JPS6131554B2 - - Google Patents
Info
- Publication number
- JPS6131554B2 JPS6131554B2 JP55151935A JP15193580A JPS6131554B2 JP S6131554 B2 JPS6131554 B2 JP S6131554B2 JP 55151935 A JP55151935 A JP 55151935A JP 15193580 A JP15193580 A JP 15193580A JP S6131554 B2 JPS6131554 B2 JP S6131554B2
- Authority
- JP
- Japan
- Prior art keywords
- word line
- potential
- output signal
- earth
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 claims description 32
- 230000001052 transient effect Effects 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55151935A JPS5778695A (en) | 1980-10-29 | 1980-10-29 | Semiconductor storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55151935A JPS5778695A (en) | 1980-10-29 | 1980-10-29 | Semiconductor storage device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5778695A JPS5778695A (en) | 1982-05-17 |
| JPS6131554B2 true JPS6131554B2 (fr) | 1986-07-21 |
Family
ID=15529411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55151935A Granted JPS5778695A (en) | 1980-10-29 | 1980-10-29 | Semiconductor storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5778695A (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1214607B (it) * | 1985-05-14 | 1990-01-18 | Ates Componenti Elettron | Circuito di precarica per linee di riga di un sistema di memoria, in particolare a celle programmabili. |
| JPH07105144B2 (ja) * | 1985-05-20 | 1995-11-13 | 富士通株式会社 | 半導体記憶回路 |
| JPS62232795A (ja) * | 1986-04-02 | 1987-10-13 | Mitsubishi Electric Corp | Mos型メモリ回路 |
| KR940002859B1 (ko) * | 1991-03-14 | 1994-04-04 | 삼성전자 주식회사 | 반도체 메모리장치에서의 워드라인 구동회로 |
| JP5221323B2 (ja) * | 2008-12-25 | 2013-06-26 | 株式会社東芝 | 半導体記憶装置 |
-
1980
- 1980-10-29 JP JP55151935A patent/JPS5778695A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5778695A (en) | 1982-05-17 |
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