JPS5826014A - シリコン窒化膜の形成方法 - Google Patents

シリコン窒化膜の形成方法

Info

Publication number: JPS5826014A
Authority: JP; Japan
Prior art keywords: silicon nitride; nitride film; gaseous; film; temp
Prior art date: 1981-07-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP11919481A

Other languages

English (en)

Japanese (ja)

Other versions

JPS6310893B2 (it

Inventor

Kenji Ikeda

健志池田

Kazuhisa Takahashi

和久高橋

Jun Osawa

大沢　潤

Wataru Suzaki

須崎　渉

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

National Institute of Advanced Industrial Science and Technology AIST

Original Assignee

Agency of Industrial Science and Technology

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-07-31

Filing date

1981-07-31

Publication date

1983-02-16

1981-07-31 Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology

1981-07-31 Priority to JP11919481A priority Critical patent/JPS5826014A/ja

1983-02-16 Publication of JPS5826014A publication Critical patent/JPS5826014A/ja

1988-03-10 Publication of JPS6310893B2 publication Critical patent/JPS6310893B2/ja

Status Granted legal-status Critical Current

Links

229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 26
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 26
230000015572 biosynthetic process Effects 0.000 title abstract description 6
238000000034 method Methods 0.000 claims description 8
229910021478 group 5 element Inorganic materials 0.000 claims description 4
239000007789 gas Substances 0.000 abstract description 20
239000013078 crystal Substances 0.000 abstract description 12
238000009792 diffusion process Methods 0.000 abstract description 12
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 2
239000012159 carrier gas Substances 0.000 abstract description 2
238000006243 chemical reaction Methods 0.000 abstract description 2
238000005530 etching Methods 0.000 abstract description 2
239000010453 quartz Substances 0.000 abstract description 2
239000012528 membrane Substances 0.000 description 6
239000004065 semiconductor Substances 0.000 description 6
150000001875 compounds Chemical class 0.000 description 5
238000004519 manufacturing process Methods 0.000 description 3
XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
238000000354 decomposition reaction Methods 0.000 description 2
239000000463 material Substances 0.000 description 2
229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
230000035508 accumulation Effects 0.000 description 1
238000009825 accumulation Methods 0.000 description 1
229910052793 cadmium Inorganic materials 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
238000011161 development Methods 0.000 description 1
230000018109 developmental process Effects 0.000 description 1
239000010419 fine particle Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
239000012535 impurity Substances 0.000 description 1
230000035699 permeability Effects 0.000 description 1
229910000073 phosphorus hydride Inorganic materials 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
229910052725 zinc Inorganic materials 0.000 description 1

Landscapes

Chemical Vapour Deposition (AREA)
Formation Of Insulating Films (AREA)

JP11919481A 1981-07-31 1981-07-31 シリコン窒化膜の形成方法 Granted JPS5826014A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP11919481A JPS5826014A (ja)	1981-07-31	1981-07-31	シリコン窒化膜の形成方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP11919481A JPS5826014A (ja)	1981-07-31	1981-07-31	シリコン窒化膜の形成方法

Publications (2)

Publication Number	Publication Date
JPS5826014A true JPS5826014A (ja)	1983-02-16
JPS6310893B2 JPS6310893B2 (it)	1988-03-10

Family

ID=14755243

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP11919481A Granted JPS5826014A (ja)	1981-07-31	1981-07-31	シリコン窒化膜の形成方法

Country Status (1)

Country	Link
JP (1)	JPS5826014A (it)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5421171A (en) *	1977-07-18	1979-02-17	Matsushita Electric Ind Co Ltd	Manufacture for compound semiconductor device
JPS5664442A (en) *	1979-10-30	1981-06-01	Mitsubishi Electric Corp	Manufacture of semiconductor device

1981
- 1981-07-31 JP JP11919481A patent/JPS5826014A/ja active Granted

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5421171A (en) *	1977-07-18	1979-02-17	Matsushita Electric Ind Co Ltd	Manufacture for compound semiconductor device
JPS5664442A (en) *	1979-10-30	1981-06-01	Mitsubishi Electric Corp	Manufacture of semiconductor device

Also Published As

Publication number	Publication date
JPS6310893B2 (it)	1988-03-10

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