JPS61236677A - 半導体薄膜結晶層の製造方法 - Google Patents

半導体薄膜結晶層の製造方法

Info

Publication number
JPS61236677A
JPS61236677A JP60074373A JP7437385A JPS61236677A JP S61236677 A JPS61236677 A JP S61236677A JP 60074373 A JP60074373 A JP 60074373A JP 7437385 A JP7437385 A JP 7437385A JP S61236677 A JPS61236677 A JP S61236677A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
deflection
crystal layer
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60074373A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0440319B2 (cs
Inventor
Kyoichi Suguro
恭一 須黒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60074373A priority Critical patent/JPS61236677A/ja
Priority to US06/762,374 priority patent/US4662949A/en
Priority to US06/904,942 priority patent/US4746803A/en
Publication of JPS61236677A publication Critical patent/JPS61236677A/ja
Publication of JPH0440319B2 publication Critical patent/JPH0440319B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP60074373A 1985-02-15 1985-04-10 半導体薄膜結晶層の製造方法 Granted JPS61236677A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60074373A JPS61236677A (ja) 1985-04-10 1985-04-10 半導体薄膜結晶層の製造方法
US06/762,374 US4662949A (en) 1985-02-15 1985-08-05 Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam
US06/904,942 US4746803A (en) 1985-02-15 1986-09-08 Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60074373A JPS61236677A (ja) 1985-04-10 1985-04-10 半導体薄膜結晶層の製造方法

Publications (2)

Publication Number Publication Date
JPS61236677A true JPS61236677A (ja) 1986-10-21
JPH0440319B2 JPH0440319B2 (cs) 1992-07-02

Family

ID=13545300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60074373A Granted JPS61236677A (ja) 1985-02-15 1985-04-10 半導体薄膜結晶層の製造方法

Country Status (1)

Country Link
JP (1) JPS61236677A (cs)

Also Published As

Publication number Publication date
JPH0440319B2 (cs) 1992-07-02

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