha Method for manufacturing photoelectric converter and photoelectric converter

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140785A (en) * 1974-10-04 1976-04-05 Ise Electronics Corp
JPS54100278A (en) * 1978-01-24 1979-08-07 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140785A (en) * 1974-10-04 1976-04-05 Ise Electronics Corp
JPS54100278A (en) * 1978-01-24 1979-08-07 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63266851A (en) * 1987-04-24 1988-11-02 Mitsubishi Monsanto Chem Co Semiconductor element separation method
WO2007015354A1 (en) * 2005-08-01 2007-02-08 Sharp Kabushiki Kaisha Method for manufacturing photoelectric converter and photoelectric converter
JP2007042739A (en) * 2005-08-01 2007-02-15 Sharp Corp Method for manufacturing photoelectric conversion element and photoelectric conversion element

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