JPS61160924A - 半導体薄膜結晶層の製造方法 - Google Patents

半導体薄膜結晶層の製造方法

Info

Publication number
JPS61160924A
JPS61160924A JP60000870A JP87085A JPS61160924A JP S61160924 A JPS61160924 A JP S61160924A JP 60000870 A JP60000870 A JP 60000870A JP 87085 A JP87085 A JP 87085A JP S61160924 A JPS61160924 A JP S61160924A
Authority
JP
Japan
Prior art keywords
film
thin film
tungsten
insulating film
titanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60000870A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0236054B2 (2
Inventor
Iwao Higashinakagaha
東中川　巌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60000870A priority Critical patent/JPS61160924A/ja
Publication of JPS61160924A publication Critical patent/JPS61160924A/ja
Publication of JPH0236054B2 publication Critical patent/JPH0236054B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3818—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Recrystallisation Techniques (AREA)
JP60000870A 1985-01-09 1985-01-09 半導体薄膜結晶層の製造方法 Granted JPS61160924A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60000870A JPS61160924A (ja) 1985-01-09 1985-01-09 半導体薄膜結晶層の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60000870A JPS61160924A (ja) 1985-01-09 1985-01-09 半導体薄膜結晶層の製造方法

Publications (2)

Publication Number Publication Date
JPS61160924A true JPS61160924A (ja) 1986-07-21
JPH0236054B2 JPH0236054B2 (2) 1990-08-15

Family

ID=11485702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60000870A Granted JPS61160924A (ja) 1985-01-09 1985-01-09 半導体薄膜結晶層の製造方法

Country Status (1)

Country Link
JP (1) JPS61160924A (2)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450410A (en) * 1987-08-21 1989-02-27 Agency Ind Science Techn Manufacture of semiconductor single crystal layer
JP2007042803A (ja) * 2005-08-02 2007-02-15 Honda Motor Co Ltd イオン注入マスクおよびその製造方法、並びにイオン注入マスクを用いた炭化珪素半導体装置およびその製造方法
KR101161456B1 (ko) * 2005-08-02 2012-07-02 신덴겐코교 가부시키가이샤 이온 주입 마스크 및 그 제조 방법과, 이온 주입 마스크를이용한 탄화규소 반도체 장치 및 그 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5516425A (en) * 1978-07-21 1980-02-05 Toshiba Corp Semiconductor device
JPS5671954A (en) * 1979-11-19 1981-06-15 Seiko Epson Corp Mos type semiconductor device
JPS58139423A (ja) * 1982-02-15 1983-08-18 Fujitsu Ltd ラテラルエピタキシヤル成長法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5516425A (en) * 1978-07-21 1980-02-05 Toshiba Corp Semiconductor device
JPS5671954A (en) * 1979-11-19 1981-06-15 Seiko Epson Corp Mos type semiconductor device
JPS58139423A (ja) * 1982-02-15 1983-08-18 Fujitsu Ltd ラテラルエピタキシヤル成長法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450410A (en) * 1987-08-21 1989-02-27 Agency Ind Science Techn Manufacture of semiconductor single crystal layer
JP2007042803A (ja) * 2005-08-02 2007-02-15 Honda Motor Co Ltd イオン注入マスクおよびその製造方法、並びにイオン注入マスクを用いた炭化珪素半導体装置およびその製造方法
KR101161456B1 (ko) * 2005-08-02 2012-07-02 신덴겐코교 가부시키가이샤 이온 주입 마스크 및 그 제조 방법과, 이온 주입 마스크를이용한 탄화규소 반도체 장치 및 그 제조 방법

Also Published As

Publication number Publication date
JPH0236054B2 (2) 1990-08-15

Similar Documents

Publication Publication Date Title
US6710411B2 (en) Method for crystallizing silicon film and thin film transistor and fabricating method using the same
JPS61160924A (ja) 半導体薄膜結晶層の製造方法
JP2751223B2 (ja) 半導体装置およびその製造方法
JPS61174767A (ja) 半導体素子電極
JPH03262127A (ja) 半導体装置の製造方法
JP3325629B2 (ja) 半導体装置の製造方法
JP3270512B2 (ja) 半導体装置の製造方法
JP2603623B2 (ja) 三次元半導体集積回路の製造方法
JP2001035854A (ja) 膜の形成方法および電極あるいは配線の形成方法
JPH04233758A (ja) 半導体装置とその製造方法
JPS6362893B2 (2)
JPS5810816A (ja) 半導体装置
JPS6059742B2 (ja) 半導体装置およびその製造方法
JPS63265464A (ja) 半導体装置の製造方法
JP2605286B2 (ja) 半導体装置の製造方法
JP2569402B2 (ja) 半導体薄膜結晶層の製造方法
JPH03250620A (ja) 半導体装置の製造方法
JPS62206813A (ja) 再結晶化処理用保護膜
JPS62134922A (ja) 半導体装置の製造方法
JPS61201414A (ja) シリコン単結晶層の製造方法
JPS60123026A (ja) 半導体装置の製造方法
JPS63114144A (ja) 半導体装置の製造方法
JPH05343688A (ja) 金属ゲイト電界効果型半導体装置の作製方法
JPS6055614A (ja) 半導体単結晶膜の製造方法
JPH0574218B2 (2)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term