JPS60133557A - Recording system - Google Patents

Recording system

Info

Publication number
JPS60133557A
JPS60133557A JP23979183A JP23979183A JPS60133557A JP S60133557 A JPS60133557 A JP S60133557A JP 23979183 A JP23979183 A JP 23979183A JP 23979183 A JP23979183 A JP 23979183A JP S60133557 A JPS60133557 A JP S60133557A
Authority
JP
Japan
Prior art keywords
recording
voltage
information signal
electrode
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23979183A
Other languages
Japanese (ja)
Inventor
Tokuji Higashiyama
東山 髑司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23979183A priority Critical patent/JPS60133557A/en
Publication of JPS60133557A publication Critical patent/JPS60133557A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/08Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electrostatic charge injection; Record carriers therefor

Landscapes

  • Optical Recording Or Reproduction (AREA)

Abstract

PURPOSE:To record and reproduce signals with high SN and density and to extend the life of a recording electrode by a recording voltage by boosting the recording voltage when frequency is high and dropping the recording voltage in case of low drequency in accordance with the level of the frequncy of an information signal. CONSTITUTION:The 1st insulating film 103 and the 2nd insulating film 104 having a charge accumulating function are successively formed on the surface of a semiconductor layer 102 to form a recording medium. The recording electrode 107 to which the recording pulse voltage corresponding to an information signal to be recorded is applied is relatively moved and the charge corresponding to the information signal is accumulated in the 2nd insulating film 104. The reproducing electrode is relatively moved on the recording medium 101 and the change of electric characteristics of the recording medium to obtain a reproducing signal. The recording pulse voltage 108 is changed on the basis of the frequency of the information signal to be recorded. The recording voltage of a recording electrode stylus is finely controlled on the basis of the frequency of the information signal, so that the life of the electrode stylus is expanded.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は半導体層と絶縁膜とによって構成される記録
媒体を用いて情報信号を静電荷の形で記録する記録方式
に関するっ 〔発明の技術的背景とその問題r’a、 ]従来、IC
メモリ以外のいわゆる動的メモリ装置は、大きく分けて
磁気方式のディスクオたけテープ、光学方式ディスク、
静電容量方式ディスクに分類される。磁気方式のものは
記録、再生、消去を簡単に行なうことができるという大
きな利点を有しているが、記録密度が低いという欠点が
ある。これに対し、光学方式ディスク、静電容量方式デ
ィスクにおいては1ビデオ信号、オーディオ信号あるい
はテータ信号の情報信号を凹凸の形で塩化ビニルなどの
ディスク状記録媒体に記録し。
[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a recording method for recording information signals in the form of electrostatic charges using a recording medium composed of a semiconductor layer and an insulating film. Background and problems r'a, ] Conventional, IC
Dynamic memory devices other than memory are broadly divided into magnetic disk storage tapes, optical disks,
It is classified as a capacitive disk. The magnetic type has the great advantage of being able to perform recording, reproduction, and erasing easily, but has the disadvantage of low recording density. On the other hand, in optical discs and capacitive discs, an information signal such as a video signal, an audio signal, or a theta signal is recorded in a concave and convex form on a disc-shaped recording medium such as vinyl chloride.

光学的あるいは静電的に角生する方法を採用しているの
で、高密度の記録、再生が可能であるが、消去、再記録
が実用上不可能という欠点がある。
Since it employs an optical or electrostatic angulation method, high-density recording and reproduction is possible, but it has the disadvantage that erasing and re-recording are practically impossible.

再記録可能な光ディスクも種々提案されてはいるが、ま
だ実験段階のものがほとんどである。
Although various rewritable optical discs have been proposed, most of them are still in the experimental stage.

そこで発明者らは記録密度が高く、 しかも再記録の可
能な記録再生方式として、シリコンなどの半導体層に数
+^の酸化シリコン(Si0 )膜のよ2 うな第1のKbR膜を形成し、その上にさらに窒化シリ
コン(813N4)膜のような電荷蓄積機能を有する第
2の絶縁膜を形成させた構造の記録媒体を溝成シ2、こ
の記録媒体上に記録電極を配し、この記録電極に記録す
べき2値の情報信号に対応して記録パルス電圧を印加し
つつ記録電極を記録媒体にχ;1し、相対的に移動さぜ
ることにより、第1の絶縁膜のトンネル効果を利用して
第2の絶縁膜中に電荷を蓄積させる形で信号の記録を行
ない、一方、再生は再生室(、訴全1月い第2の絶縁膜
中の電荷蓄積状態に対応して半導体層中に生じる空乏層
の有無を静電容量の変化として検出することで行なう方
式を既に提案している。
Therefore, the inventors formed a first KbR film, such as a silicon oxide (Si0) film, on a semiconductor layer such as silicon, as a recording/reproducing method that has a high recording density and is capable of re-recording. A recording medium having a structure in which a second insulating film having a charge storage function such as a silicon nitride (813N4) film is further formed is formed on the groove 2, and recording electrodes are arranged on this recording medium. By moving the recording electrode relative to the recording medium while applying a recording pulse voltage corresponding to the binary information signal to be recorded on the electrode, the tunneling effect of the first insulating film is achieved. Signals are recorded by accumulating charges in the second insulating film using A method has already been proposed in which the presence or absence of a depletion layer occurring in a semiconductor layer is detected as a change in capacitance.

ところで、この方式では記録1F、極に記録パルス電圧
全印加し* FIL:録媒体に記録する場合、同−配弁
電圧では記録信号の周波数が高くなるにつれて11+生
出力は減少してくる。
By the way, in this method, when recording on a recording medium by applying the full recording pulse voltage to the recording 1F pole, the 11+ raw output decreases as the frequency of the recording signal increases with the same valve voltage.

すなわち、記録媒体の電荷がトラップされる量(つチリ
+fT生出力)は記録電極が記録媒体のある一点に印加
される時間と記録電圧に関係する。
In other words, the amount of charge trapped on the recording medium (fT raw output) is related to the time during which the recording electrode is applied to a certain point on the recording medium and the recording voltage.

ところが記録電極は記録密度を上げるために波長方の幅
を薄くしている。そして記録再生周波数特性を上げるた
めには、記録電圧もある程度高くすることになるが、記
録電圧を高くすると当然のことながら記録電極の寿命が
短くなる、という問題が/4:じる。
However, the width of the recording electrode in the wavelength direction is made thinner in order to increase the recording density. In order to improve the recording/reproducing frequency characteristics, the recording voltage must be increased to a certain extent, but as a matter of course, increasing the recording voltage shortens the life of the recording electrode, which is a problem.

つ壕り記録密度を上げるため、記録電圧を情報信号の周
波数が高い場合に最適に記録できるように設定すると情
報信号の周波数が低い場合に、最適記録電圧を超えた必
要以上の電圧が長時間記録電極に印加されるので記録電
極の寿命が短くなり逆に情報信号の周波数が低い場合に
最適に記録できる記録電圧に設定すると高密度に記録で
きなくなる、という問題が生じる。
In order to increase the recording density, the recording voltage is set to optimally record when the frequency of the information signal is high. When the frequency of the information signal is low, a voltage exceeding the optimal recording voltage is used for a long period of time. Since the voltage is applied to the recording electrode, the life of the recording electrode is shortened, and conversely, if the recording voltage is set to optimally record when the frequency of the information signal is low, there is a problem that high-density recording is no longer possible.

〔発明の目的〕[Purpose of the invention]

この発明の目的は、半導体を利用した記録媒体を用いて
情報信号の記録を高密度にかつ長寿命に行なうことを可
能とした記録方式を提供することにあろう 〔発明の概♂I〕 この発明1−t、半導体層の上に第1の絶縁膜および電
荷蓄積機能を有する第2の絶縁膜を順次形成してなる記
録媒体に、この上を相対的に移動する、;1シ録’t(
T、 ’、伊を介して記録すべき情報信号に対しbした
記2幡パルス′IE圧を印加して情報信号に対応だ電荷
を・r’> 2の絶縁膜に蓄積することにより記録を行
なうJ、%i ’FF 1 記録パルス電圧を記・録す
る周波数により、粗化させることを特徴としている。
The purpose of this invention is to provide a recording method that makes it possible to record information signals with high density and over a long life using a recording medium using a semiconductor. Invention 1-t, a recording medium formed by sequentially forming a first insulating film and a second insulating film having a charge storage function on a semiconductor layer, and moving relatively thereon; t(
Recording is performed by applying the 2-pulse IE pressure described above to the information signal to be recorded via T, ', and I, and accumulating a charge corresponding to the information signal in the insulating film with r'> 2. J, %i 'FF 1 The recording pulse voltage is roughened depending on the recording frequency.

すなわら、記録酊生特性は同一記録電圧では族1反数が
高くなるにつれてtJr生出力id il’?少1.S
N比が悪化するため、情1′14信号の周波数の高低に
よジ、周波数が?7jい場什は記録電圧を高くし、周波
数が低いl場合は記O屯圧を低くすることにより、高密
度にSN比も良好に記録再生でき、記録電極も長、ノナ
酷になるように記録電圧を制御するようにしたものであ
る。
In other words, the recording characteristic is that at the same recording voltage, as the family 1 inverse number increases, the tJr raw output id il'? Little 1. S
Since the N ratio deteriorates, the frequency may vary depending on the frequency of the information 1'14 signal. By increasing the recording voltage when the frequency is low and lowering the recording pressure when the frequency is low, it is possible to record and reproduce at high density with a good signal-to-noise ratio, and the recording electrode is also long and thin. The recording voltage is controlled.

〔づC明 のフカ “14−] この発明によれば、情報信号を高密度にSN比も良νf
にH己録11f牛ができ、また記録電柾長力命化という
点についても有利となる。
[ZuC light hook “14-] According to this invention, the information signal can be transmitted with high density and the S/N ratio is also good.
It is possible to record a record 11f, and it is also advantageous in terms of being able to make a record of power.

〔発明の実施例〕[Embodiments of the invention]

第1 f:g+は、この発明の一実施例における概略構
成図である。図において記録媒体(101)は半2!を
体層(102)例えばN型のシリコン単結晶基板の一ヒ
に2π1の絶(硬膜1032例えば20A8度の酸化シ
リコン(Si0 )膜を形成1〜さらにその上に500
A程度寸ま たけそれ以下の厚さのSiN′Jの電荷蓄積状態全4 有する21ル2の絶縁膜(1,04)を形成したもので
λ;ンリ、半導体(102)の表面には4屯層(1’O
5)が必要に応じて被着されている。
1st f:g+ is a schematic configuration diagram in one embodiment of the present invention. In the figure, the recording medium (101) is half 2! The body layer (102), for example, an N-type silicon single crystal substrate, is coated with a silicon oxide (Si0) film of 2π1 (dural layer 1032, for example, 20A, 8 degrees Celsius).
The insulating film (1,04) of 21 l2 is formed with a total charge accumulation state of 4 in SiN'J with a thickness of about A and a thickness of λ; Tun layer (1'O
5) is applied as necessary.

そしてこのt1d録媒体(1011)の上に信−号のd
α録を行なうための記録電極(107)を被カーした記
録電極針(106)を接触させ記録回路(]、O9)よ
り供給される高電圧パルス信号(108)を印加しなが
ら、記録媒体(101)に対し相対的に移動させ、13
号の記録を行々う。
Then, on this t1d recording medium (1011), the signal d
The recording electrode needle (106) covered with the recording electrode (107) for performing α recording is brought into contact with the recording medium (107) while applying the high voltage pulse signal (108) supplied from the recording circuit (O9). 101), 13
Let's record the issue.

第2図は、第1図の概略構成図中の記録回路(109)
の−119成例とビデオ[イカ記録の例it(よる簡単
な回路ブロック図である。
Figure 2 shows the recording circuit (109) in the schematic configuration diagram of Figure 1.
It is a simple circuit block diagram of the -119 example and video [Squid record example it].

INFO’J’端子より入力されたビデオ信号は、ビデ
オ増幅器(201)により一旦増幅される。増幅された
ビデオ信号は、記録回路(所)とFM変調器(202)
に供給される。FM変調器(202)に供給されたビデ
オ信号は、FM変調され、例えば周波数偏移4.8M1
ff、〜5Lil(ZのFM変調波に変換される。
A video signal input from the INFO'J' terminal is once amplified by a video amplifier (201). The amplified video signal is sent to a recording circuit (place) and an FM modulator (202).
supplied to The video signal fed to the FM modulator (202) is FM modulated, e.g. with a frequency deviation of 4.8M1
ff, ~5Lil (converted to Z FM modulated wave.

その後FM変調波は、記録回路(1i9.)の記録ノく
ルス出力トランジスタ(207) e駆動するためコン
バト′−タ回路(203)によりfシ1]えば0■〜5
■のディジタル信乞に変換され、記録パルス出力トラン
ジスタ(2O7)に入力される。
Thereafter, the FM modulated wave is converted to a converter circuit (203) in order to drive the recording pulse output transistor (207) of the recording circuit (1i9.).
It is converted into a digital signal (2) and input to the recording pulse output transistor (2O7).

一方、記録回路(D」)に供給されたビデオ信号は、ク
ランプダイオード(204)により直流分を再生され、
反転増幅トランジスタ(205)でイ[対極性を反転き
れる。反転されたビデオ信号は、「匡源電圧jj;11
団1トランジスタ(20t3)のベースに印加され、電
蝕?Iへ圧制御・111トランジスタ(206)は電諒
電j玉Vecンー人力さF1フこビデオ信号の電位に応
じた電圧Aに1間御する。′11L圧Aは記録パルス出
力トランジスタ(2(17’)に供給される。前述した
ように記録ノ々ルス出力トランジスタ(207)には、
ディジタル信号に変換されたFM変調波がベースに入力
されているので、この信号に応じた記録パルスケ出力し
、その振幅(は、電源電圧開側1トランジスタ(206
)によシビデオ信号の電位に応じ制r111された電圧
Aとフrる。記録パルス出力トランジスタ(207)に
より、出力振幅へのパルスに変+−牽!したI(’ M
変M’31皮は、0(JTPU’l’から出力され第1
図に示す記録′市極釘°(」川)へ印加される。
On the other hand, the video signal supplied to the recording circuit (D'') has its DC component reproduced by the clamp diode (204).
The inverting amplification transistor (205) can invert the polarity. The inverted video signal is expressed as “Main source voltage jj;
Applied to the base of group 1 transistor (20t3), electrolytic corrosion? The voltage control transistor 111 (206) controls the voltage A corresponding to the potential of the video signal for one period. '11L pressure A is supplied to the recording pulse output transistor (2 (17'). As mentioned above, the recording pulse output transistor (207)
Since the FM modulated wave converted to a digital signal is input to the base, a recording pulse corresponding to this signal is output, and its amplitude (is
), the voltage A is controlled according to the potential of the video signal. The recording pulse output transistor (207) changes the pulse to output amplitude! I did it (' M
The odd M'31 skin is 0 (output from JTPU'l' and the first
The record shown in the figure is applied to the record 'Ichigoku Kugi° (' River).

ず々わち、本発明の実力01例で)寸、ビデオ信号の記
録再生に従来から各種の記録媒体の記録41r生方式に
用いられている←゛[\4変変調式全例として;ルト明
している。この方式は、周知の)「0リビデオ信号の電
位により周波数を変化させる方式であり、例えばビデオ
信号の¥(を位が低い場合(例えば水平型111回期信
号部分)は、搬送波周波数を低く12、篩い311合(
例えば白ピーク部分)は、搬送波周波数を高ぐする変調
方式である。そこでこのことから記録すべきビデオ信号
に対応し/こIi’ M変調波をその周波数に応じ出力
電圧の変化するパルスを発生するには、記録パルスを出
力する記録パルス出力トランジスタ(207)に供給さ
れ記録パルスの振幅電圧を決定する電圧A(ill−電
源上圧制m11トランジスタ(2(H3)によQl ビ
デオ信号で制御すれば良い、っ・iす、電帥電圧1ii
11 fjll l・ランジスタ(206)は、PNP
型トランジスタで、1bす、通常用1いられる同期負の
ビデオ信砂は、ビテオ増1Vii器(201)で−目反
転はれ+[11JCII正のビデオ信号となり電源′1
E圧!li’制御トランジスタ(206)のベースに入
力されているので、 FM変調器(202)に斐;ii
4された周?皮数の低い水平垂直同期信号部分はベース
NT、位が一ヒっでいるので、′(LIE 、A kt
 低くなり記録パルス出力トランジスタ(20?)から
[バカされる記録パルスの振1咄は、その′重圧Aに対
応してイ(Q (なる。
As an example of the actual performance of the present invention, the 41r recording method has been conventionally used for recording and reproducing video signals on various recording media. It's clear. This method is a method in which the frequency is changed by the potential of the video signal (well-known). , sieve 311 go (
For example, the white peak portion) is a modulation method that increases the carrier frequency. Therefore, in order to generate a pulse whose output voltage changes according to the frequency of the Ii' M modulated wave corresponding to the video signal to be recorded, it is necessary to supply it to the recording pulse output transistor (207) that outputs the recording pulse. The voltage A (ill) that determines the amplitude voltage of the recording pulse can be controlled by the Ql video signal by the m11 transistor (2 (H3)) on the power supply.
11 fjll l transistor (206) is PNP
The synchronous negative video signal, which is normally used in 1b type transistor, is inverted by the video intensifier 1Vii (201).
E pressure! li' is input to the base of the control transistor (206), so it is input to the FM modulator (202);ii
4 laps? Since the horizontal/vertical synchronizing signal part with a low frequency has the base NT and the digit is one hit,'(LIE, A kt
The recording pulse output transistor (20?) becomes low and the recording pulse is rejected by the recording pulse output transistor (20?) corresponding to the heavy pressure A.

′:j−た〕rr’3に1・” %I変i1.!]器(
202)に変3+4 ’+’:れた周波g’iノ商い自
ピーク信′rj部分t;1−ベース賊位が下っているの
で電圧Aは7H’、、5 <なり、記録パルス出力トラ
ンジスタ(207)から出力される記録パルスの振幅は
、その電圧Aに対応してAll くなる。
′:j-ta]rr'3 to 1・”%Ichangei1.!] device (
202) Changed to 3+4 '+': Frequency g'i's current peak signal 'rj part t; 1-Base level has decreased, so voltage A becomes 7H', 5 <, recording pulse output transistor The amplitude of the recording pulse output from (207) becomes All corresponding to the voltage A.

以−J: iiR,明し/こように、本発明によれば、
記録媒体からSN比の良好な高密度な記録1]」生竹性
が得られ、また、記録電極針の寿命を決りiテする記録
電圧を情報信号の周波数により微aV++に1iil制
御しているので記録電械針の寿命が長くなる。そしてI
’−j+杼の理由で記録パルス出力トランジスタの発熱
がおさえられるので回路が安定となり、寸た省電力等に
も効果がある。
I-J: iiR, Akashi/Thus, according to the present invention,
High-density recording with a good S/N ratio is achieved from the recording medium.The recording voltage, which determines the life of the recording electrode needle, is controlled to a minute aV++ by the frequency of the information signal. Therefore, the life of the recording machine needle is extended. And I
Since the heat generation of the recording pulse output transistor is suppressed due to '-j+shuttle', the circuit becomes stable and there is also an effect in saving power to some extent.

【図面の簡単な説明】[Brief explanation of the drawing]

第11凶は、本発ψイの一実施例における概略h:’t
 1r父図、第2図は、第1図のイ既略(11!成図中
の紀7j−1.回路の一構成例を示す図である。 101 記1g1tli一体、102 半導体層、10
3−第1の絶r& I!匁、104 第2の1色縁膜、
105導伝層、1 0 6 − K: 金k ’FFi
、 MVg 企1°、1 0 7 ≦e&’#?i5極
、108 記録パルス電圧信号
The eleventh problem is the outline h:'t in one embodiment of the present invention ψ
1r father diagram, FIG. 2 is a diagram showing an example of the configuration of the circuit shown in FIG.
3-First absolute r & I! Momme, 104 second monochromatic membrane,
105 conductive layer, 106-K: gold k'FFi
, MVg 1°, 1 0 7 ≦e&'#? i5 pole, 108 recording pulse voltage signal

Claims (1)

【特許請求の範囲】[Claims] 半導体層の上に第1の絶縁膜および電荷蓄積機能を有す
る第2の絶縁膜を順次形成してなる記録媒体と、この記
録媒体」二ヲ記録すべき情報信号に対応し/こ記録パル
ス電圧が印加された記録電極を相対的に移動せしめて情
報信号に対応した電荷を前記・′?ζ2の絶縁膜に蓄積
することにより前記情報信号を記録する記録手段と、上
記記録媒体上を再生電極を相対的に移動せしめてこの再
生電極を介して記録媒体の電気的特性の変化を検出する
ことにより再生信号を得る再生手段とを備えた記録再生
方式において、記録すべき情報信号の周波数によって前
記記録パルス電圧の記録電圧全変化させることを特徴と
する記録方式。
A recording medium in which a first insulating film and a second insulating film having a charge storage function are sequentially formed on a semiconductor layer, and a recording pulse voltage corresponding to an information signal to be recorded. is applied to the recording electrode, and the electric charge corresponding to the information signal is generated by moving the recording electrodes to which the information signal is applied. A recording means for recording the information signal by accumulating it on an insulating film of ζ2, and a reproducing electrode that is moved relatively over the recording medium to detect a change in the electrical characteristics of the recording medium through the reproducing electrode. 1. A recording/reproducing system comprising a reproducing means for obtaining a reproducing signal by means of a reproducing means, characterized in that the total recording voltage of the recording pulse voltage is changed depending on the frequency of the information signal to be recorded.
JP23979183A 1983-12-21 1983-12-21 Recording system Pending JPS60133557A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23979183A JPS60133557A (en) 1983-12-21 1983-12-21 Recording system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23979183A JPS60133557A (en) 1983-12-21 1983-12-21 Recording system

Publications (1)

Publication Number Publication Date
JPS60133557A true JPS60133557A (en) 1985-07-16

Family

ID=17049927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23979183A Pending JPS60133557A (en) 1983-12-21 1983-12-21 Recording system

Country Status (1)

Country Link
JP (1) JPS60133557A (en)

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