JPS5987888A - 半導体レ−ザ素子 - Google Patents

半導体レ−ザ素子

Info

Publication number
JPS5987888A
JPS5987888A JP19793582A JP19793582A JPS5987888A JP S5987888 A JPS5987888 A JP S5987888A JP 19793582 A JP19793582 A JP 19793582A JP 19793582 A JP19793582 A JP 19793582A JP S5987888 A JPS5987888 A JP S5987888A
Authority
JP
Japan
Prior art keywords
stripe
resonator
layer
semiconductor laser
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19793582A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05875B2 (mo
Inventor
Haruhisa Takiguchi
滝口　治久
Kaneki Matsui
完益 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP19793582A priority Critical patent/JPS5987888A/ja
Publication of JPS5987888A publication Critical patent/JPS5987888A/ja
Publication of JPH05875B2 publication Critical patent/JPH05875B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP19793582A 1982-11-10 1982-11-10 半導体レ−ザ素子 Granted JPS5987888A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19793582A JPS5987888A (ja) 1982-11-10 1982-11-10 半導体レ−ザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19793582A JPS5987888A (ja) 1982-11-10 1982-11-10 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
JPS5987888A true JPS5987888A (ja) 1984-05-21
JPH05875B2 JPH05875B2 (mo) 1993-01-06

Family

ID=16382733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19793582A Granted JPS5987888A (ja) 1982-11-10 1982-11-10 半導体レ−ザ素子

Country Status (1)

Country Link
JP (1) JPS5987888A (mo)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4926431A (en) * 1987-08-04 1990-05-15 Sharp Kabushiki Kaisha Semiconductor laser device which is stable for a long period of time

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5536932A (en) * 1978-09-06 1980-03-14 Toshiba Corp Manufacturing of light emitting element
JPS55108789A (en) * 1979-01-18 1980-08-21 Nec Corp Semiconductor laser
JPS5640293A (en) * 1979-09-11 1981-04-16 Nec Corp Semiconductor laser
JPS59175182A (ja) * 1983-03-23 1984-10-03 Sharp Corp 半導体レ−ザ素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5536932A (en) * 1978-09-06 1980-03-14 Toshiba Corp Manufacturing of light emitting element
JPS55108789A (en) * 1979-01-18 1980-08-21 Nec Corp Semiconductor laser
JPS5640293A (en) * 1979-09-11 1981-04-16 Nec Corp Semiconductor laser
JPS59175182A (ja) * 1983-03-23 1984-10-03 Sharp Corp 半導体レ−ザ素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4926431A (en) * 1987-08-04 1990-05-15 Sharp Kabushiki Kaisha Semiconductor laser device which is stable for a long period of time

Also Published As

Publication number Publication date
JPH05875B2 (mo) 1993-01-06

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