JPS59110154A - 半導体メモリセル - Google Patents

半導体メモリセル

Info

Publication number
JPS59110154A
JPS59110154A JP57220581A JP22058182A JPS59110154A JP S59110154 A JPS59110154 A JP S59110154A JP 57220581 A JP57220581 A JP 57220581A JP 22058182 A JP22058182 A JP 22058182A JP S59110154 A JPS59110154 A JP S59110154A
Authority
JP
Japan
Prior art keywords
electrode
silicon
semiconductor
memory cell
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57220581A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0370381B2 (2
Inventor
Masaaki Yoshida
正昭 吉田
Toshiyuki Ishijima
石嶋　俊之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57220581A priority Critical patent/JPS59110154A/ja
Publication of JPS59110154A publication Critical patent/JPS59110154A/ja
Publication of JPH0370381B2 publication Critical patent/JPH0370381B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor

Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57220581A 1982-12-16 1982-12-16 半導体メモリセル Granted JPS59110154A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57220581A JPS59110154A (ja) 1982-12-16 1982-12-16 半導体メモリセル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57220581A JPS59110154A (ja) 1982-12-16 1982-12-16 半導体メモリセル

Publications (2)

Publication Number Publication Date
JPS59110154A true JPS59110154A (ja) 1984-06-26
JPH0370381B2 JPH0370381B2 (2) 1991-11-07

Family

ID=16753211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57220581A Granted JPS59110154A (ja) 1982-12-16 1982-12-16 半導体メモリセル

Country Status (1)

Country Link
JP (1) JPS59110154A (2)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129461A (ja) * 1983-01-13 1984-07-25 Fujitsu Ltd 半導体装置とその製造方法
JPS61170060A (ja) * 1985-01-23 1986-07-31 Mitsubishi Electric Corp 半導体メモリ
JPS61177742A (ja) * 1985-02-01 1986-08-09 Mitsubishi Electric Corp 半導体装置
JPS63124453A (ja) * 1986-11-13 1988-05-27 Mitsubishi Electric Corp 半導体記憶装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129461A (ja) * 1983-01-13 1984-07-25 Fujitsu Ltd 半導体装置とその製造方法
JPS61170060A (ja) * 1985-01-23 1986-07-31 Mitsubishi Electric Corp 半導体メモリ
JPS61177742A (ja) * 1985-02-01 1986-08-09 Mitsubishi Electric Corp 半導体装置
JPS63124453A (ja) * 1986-11-13 1988-05-27 Mitsubishi Electric Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPH0370381B2 (2) 1991-11-07

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