JPS6141076B2 - - Google Patents

Info

Publication number: JPS6141076B2
Authority: JP; Japan
Prior art keywords: transistor; voltage; field effect; memory; effect transistor
Prior art date: 1979-03-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP3444179A

Other languages

English (en)

Japanese (ja)

Other versions

JPS55129995A (en

Inventor

Shinji Shimizu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-03-26

Filing date

1979-03-26

Publication date

1986-09-12

1979-03-26 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1979-03-26 Priority to JP3444179A priority Critical patent/JPS55129995A/ja

1980-10-08 Publication of JPS55129995A publication Critical patent/JPS55129995A/ja

1986-09-12 Publication of JPS6141076B2 publication Critical patent/JPS6141076B2/ja

Status Granted legal-status Critical Current

Links

230000015654 memory Effects 0.000 claims description 54
230000005669 field effect Effects 0.000 claims description 12
238000003860 storage Methods 0.000 claims description 10
239000000758 substrate Substances 0.000 claims description 10
230000006870 function Effects 0.000 claims description 4
239000000463 material Substances 0.000 claims description 4
230000001105 regulatory effect Effects 0.000 claims description 3
239000012212 insulator Substances 0.000 claims 4
239000007772 electrode material Substances 0.000 claims 2
230000003071 parasitic effect Effects 0.000 description 12
239000000872 buffer Substances 0.000 description 9
238000010586 diagram Methods 0.000 description 8
230000000694 effects Effects 0.000 description 8
238000004519 manufacturing process Methods 0.000 description 6
239000011159 matrix material Substances 0.000 description 4
239000004065 semiconductor Substances 0.000 description 4
230000002093 peripheral effect Effects 0.000 description 3
230000008859 change Effects 0.000 description 2
230000000295 complement effect Effects 0.000 description 2
230000007423 decrease Effects 0.000 description 2
238000009826 distribution Methods 0.000 description 2
239000002784 hot electron Substances 0.000 description 2
230000007257 malfunction Effects 0.000 description 2
239000002184 metal Substances 0.000 description 2
229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
230000002411 adverse Effects 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
230000006378 damage Effects 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
239000011521 glass Substances 0.000 description 1
230000010354 integration Effects 0.000 description 1
230000001678 irradiating effect Effects 0.000 description 1
238000012886 linear function Methods 0.000 description 1
238000000034 method Methods 0.000 description 1
230000008569 process Effects 0.000 description 1
230000009467 reduction Effects 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Read Only Memory (AREA)

JP3444179A 1979-03-26 1979-03-26 Insulating gate field effect transistor memory Granted JPS55129995A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP3444179A JPS55129995A (en)	1979-03-26	1979-03-26	Insulating gate field effect transistor memory

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP3444179A JPS55129995A (en)	1979-03-26	1979-03-26	Insulating gate field effect transistor memory

Related Child Applications (1)

Application Number	Title	Priority Date	Filing Date
JP62177006A Division JPS6323298A (ja)	1987-07-17	1987-07-17	絶縁ゲ−ト電界効果トランジスタ・メモリ

Publications (2)

Publication Number	Publication Date
JPS55129995A JPS55129995A (en)	1980-10-08
JPS6141076B2 true JPS6141076B2 (fr)	1986-09-12

Family

ID=12414312

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP3444179A Granted JPS55129995A (en)	1979-03-26	1979-03-26	Insulating gate field effect transistor memory

Country Status (1)

Country	Link
JP (1)	JPS55129995A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS58165800U (ja) *	1982-04-28	1983-11-04	日本電気株式会社	Ｅｐｒｏｍ書込み回路

1979
- 1979-03-26 JP JP3444179A patent/JPS55129995A/ja active Granted

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
THE TRANSACTIONS OF IECE OF JAPAN=1979 *

Also Published As

Publication number	Publication date
JPS55129995A (en)	1980-10-08

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