JPS5936263U - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5936263U
JPS5936263U JP13092282U JP13092282U JPS5936263U JP S5936263 U JPS5936263 U JP S5936263U JP 13092282 U JP13092282 U JP 13092282U JP 13092282 U JP13092282 U JP 13092282U JP S5936263 U JPS5936263 U JP S5936263U
Authority
JP
Japan
Prior art keywords
semiconductor
semiconductor equipment
semiconductor device
semiconductor substrate
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13092282U
Other languages
English (en)
Inventor
健一 笠原
杉本　満則
野村　秀徳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP13092282U priority Critical patent/JPS5936263U/ja
Publication of JPS5936263U publication Critical patent/JPS5936263U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第１図は従来例、第２図は本考案に係わる一実施例の断
面図である。 １１は半絶縁性基板、１２は第１半導体層、１３は第２
半導体層、１４は第３半導体層、１５．　．１６．１７
．１８及び１９は電極、２Ｄは絶縁膜、２１は溝、２２
はフォトダイオード、２３はＦＥＴ、２４は凹部である
。

Claims (1)

    【実用新案登録請求の範囲】
  1. 所定の半導体基板の上に高さの異なる複数個の半導体素
    子が形成された半導体装置に於いて、前記半導体基板に
    予め前記半導体素子の高さに応じた深さの凹部を形成し
    ておきその凹部に対応する前記半導体素子を給酸してな
    ることを特徴とする半導体装置。
JP13092282U 1982-08-30 1982-08-30 半導体装置 Pending JPS5936263U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13092282U JPS5936263U (ja) 1982-08-30 1982-08-30 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13092282U JPS5936263U (ja) 1982-08-30 1982-08-30 半導体装置

Publications (1)

Publication Number Publication Date
JPS5936263U true JPS5936263U (ja) 1984-03-07

Family

ID=30296160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13092282U Pending JPS5936263U (ja) 1982-08-30 1982-08-30 半導体装置

Country Status (1)

Country Link
JP (1) JPS5936263U (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100761A (en) * 1980-12-16 1982-06-23 Fujitsu Ltd Semiconductor light sensitive device
JPS5892259A (ja) * 1981-11-27 1983-06-01 Fujitsu Ltd 複合半導体装置
JPS58154286A (ja) * 1982-03-10 1983-09-13 Fujitsu Ltd 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100761A (en) * 1980-12-16 1982-06-23 Fujitsu Ltd Semiconductor light sensitive device
JPS5892259A (ja) * 1981-11-27 1983-06-01 Fujitsu Ltd 複合半導体装置
JPS58154286A (ja) * 1982-03-10 1983-09-13 Fujitsu Ltd 半導体装置

Similar Documents

Publication Publication Date Title
JPS5858342U (ja) 混成集積回路
JPS58144855U (ja) 半導体装置
JPS5920632U (ja) 半導体装置
JPS5827936U (ja) 半導体装置
JPS5883149U (ja) 半導体装置
JPS58138332U (ja) 液相成長装置
JPS5954961U (ja) 半導体装置
JPS60130652U (ja) 半導体装置
JPS60163738U (ja) 半導体装置
JPS5984835U (ja) 半導体ペレツト
JPS58129655U (ja) 半導体光結合装置
JPS60181056U (ja) 半導体装置の電極
JPS6061746U (ja) ダイオ−ド
JPS6134733U (ja) 半導体ウエハ
JPS6094836U (ja) 半導体装置
JPS5939930U (ja) 半導体装置の組立て基板
JPS58116228U (ja) チツプキヤリア
JPS58147278U (ja) 混成集積回路装置
JPS60125747U (ja) コンデンサ
JPS59125835U (ja) 半導体装置
JPS58131526U (ja) 摺動用導電体
JPS5983029U (ja) 半導体基板
JPS58129643U (ja) 半導体光結合装置
JPS6054330U (ja) 半導体装置
JPS58150849U (ja) 半導体装置