JPS6310893B2 - - Google Patents
Info
- Publication number
- JPS6310893B2 JPS6310893B2 JP56119194A JP11919481A JPS6310893B2 JP S6310893 B2 JPS6310893 B2 JP S6310893B2 JP 56119194 A JP56119194 A JP 56119194A JP 11919481 A JP11919481 A JP 11919481A JP S6310893 B2 JPS6310893 B2 JP S6310893B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon nitride
- film
- nitride film
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11919481A JPS5826014A (ja) | 1981-07-31 | 1981-07-31 | シリコン窒化膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11919481A JPS5826014A (ja) | 1981-07-31 | 1981-07-31 | シリコン窒化膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5826014A JPS5826014A (ja) | 1983-02-16 |
| JPS6310893B2 true JPS6310893B2 (it) | 1988-03-10 |
Family
ID=14755243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11919481A Granted JPS5826014A (ja) | 1981-07-31 | 1981-07-31 | シリコン窒化膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5826014A (it) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5421171A (en) * | 1977-07-18 | 1979-02-17 | Matsushita Electric Ind Co Ltd | Manufacture for compound semiconductor device |
| JPS5664442A (en) * | 1979-10-30 | 1981-06-01 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1981
- 1981-07-31 JP JP11919481A patent/JPS5826014A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5826014A (ja) | 1983-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5413679A (en) | Method of producing a silicon membrane using a silicon alloy etch stop layer | |
| JP3330218B2 (ja) | 半導体装置の製造方法,及び半導体装置 | |
| KR920003291B1 (ko) | 반도체 장치 제조방법 | |
| JPH01270593A (ja) | 化合物半導体層形成方法 | |
| US3856588A (en) | Stabilizing insulation for diffused group iii-v devices | |
| JP3602443B2 (ja) | 半導体素子の製法 | |
| JPS6310893B2 (it) | ||
| JPS596057B2 (ja) | 半導体基板の処理方法 | |
| JPH08241863A (ja) | 半導体基板の製造方法 | |
| JPH0774109A (ja) | 化合物半導体基板および半導体基板の再利用法 | |
| JP2735190B2 (ja) | 分子線エピタキシヤル成長方法及び成長装置 | |
| JPH09266175A (ja) | 半導体ウェーハの製造方法及び半導体ウェーハ | |
| JP3324221B2 (ja) | Iii −v族化合物半導体デバイスの製造方法 | |
| JPH05291134A (ja) | エピタキシャル層の形成方法 | |
| JP2617486B2 (ja) | ▲iii▼−v化合物半導体の熱処理方法 | |
| JPH0355438B2 (it) | ||
| JPH04199507A (ja) | 3―V族化合物半導体へのn型不純物固相拡散方法 | |
| JPS63255914A (ja) | 半導体集積回路の製造方法 | |
| JPS625330B2 (it) | ||
| JPH06305900A (ja) | 化合物半導体の熱処理方法 | |
| JPH01293665A (ja) | Mos型トランジスタにおけるゲート酸化膜の形成方法 | |
| JPS5976486A (ja) | 発光ダイオ−ドの製造方法 | |
| KR930006734B1 (ko) | 씨모스소자의 산화막 성장방법 | |
| JP3213551B2 (ja) | Iii−v族化合物半導体の気相成長方法及びその装置 | |
| JPH06140411A (ja) | 半導体装置用シリコン基板 |