JPS60109250A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS60109250A
JPS60109250A JP58216319A JP21631983A JPS60109250A JP S60109250 A JPS60109250 A JP S60109250A JP 58216319 A JP58216319 A JP 58216319A JP 21631983 A JP21631983 A JP 21631983A JP S60109250 A JPS60109250 A JP S60109250A
Authority
JP
Japan
Prior art keywords
layer
insulating layer
conductor layer
integrated circuit
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58216319A
Other languages
English (en)
Japanese (ja)
Inventor
Akihiro Tomosawa
明弘 友澤
Tasuku Unno
海野　翼
Nozomi Horino
堀野　望
Shigeru Shimada
茂 島田
Aimei Yoshiura
吉浦　愛明
Osamu Tsuchiya
修 土屋
Shozo Hosoda
細田　正蔵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP58216319A priority Critical patent/JPS60109250A/ja
Priority to FR848414909A priority patent/FR2555364B1/fr
Priority to GB08428534A priority patent/GB2150349B/en
Priority to KR1019840007169A priority patent/KR930004984B1/ko
Priority to DE19843442037 priority patent/DE3442037A1/de
Priority to IT8423631A priority patent/IT1206469B/it
Publication of JPS60109250A publication Critical patent/JPS60109250A/ja
Priority to US06/925,458 priority patent/US4782037A/en
Priority to SG418/88A priority patent/SG41888G/en
Priority to HK841/88A priority patent/HK84188A/xx
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP58216319A 1983-11-18 1983-11-18 半導体集積回路装置 Pending JPS60109250A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP58216319A JPS60109250A (ja) 1983-11-18 1983-11-18 半導体集積回路装置
FR848414909A FR2555364B1 (fr) 1983-11-18 1984-09-28 Procede de fabrication de connexions d'un dispositif a circuits integres a semi-conducteurs comportant en particulier un mitset
GB08428534A GB2150349B (en) 1983-11-18 1984-11-12 Process of fabricating semiconductor integrated circuit device
KR1019840007169A KR930004984B1 (ko) 1983-11-18 1984-11-15 반도체 집적회로 장치의 제조방법
DE19843442037 DE3442037A1 (de) 1983-11-18 1984-11-16 Verfahren zur herstellung einer integrierten halbleiterschaltung
IT8423631A IT1206469B (it) 1983-11-18 1984-11-16 Procedimento per fabbricare un dispositivo a circuito integrato a semiconduttori.
US06/925,458 US4782037A (en) 1983-11-18 1986-10-30 Process of fabricating a semiconductor insulated circuit device having a phosphosilicate glass insulating film
SG418/88A SG41888G (en) 1983-11-18 1988-06-27 Process of fabricating semiconductor integrated circuit device
HK841/88A HK84188A (en) 1983-11-18 1988-10-20 Process of fabricating a semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58216319A JPS60109250A (ja) 1983-11-18 1983-11-18 半導体集積回路装置

Publications (1)

Publication Number Publication Date
JPS60109250A true JPS60109250A (ja) 1985-06-14

Family

ID=16686661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58216319A Pending JPS60109250A (ja) 1983-11-18 1983-11-18 半導体集積回路装置

Country Status (2)

Country Link
JP (1) JPS60109250A (it)
IT (1) IT1206469B (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194643A (ja) * 1986-02-20 1987-08-27 Fujitsu Ltd 配線構造

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194643A (ja) * 1986-02-20 1987-08-27 Fujitsu Ltd 配線構造

Also Published As

Publication number Publication date
IT8423631A0 (it) 1984-11-16
IT1206469B (it) 1989-04-27

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