JPS5913322A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5913322A JPS5913322A JP57122027A JP12202782A JPS5913322A JP S5913322 A JPS5913322 A JP S5913322A JP 57122027 A JP57122027 A JP 57122027A JP 12202782 A JP12202782 A JP 12202782A JP S5913322 A JPS5913322 A JP S5913322A
- Authority
- JP
- Japan
- Prior art keywords
- region
- diffusing
- layer
- semiconductor substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
Landscapes
- Thyristors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57122027A JPS5913322A (ja) | 1982-07-15 | 1982-07-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57122027A JPS5913322A (ja) | 1982-07-15 | 1982-07-15 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5913322A true JPS5913322A (ja) | 1984-01-24 |
| JPS6354212B2 JPS6354212B2 (2) | 1988-10-27 |
Family
ID=14825774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57122027A Granted JPS5913322A (ja) | 1982-07-15 | 1982-07-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5913322A (2) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60145660A (ja) * | 1984-01-09 | 1985-08-01 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS6260259A (ja) * | 1985-09-05 | 1987-03-16 | オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト | 非対称サイリスタ及びその製法 |
-
1982
- 1982-07-15 JP JP57122027A patent/JPS5913322A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60145660A (ja) * | 1984-01-09 | 1985-08-01 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS6260259A (ja) * | 1985-09-05 | 1987-03-16 | オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト | 非対称サイリスタ及びその製法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6354212B2 (2) | 1988-10-27 |
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