JPS5837920A - 液相成長装置 - Google Patents

液相成長装置

Info

Publication number
JPS5837920A
JPS5837920A JP13646981A JP13646981A JPS5837920A JP S5837920 A JPS5837920 A JP S5837920A JP 13646981 A JP13646981 A JP 13646981A JP 13646981 A JP13646981 A JP 13646981A JP S5837920 A JPS5837920 A JP S5837920A
Authority
JP
Japan
Prior art keywords
melt
holding device
growth
liquid phase
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13646981A
Other languages
English (en)
Japanese (ja)
Other versions
JPS626337B2 (it
Inventor
Takao Oda
織田 隆雄
Susumu Yoshida
進 吉田
Kotaro Mitsui
三井 興太郎
Masahiro Yoshida
昌弘 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13646981A priority Critical patent/JPS5837920A/ja
Publication of JPS5837920A publication Critical patent/JPS5837920A/ja
Publication of JPS626337B2 publication Critical patent/JPS626337B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/06Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP13646981A 1981-08-28 1981-08-28 液相成長装置 Granted JPS5837920A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13646981A JPS5837920A (ja) 1981-08-28 1981-08-28 液相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13646981A JPS5837920A (ja) 1981-08-28 1981-08-28 液相成長装置

Publications (2)

Publication Number Publication Date
JPS5837920A true JPS5837920A (ja) 1983-03-05
JPS626337B2 JPS626337B2 (it) 1987-02-10

Family

ID=15175840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13646981A Granted JPS5837920A (ja) 1981-08-28 1981-08-28 液相成長装置

Country Status (1)

Country Link
JP (1) JPS5837920A (it)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920927A (en) * 1987-12-07 1990-05-01 Honda Giken Kogyo Kabushiki Kaisha Cooling structure for liquid-cooled engine
US4984539A (en) * 1989-05-15 1991-01-15 Honda Giken Kogyo Kabushiki Kaisha Liquid cooled internal combustion engine
US9874133B2 (en) 2012-06-26 2018-01-23 Avl List Gmbh Internal combustion engine, in particular large diesel engine

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920927A (en) * 1987-12-07 1990-05-01 Honda Giken Kogyo Kabushiki Kaisha Cooling structure for liquid-cooled engine
US4984539A (en) * 1989-05-15 1991-01-15 Honda Giken Kogyo Kabushiki Kaisha Liquid cooled internal combustion engine
US9874133B2 (en) 2012-06-26 2018-01-23 Avl List Gmbh Internal combustion engine, in particular large diesel engine

Also Published As

Publication number Publication date
JPS626337B2 (it) 1987-02-10

Similar Documents

Publication Publication Date Title
JPS626337B2 (it)
JPS626335B2 (it)
US4366771A (en) Mercury containment for liquid phase growth of mercury cadmium telluride from tellurium-rich solution
JPS58120600A (ja) 3―v族化合物半導体のエピタキシカル成長方法
JPS62130517A (ja) 液相エピタキシヤル成長装置
JPS61111523A (ja) 液相エピタキシヤル結晶成長装置
Shishido et al. New Pt Complex Oxides R2Ba2CuPtO8 (R= Er, Ho, Y), R2Ba3Cu2PtO10 (R= Er, Ho, Y) and Ba4CuPt2O9
JPS62144321A (ja) 液相エピタキシヤル成長装置
JPS60198720A (ja) 液相エピタキシヤル結晶成長装置
CN210357823U (zh) 含浸槽
JPH0243723A (ja) 溶液成長装置
JPH03227014A (ja) 液相エピタキシャル成長装置
JP2823760B2 (ja) 液相エピタキシャル成長装置
JPS538073A (en) Mis type semiconductor device
JPS63139093A (ja) 液相エピタキシヤル成長装置
JPS5919920B2 (ja) 液相エピタキシヤル成長装置
Limina et al. Surface Tension and the Structure of Copper--Lead Alloys
Mitra Solubility of Xenon in Liquid Metals
JPH06291068A (ja) 液相エピタキシャル成長方法
JPS5289071A (en) Semiconductor device
JPS60123024A (ja) 液相エピタキシャル結晶成長方法および装置
JPS5957989A (ja) 液相エピタキシヤル成長方法
JPS6230692A (ja) 液相エピタキシヤル成長装置
IE35057B1 (en) Methods of growing multilayer semiconductor crystals
LYSAK et al. Equipment for low-temperature X-ray studies of single crystals/a review