JPS61163264A - 白金族金属の酸化膜形成法 - Google Patents

白金族金属の酸化膜形成法

Info

Publication number
JPS61163264A
JPS61163264A JP306085A JP306085A JPS61163264A JP S61163264 A JPS61163264 A JP S61163264A JP 306085 A JP306085 A JP 306085A JP 306085 A JP306085 A JP 306085A JP S61163264 A JPS61163264 A JP S61163264A
Authority
JP
Japan
Prior art keywords
oxide film
platinum group
platinum
ion
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP306085A
Other languages
English (en)
Japanese (ja)
Inventor
Keiji Tsukada
啓二 塚田
Takuya Maruizumi
丸泉　琢也
Hiroyuki Miyagi
宮城　宏行
Teruaki Kobayashi
映章 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP306085A priority Critical patent/JPS61163264A/ja
Priority to DK9886A priority patent/DK9886A/da
Priority to SU864013137A priority patent/SU1581217A3/ru
Priority to DD28610686A priority patent/DD261786A5/de
Priority to DE19863600575 priority patent/DE3600575C2/de
Publication of JPS61163264A publication Critical patent/JPS61163264A/ja
Priority to SU864028493A priority patent/SU1577697A3/ru
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
JP306085A 1985-01-11 1985-01-11 白金族金属の酸化膜形成法 Pending JPS61163264A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP306085A JPS61163264A (ja) 1985-01-11 1985-01-11 白金族金属の酸化膜形成法
DK9886A DK9886A (da) 1985-01-11 1986-01-09 Naphthalenderivater og fremstilling deraf
SU864013137A SU1581217A3 (ru) 1985-01-11 1986-01-09 Способ получени нафталиновых производных
DD28610686A DD261786A5 (de) 1985-01-11 1986-01-10 Verfahren zur herstellung von naphthalinderivaten
DE19863600575 DE3600575C2 (de) 1985-01-11 1986-01-10 Verfahren zur Bildung eines Oxidfilms aus einem Element der Platingruppe
SU864028493A SU1577697A3 (ru) 1985-01-11 1986-11-13 Способ получени лактона нафталиновой кислоты

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP306085A JPS61163264A (ja) 1985-01-11 1985-01-11 白金族金属の酸化膜形成法

Publications (1)

Publication Number Publication Date
JPS61163264A true JPS61163264A (ja) 1986-07-23

Family

ID=11546779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP306085A Pending JPS61163264A (ja) 1985-01-11 1985-01-11 白金族金属の酸化膜形成法

Country Status (5)

Country Link
JP (1) JPS61163264A (da)
DD (1) DD261786A5 (da)
DE (1) DE3600575C2 (da)
DK (1) DK9886A (da)
SU (2) SU1581217A3 (da)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19620022C2 (de) * 1995-05-17 2002-09-19 Hyundai Electronics Ind Verfahren zur Herstellung einer Diffusionssperrmetallschicht in einer Halbleitervorrichtung
JP2009107773A (ja) * 2007-10-30 2009-05-21 Mitsubishi Electric Corp プリンタ装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0305300B1 (en) * 1987-08-28 1996-04-24 Sumitomo Electric Industries Limited A method for producing a superconducting article
RU2551655C1 (ru) * 2014-05-15 2015-05-27 Федеральное государственное бюджетное учреждение науки Новосибирский институт органической химии им. Н.Н. Ворожцова Сибирского отделения Российской академии наук (НИОХ СО РАН) Способ получения (3-гидроксипропил)нафтолов

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5331971A (en) * 1976-09-06 1978-03-25 Nippon Telegr & Teleph Corp <Ntt> Forming method of metal oxide film or semiconductor oxide film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5331971A (en) * 1976-09-06 1978-03-25 Nippon Telegr & Teleph Corp <Ntt> Forming method of metal oxide film or semiconductor oxide film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19620022C2 (de) * 1995-05-17 2002-09-19 Hyundai Electronics Ind Verfahren zur Herstellung einer Diffusionssperrmetallschicht in einer Halbleitervorrichtung
JP2009107773A (ja) * 2007-10-30 2009-05-21 Mitsubishi Electric Corp プリンタ装置

Also Published As

Publication number Publication date
DE3600575C2 (de) 1987-03-19
DK9886D0 (da) 1986-01-09
DD261786A5 (de) 1988-11-09
SU1577697A3 (ru) 1990-07-07
SU1581217A3 (ru) 1990-07-23
DE3600575A1 (de) 1986-07-17
DK9886A (da) 1986-07-11

Similar Documents

Publication Publication Date Title
Al Jaaf-Golze et al. On the voltammetry of curves of Pt (111) in aqueous solutions
Gomer et al. Mobility and adsorption of hydrogen on tungsten
DE102010002734A1 (de) Titanelektrodenmaterial und Oberflächenbehandlungsverfahren für Titanelektrodenmaterial
JP2731886B2 (ja) シングルイオン注入装置及び方法
Tsaur et al. Ion‐beam‐induced modification of silicide formation in rare‐earth metals: Er‐Si and Tb‐Si systems
GB1599668A (en) Semiconductors
JPS61163264A (ja) 白金族金属の酸化膜形成法
Grenness et al. Electrocatalytic activation of tungsten and tungstic oxide doped with platinum by means of ion implantation
Boggs The Oxidation of Tin: III. The Mechanisms of Oxidation of Pure Tin and Their Dependence on Time and Oxygen Pressure
Van Hassel et al. Microstructure and thermal stability of Fe, Ti, and Ag implanted yttria-stabilized zirconia
McCabe et al. The Oxidation of Rhodium-Platinum
US3887446A (en) Electrochemical preparation of metallic tellurides
Hoflund et al. An ESD and SIMS study of the composition of platinized, antimony-doped tin oxide films. I
Neely Recovery of electron-irradiated zirconium at low temperatures
He et al. The effect of ion implantation of Ar on the aqueous corrosion resistance of Zr-4 alloy
JP3061973B2 (ja) シリコン基板の多孔質化法及び多孔質シリコン層の形成方法
Maydell-Ondrusz et al. Formation of TiSi2 by electron beam annealing of arsenic implanted titanium films on silicon substrates
Inglott et al. The interaction between rhodium and impurity atoms of sp elements dissolved in palladium
Wieser et al. Influence of flash-lamp annealing on the diffusion behaviour of ion implanted boron profiles
Patnaik et al. Influence of an Applied Field on the Tarnishing of Silver and Copper in Iodine Vapour
RU1800501C (ru) Способ изготовлени бипол рных транзисторов
Cooney et al. Microstructural and corrosive interactions in phosphorus ion implanted 304L stainless steel—II. Alterations in corrosion resistance by implantation
Fowler et al. Examples of Multiple Pion Production in n− p Collisions Observed at the Cosmotron
Thompson et al. Electrochemical behavior of titanium implanted with platinum
JPS603126A (ja) 絶縁層の形成方法