JPS61222986A - 結晶成長膜厚制御法 - Google Patents

結晶成長膜厚制御法

Info

Publication number
JPS61222986A
JPS61222986A JP16912584A JP16912584A JPS61222986A JP S61222986 A JPS61222986 A JP S61222986A JP 16912584 A JP16912584 A JP 16912584A JP 16912584 A JP16912584 A JP 16912584A JP S61222986 A JPS61222986 A JP S61222986A
Authority
JP
Japan
Prior art keywords
growth
crystal
crystal growth
composition ratio
shutter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16912584A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0331677B2 (da
Inventor
Kimihiro Oota
太田　公廣
Suminori Sakamoto
坂本　統徳
Itaru Nakagawa
格 中川
Naoyuki Kawai
直行 河合
Takeshi Kojima
猛 小島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP16912584A priority Critical patent/JPS61222986A/ja
Publication of JPS61222986A publication Critical patent/JPS61222986A/ja
Priority to US07/092,348 priority patent/US4855013A/en
Publication of JPH0331677B2 publication Critical patent/JPH0331677B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP16912584A 1984-08-13 1984-08-13 結晶成長膜厚制御法 Granted JPS61222986A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP16912584A JPS61222986A (ja) 1984-08-13 1984-08-13 結晶成長膜厚制御法
US07/092,348 US4855013A (en) 1984-08-13 1987-09-02 Method for controlling the thickness of a thin crystal film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16912584A JPS61222986A (ja) 1984-08-13 1984-08-13 結晶成長膜厚制御法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP24511090A Division JPH03115190A (ja) 1990-09-14 1990-09-14 混晶組成比決定法

Publications (2)

Publication Number Publication Date
JPS61222986A true JPS61222986A (ja) 1986-10-03
JPH0331677B2 JPH0331677B2 (da) 1991-05-08

Family

ID=15880743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16912584A Granted JPS61222986A (ja) 1984-08-13 1984-08-13 結晶成長膜厚制御法

Country Status (1)

Country Link
JP (1) JPS61222986A (da)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4874484A (da) * 1972-01-12 1973-10-06
JPS6356199A (ja) * 1986-08-25 1988-03-10 Omron Tateisi Electronics Co パルスモ−タ制御装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4874484A (da) * 1972-01-12 1973-10-06
JPS6356199A (ja) * 1986-08-25 1988-03-10 Omron Tateisi Electronics Co パルスモ−タ制御装置

Also Published As

Publication number Publication date
JPH0331677B2 (da) 1991-05-08

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term