JPS59224119A - 被膜作製方法 - Google Patents
被膜作製方法Info
- Publication number
- JPS59224119A JPS59224119A JP59005433A JP543384A JPS59224119A JP S59224119 A JPS59224119 A JP S59224119A JP 59005433 A JP59005433 A JP 59005433A JP 543384 A JP543384 A JP 543384A JP S59224119 A JPS59224119 A JP S59224119A
- Authority
- JP
- Japan
- Prior art keywords
- silane
- gas
- cylinder
- clusters
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
Landscapes
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59005433A JPS59224119A (ja) | 1984-01-16 | 1984-01-16 | 被膜作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59005433A JPS59224119A (ja) | 1984-01-16 | 1984-01-16 | 被膜作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55129641A Division JPS6024180B2 (ja) | 1980-09-18 | 1980-09-18 | 被膜作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59224119A true JPS59224119A (ja) | 1984-12-17 |
| JPS6323650B2 JPS6323650B2 (2) | 1988-05-17 |
Family
ID=11611058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59005433A Granted JPS59224119A (ja) | 1984-01-16 | 1984-01-16 | 被膜作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59224119A (2) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4892568A (en) * | 1988-02-19 | 1990-01-09 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for removing n-type impurities from liquid or gaseous substances produced in the gas-phase deposition of silicon |
| JPH02225674A (ja) * | 1988-04-15 | 1990-09-07 | Matsushita Electric Ind Co Ltd | 非単結晶薄膜の作製方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01295167A (ja) * | 1988-05-23 | 1989-11-28 | Jidosha Kiki Co Ltd | 車輪速度の異常検出装置 |
| JPH0280964A (ja) * | 1988-09-16 | 1990-03-22 | Nippon Denso Co Ltd | 車輪速信号処理装置 |
| JPH05133855A (ja) * | 1991-02-18 | 1993-05-28 | Osaka Oxygen Ind Ltd | ガスサンプリング装置 |
-
1984
- 1984-01-16 JP JP59005433A patent/JPS59224119A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4892568A (en) * | 1988-02-19 | 1990-01-09 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for removing n-type impurities from liquid or gaseous substances produced in the gas-phase deposition of silicon |
| JPH02225674A (ja) * | 1988-04-15 | 1990-09-07 | Matsushita Electric Ind Co Ltd | 非単結晶薄膜の作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6323650B2 (2) | 1988-05-17 |
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