JPS59194480A - 太陽電池の製造法 - Google Patents

太陽電池の製造法

Info

Publication number
JPS59194480A
JPS59194480A JP58068703A JP6870383A JPS59194480A JP S59194480 A JPS59194480 A JP S59194480A JP 58068703 A JP58068703 A JP 58068703A JP 6870383 A JP6870383 A JP 6870383A JP S59194480 A JPS59194480 A JP S59194480A
Authority
JP
Japan
Prior art keywords
mask
substrate
solar cell
manufacturing
amorphous film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58068703A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6320027B2 (de
Inventor
Akira Hanabusa
花房　彰
Mikihiro Azumaguchi
東口　実喜博
Michio Osawa
道雄 大沢
Zenichiro Ito
伊藤　善一郎
Koshiro Mori
森　幸四郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58068703A priority Critical patent/JPS59194480A/ja
Publication of JPS59194480A publication Critical patent/JPS59194480A/ja
Publication of JPS6320027B2 publication Critical patent/JPS6320027B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP58068703A 1983-04-18 1983-04-18 太陽電池の製造法 Granted JPS59194480A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58068703A JPS59194480A (ja) 1983-04-18 1983-04-18 太陽電池の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58068703A JPS59194480A (ja) 1983-04-18 1983-04-18 太陽電池の製造法

Publications (2)

Publication Number Publication Date
JPS59194480A true JPS59194480A (ja) 1984-11-05
JPS6320027B2 JPS6320027B2 (de) 1988-04-26

Family

ID=13381391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58068703A Granted JPS59194480A (ja) 1983-04-18 1983-04-18 太陽電池の製造法

Country Status (1)

Country Link
JP (1) JPS59194480A (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098552A (ja) * 1983-11-01 1985-06-01 Hitachi Ltd Ｖｔｒの可変速制御装置
JPS61116885A (ja) * 1984-11-12 1986-06-04 Semiconductor Energy Lab Co Ltd 光電変換半導体装置作製方法
JPH07202229A (ja) * 1994-07-07 1995-08-04 Semiconductor Energy Lab Co Ltd 選択的被膜形成方法
JPWO2004079442A1 (ja) * 2003-03-06 2006-06-08 株式会社ブリヂストン 画像表示装置の製造方法及び画像表示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5018974A (de) * 1973-06-22 1975-02-27
JPS5680176A (en) * 1979-12-04 1981-07-01 Sanyo Electric Co Ltd Photoelectromotive force device
JPS58111380A (ja) * 1981-12-24 1983-07-02 Seiko Epson Corp アモルフアスシリコン太陽電池の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5018974A (de) * 1973-06-22 1975-02-27
JPS5680176A (en) * 1979-12-04 1981-07-01 Sanyo Electric Co Ltd Photoelectromotive force device
JPS58111380A (ja) * 1981-12-24 1983-07-02 Seiko Epson Corp アモルフアスシリコン太陽電池の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098552A (ja) * 1983-11-01 1985-06-01 Hitachi Ltd Ｖｔｒの可変速制御装置
JPS61116885A (ja) * 1984-11-12 1986-06-04 Semiconductor Energy Lab Co Ltd 光電変換半導体装置作製方法
JPH07202229A (ja) * 1994-07-07 1995-08-04 Semiconductor Energy Lab Co Ltd 選択的被膜形成方法
JPWO2004079442A1 (ja) * 2003-03-06 2006-06-08 株式会社ブリヂストン 画像表示装置の製造方法及び画像表示装置

Also Published As

Publication number Publication date
JPS6320027B2 (de) 1988-04-26

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