JPS6010626A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To accurately etch by simultaneously forming a monitoring pattern for measuring the etching amount larger than a contacting hole at the place except the place where a semiconductor element is formed at the time of forming the hole. CONSTITUTION:An interlayer insulating film 2 is formed on a silicon substrate 1, and patterned. An n<+> type diffused layer 3 is formed on the substrate 1. A monitoring pattern 4 for measuring the etching amount of 5mumX5mum is formed on the place except a semiconductor element. The pattern 4 is formed simultaneously with the formation of a contacting hole. Since the etching amount is monitored by the pattern 4, the hole can be extremely accurately etched.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device that allows accurate measurement of the amount of etching when forming fine patterns.

First, the conventional etching amount control will be explained.

Conventionally, dry etching equipment has been used to form dry etching holes, and the amount of etching has been detected using a spectroscopic analyzer in the equipment. When a contact hole is formed based on the signal detected by the spectroscopic analyzer, the dry etching device stops etching to prevent unnecessary etching. Generally, this method detects the amount of change in signal intensity of the etching species. For this reason, when a fine pattern is formed and the size of the hole is made smaller, the amount of change in the signal due to the etching species decreases, making it difficult to accurately measure the amount of etching. there were.

This invention was developed in order to eliminate the drawbacks of the conventional ones as described above, and is used to measure the amount of etching in the formation of fine contact holes. By forming a monitor pattern for measuring the amount of etching, which is larger than the hole, at the same time as forming the contact hole in a location other than the semiconductor element, and monitoring this monitor pattern, a semiconductor device with precisely etched fine contact holes can be created. The purpose is to manufacture

An embodiment of the present invention will be described below with reference to the drawings.

In this example, etching of a contact hole of 128K FAMO8 will be described.

In the drawings, 1 is a silicon substrate, 2 is an interlayer insulating film that has been patterned on the silicon substrate 1,
3 is a diffusion layer 4 formed on the silicon substrate 1;
is a monitor pattern for measuring the amount of etching formed outside the semiconductor element and having a size of, for example, 5 μm×5 μm.

Next, the operation will be explained.

A contact hole (not shown) having a size of 2 μm×2 μm is formed in the interlayer insulating film 2 having a thickness of 8,000 mm. At this time, the part that will become the contact hole
In order to carry out measurement 1 of the amount of etching, the portions other than the monitor pattern 4, which was formed at a location separate from the contact ball and had a size of 58 m x 5 μm, were covered with resist.

Etching is performed by a dry etching device 4, and the amount of etching is detected by a spectroscopic analyzer in a monitor pattern 4 for measuring the amount of etching. Since the thickness of the interlayer insulating film 2 of the portion that will become the contact hole and the monitor pattern 4 for measuring the amount of etching (σ) is 8000A, the monitor pattern 4 for measuring the amount of etching sends a signal indicating that the etching has been completely etched. Etching stops when the information is transmitted to the device. Microscopic and SEM observations of contact holes made using this method revealed that contact holes with a size of 2 μm x 2 μm were completely etched.
57ts・1 In the above embodiment, the manufacturing of FAMO8 was described in 128, but if the semiconductor device requires precise etching of fine contact holes using a dry etching device, it can be etched using a general semiconductor device. Needless to say, it is also effective.

As explained above, the present invention provides a simultaneous ratio of a monitor pattern for measuring the amount of etching that is larger than the fine contact hole in a location other than the fine contact hole where the semiconductor element is formed when manufacturing a semiconductor device. Since the etching amount is monitored using this monitor pattern, it is possible to etch fine contact holes extremely accurately, which has the advantage that a stable semiconductor device can be obtained.

[Brief explanation of drawings]

The drawing is a sectional view of a main part of a semiconductor device for explaining an embodiment of the present invention. In the figure, 1 is a silicon substrate, 2 is an interlayer insulating film, 3 is an n+ diffusion layer, and 4 is a monitor pattern for measuring the amount of etching. Agent Masuo Oiwa (2 others) 2

Claims (2)

[Claims] (1) Contact hole σ formed when wiring between semiconductor elements] In etching, an etching having a predetermined size l larger than the contact ball is used to control the amount of etching of the interlayer insulating film when forming the contact hole. A method for manufacturing a semiconductor device, characterized in that a monitor pattern for measuring the amount of etching is formed at a location other than the semiconductor element at the same time as the contact hole, and completion of the formation of the monitor pattern is detected to complete the etching. (2) The method for manufacturing one row of semiconductor devices according to claim (1), wherein the size of the monitor pattern for measuring the amount of etching is a rectangle with a negative side of 5 μm or more.