JPS60123024A - 液相エピタキシャル結晶成長方法および装置 - Google Patents

液相エピタキシャル結晶成長方法および装置

Info

Publication number
JPS60123024A
JPS60123024A JP58231822A JP23182283A JPS60123024A JP S60123024 A JPS60123024 A JP S60123024A JP 58231822 A JP58231822 A JP 58231822A JP 23182283 A JP23182283 A JP 23182283A JP S60123024 A JPS60123024 A JP S60123024A
Authority
JP
Japan
Prior art keywords
substrate crystal
melt
crystal
retaining plate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58231822A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0476204B2 (2
Inventor
Kenji Maruyama
研二 丸山
Michiharu Ito
伊藤　道春
Mitsuo Yoshikawa
吉河　満男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58231822A priority Critical patent/JPS60123024A/ja
Publication of JPS60123024A publication Critical patent/JPS60123024A/ja
Publication of JPH0476204B2 publication Critical patent/JPH0476204B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2913—Materials being Group IIB-VIA materials
    • H10P14/2917—Tellurides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3432—Tellurides

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP58231822A 1983-12-08 1983-12-08 液相エピタキシャル結晶成長方法および装置 Granted JPS60123024A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58231822A JPS60123024A (ja) 1983-12-08 1983-12-08 液相エピタキシャル結晶成長方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58231822A JPS60123024A (ja) 1983-12-08 1983-12-08 液相エピタキシャル結晶成長方法および装置

Publications (2)

Publication Number Publication Date
JPS60123024A true JPS60123024A (ja) 1985-07-01
JPH0476204B2 JPH0476204B2 (2) 1992-12-03

Family

ID=16929558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58231822A Granted JPS60123024A (ja) 1983-12-08 1983-12-08 液相エピタキシャル結晶成長方法および装置

Country Status (1)

Country Link
JP (1) JPS60123024A (2)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5159074A (ja) * 1974-11-20 1976-05-22 Tokyo Shibaura Electric Co Ekisoseichosochi
JPS5228107A (en) * 1975-08-28 1977-03-02 Taiho Kensetsu Kk Excavating bucket

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5159074A (ja) * 1974-11-20 1976-05-22 Tokyo Shibaura Electric Co Ekisoseichosochi
JPS5228107A (en) * 1975-08-28 1977-03-02 Taiho Kensetsu Kk Excavating bucket

Also Published As

Publication number Publication date
JPH0476204B2 (2) 1992-12-03

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