JPS61159570A - イオン注入装置 - Google Patents

イオン注入装置

Info

Publication number
JPS61159570A
JPS61159570A JP59277683A JP27768384A JPS61159570A JP S61159570 A JPS61159570 A JP S61159570A JP 59277683 A JP59277683 A JP 59277683A JP 27768384 A JP27768384 A JP 27768384A JP S61159570 A JPS61159570 A JP S61159570A
Authority
JP
Japan
Prior art keywords
wafer
chamber
ion implantation
vacuum
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59277683A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0224908B2 (2
Inventor
Kazunari Imahashi
今橋　一成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP59277683A priority Critical patent/JPS61159570A/ja
Publication of JPS61159570A publication Critical patent/JPS61159570A/ja
Publication of JPH0224908B2 publication Critical patent/JPH0224908B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3308—Vertical transfer of a single workpiece
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP59277683A 1984-12-31 1984-12-31 イオン注入装置 Granted JPS61159570A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59277683A JPS61159570A (ja) 1984-12-31 1984-12-31 イオン注入装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59277683A JPS61159570A (ja) 1984-12-31 1984-12-31 イオン注入装置

Publications (2)

Publication Number Publication Date
JPS61159570A true JPS61159570A (ja) 1986-07-19
JPH0224908B2 JPH0224908B2 (2) 1990-05-31

Family

ID=17586846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59277683A Granted JPS61159570A (ja) 1984-12-31 1984-12-31 イオン注入装置

Country Status (1)

Country Link
JP (1) JPS61159570A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100413884B1 (ko) * 1996-10-29 2004-04-28 닛신덴키 가부시키 가이샤 기판처리장치 및 방법
WO2010050453A1 (ja) * 2008-10-31 2010-05-06 株式会社アルバック イオン注入装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51115290A (en) * 1975-03-10 1976-10-09 Signetics Corp Vacuum spattering process and the apparatus thereof
JPS5763678A (en) * 1980-10-03 1982-04-17 Hitachi Ltd Sputtering device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51115290A (en) * 1975-03-10 1976-10-09 Signetics Corp Vacuum spattering process and the apparatus thereof
JPS5763678A (en) * 1980-10-03 1982-04-17 Hitachi Ltd Sputtering device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100413884B1 (ko) * 1996-10-29 2004-04-28 닛신덴키 가부시키 가이샤 기판처리장치 및 방법
WO2010050453A1 (ja) * 2008-10-31 2010-05-06 株式会社アルバック イオン注入装置

Also Published As

Publication number Publication date
JPH0224908B2 (2) 1990-05-31

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