JPS58169959A - 電気的にプログラミング及び消去できるｍｏｓメモリ装置 - Google Patents

電気的にプログラミング及び消去できるｍｏｓメモリ装置

Info

Publication number
JPS58169959A
JPS58169959A JP58012573A JP1257383A JPS58169959A JP S58169959 A JPS58169959 A JP S58169959A JP 58012573 A JP58012573 A JP 58012573A JP 1257383 A JP1257383 A JP 1257383A JP S58169959 A JPS58169959 A JP S58169959A
Authority
JP
Japan
Prior art keywords
region
diffusion region
substrate
diffusion
conductive strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58012573A
Other languages
English (en)
Japanese (ja)
Inventor
ジヨ−ジ・パ−レゴス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHIIKU TEKUNOROJII Inc
Original Assignee
SHIIKU TEKUNOROJII Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHIIKU TEKUNOROJII Inc filed Critical SHIIKU TEKUNOROJII Inc
Publication of JPS58169959A publication Critical patent/JPS58169959A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP58012573A 1982-01-29 1983-01-28 電気的にプログラミング及び消去できるｍｏｓメモリ装置 Pending JPS58169959A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/343,847 US4558344A (en) 1982-01-29 1982-01-29 Electrically-programmable and electrically-erasable MOS memory device
US343847 1982-01-29

Publications (1)

Publication Number Publication Date
JPS58169959A true JPS58169959A (ja) 1983-10-06

Family

ID=23347938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58012573A Pending JPS58169959A (ja) 1982-01-29 1983-01-28 電気的にプログラミング及び消去できるｍｏｓメモリ装置

Country Status (5)

Country Link
US (1) US4558344A (de)
EP (1) EP0085550B1 (de)
JP (1) JPS58169959A (de)
AT (1) ATE52148T1 (de)
DE (1) DE3381484D1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163918A (ja) * 1984-01-06 1994-06-10 Advanced Micro Devices Inc Ｅ２ｐｒｏｍメモリセル

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58130571A (ja) * 1982-01-29 1983-08-04 Hitachi Ltd 半導体装置
EP0133667A3 (en) * 1983-08-12 1987-08-26 American Microsystems, Incorporated High coupling ratio dense electrically erasable programmable read-only memory
US4768169A (en) * 1983-10-28 1988-08-30 Seeq Technology, Inc. Fault-tolerant memory array
JPH0673375B2 (ja) * 1984-03-19 1994-09-14 富士通株式会社 半導体装置の製造方法
US4787047A (en) * 1985-03-22 1988-11-22 Intersil Electrically erasable fused programmable logic array
US4939558A (en) * 1985-09-27 1990-07-03 Texas Instruments Incorporated EEPROM memory cell and driving circuitry
US4742492A (en) * 1985-09-27 1988-05-03 Texas Instruments Incorporated EEPROM memory cell having improved breakdown characteristics and driving circuitry therefor
JPH0777078B2 (ja) * 1987-01-31 1995-08-16 株式会社東芝 不揮発性半導体メモリ
JPH0772996B2 (ja) * 1987-01-31 1995-08-02 株式会社東芝 不揮発性半導体メモリ
KR920001402B1 (ko) * 1988-11-29 1992-02-13 삼성전자 주식회사 불휘발성 반도체 기억소자
US5081054A (en) * 1989-04-03 1992-01-14 Atmel Corporation Fabrication process for programmable and erasable MOS memory device
US5177705A (en) * 1989-09-05 1993-01-05 Texas Instruments Incorporated Programming of an electrically-erasable, electrically-programmable, read-only memory array
US5036378A (en) * 1989-11-01 1991-07-30 At&T Bell Laboratories Memory device
US5455792A (en) * 1994-09-09 1995-10-03 Yi; Yong-Wan Flash EEPROM devices employing mid channel injection
US5640344A (en) * 1995-07-25 1997-06-17 Btr, Inc. Programmable non-volatile bidirectional switch for programmable logic
KR100192430B1 (ko) * 1995-08-21 1999-06-15 구본준 비휘발성 메모리 및 이 비휘발성 메모리를 프로그램하는 방법
EP0778581B1 (de) * 1995-12-07 2002-08-14 Samsung Electronics Co., Ltd. Nichtflüchtige Speicheranordnung
DE69705837T2 (de) * 1996-06-14 2001-11-08 Infineon Technologies Ag Anordnung und verfahren zum speichern und lesen von mehrpegelladung
US6201732B1 (en) 1997-01-02 2001-03-13 John M. Caywood Low voltage single CMOS electrically erasable read-only memory
US5986931A (en) 1997-01-02 1999-11-16 Caywood; John M. Low voltage single CMOS electrically erasable read-only memory
US5790455A (en) * 1997-01-02 1998-08-04 John Caywood Low voltage single supply CMOS electrically erasable read-only memory
KR100437470B1 (ko) 2001-01-31 2004-06-23 삼성전자주식회사 플래쉬 메모리 셀을 갖는 반도체 장치 및 그 제조 방법
FR2844090A1 (fr) 2002-08-27 2004-03-05 St Microelectronics Sa Cellule memoire pour registre non volatile a lecture rapide
US7095075B2 (en) 2003-07-01 2006-08-22 Micron Technology, Inc. Apparatus and method for split transistor memory having improved endurance
US7148538B2 (en) * 2003-12-17 2006-12-12 Micron Technology, Inc. Vertical NAND flash memory array
US7241654B2 (en) 2003-12-17 2007-07-10 Micron Technology, Inc. Vertical NROM NAND flash memory array
US6878991B1 (en) 2004-01-30 2005-04-12 Micron Technology, Inc. Vertical device 4F2 EEPROM memory
US7075146B2 (en) 2004-02-24 2006-07-11 Micron Technology, Inc. 4F2 EEPROM NROM memory arrays with vertical devices
US7366025B2 (en) * 2004-06-10 2008-04-29 Saifun Semiconductors Ltd. Reduced power programming of non-volatile cells

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51117838A (en) * 1975-04-10 1976-10-16 Shindengen Electric Mfg Co Ltd Semiconductor memory device
JPS5792488A (en) * 1980-11-26 1982-06-09 Fujitsu Ltd Nonvolatile memory

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers
CA813537A (en) * 1967-10-17 1969-05-20 Radio Corporation Of America Semiconductor memory device
US3719866A (en) * 1970-12-03 1973-03-06 Ncr Semiconductor memory device
US3868187A (en) * 1972-08-31 1975-02-25 Tokyo Shibaura Electric Co Avalanche injection type mos memory
US3919711A (en) * 1973-02-26 1975-11-11 Intel Corp Erasable floating gate device
US4004159A (en) * 1973-05-18 1977-01-18 Sanyo Electric Co., Ltd. Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation
JPS571149B2 (de) * 1974-08-28 1982-01-09
US4016588A (en) * 1974-12-27 1977-04-05 Nippon Electric Company, Ltd. Non-volatile semiconductor memory device
NL7500550A (nl) * 1975-01-17 1976-07-20 Philips Nv Halfgeleider-geheugeninrichting.
US3992701A (en) * 1975-04-10 1976-11-16 International Business Machines Corporation Non-volatile memory cell and array using substrate current
JPS587923B2 (ja) * 1975-09-06 1983-02-14 イシカワ ジロウ ハグルマケンサホウホウトソウチ
US4047974A (en) * 1975-12-30 1977-09-13 Hughes Aircraft Company Process for fabricating non-volatile field effect semiconductor memory structure utilizing implanted ions to induce trapping states
US4115914A (en) * 1976-03-26 1978-09-26 Hughes Aircraft Company Electrically erasable non-volatile semiconductor memory
US4203158A (en) * 1978-02-24 1980-05-13 Intel Corporation Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same
JPS5929155B2 (ja) * 1979-11-12 1984-07-18 富士通株式会社 半導体記憶装置
EP0053075B1 (de) * 1980-11-26 1988-04-20 Fujitsu Limited Nichtflüchtiger Speicher
US4402904A (en) * 1980-12-18 1983-09-06 Combustion Engineering, Inc. Method for determining clad integrity of a nuclear fuel rod

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51117838A (en) * 1975-04-10 1976-10-16 Shindengen Electric Mfg Co Ltd Semiconductor memory device
JPS5792488A (en) * 1980-11-26 1982-06-09 Fujitsu Ltd Nonvolatile memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163918A (ja) * 1984-01-06 1994-06-10 Advanced Micro Devices Inc Ｅ２ｐｒｏｍメモリセル

Also Published As

Publication number Publication date
US4558344A (en) 1985-12-10
DE3381484D1 (de) 1990-05-23
ATE52148T1 (de) 1990-05-15
EP0085550B1 (de) 1990-04-18
EP0085550A3 (en) 1986-02-12
EP0085550A2 (de) 1983-08-10

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