JPS6148276B2 - - Google Patents

Info

Publication number
JPS6148276B2
JPS6148276B2 JP55171375A JP17137580A JPS6148276B2 JP S6148276 B2 JPS6148276 B2 JP S6148276B2 JP 55171375 A JP55171375 A JP 55171375A JP 17137580 A JP17137580 A JP 17137580A JP S6148276 B2 JPS6148276 B2 JP S6148276B2
Authority
JP
Japan
Prior art keywords
amorphous silicon
type
silane
layer
photoelectric device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55171375A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5795677A (en
Inventor
Yoshihiro Hamakawa
Yoshihisa Oowada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP55171375A priority Critical patent/JPS5795677A/ja
Priority to US06/253,141 priority patent/US4385199A/en
Priority to CA000391378A priority patent/CA1176740A/fr
Priority to AT81110111T priority patent/ATE38296T1/de
Priority to AU78224/81A priority patent/AU558650B2/en
Priority to DE8181110111T priority patent/DE3176919D1/de
Priority to MX81190403A priority patent/MX157367A/es
Priority to EP81110111A priority patent/EP0053402B1/fr
Publication of JPS5795677A publication Critical patent/JPS5795677A/ja
Priority to US06/420,711 priority patent/US4385200A/en
Publication of JPS6148276B2 publication Critical patent/JPS6148276B2/ja
Priority to AU65542/86A priority patent/AU588400B2/en
Priority to SG65589A priority patent/SG65589G/en
Priority to HK796/89A priority patent/HK79689A/xx
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP55171375A 1980-02-04 1980-12-03 Amorphous silicon type photoelectric tranducer Granted JPS5795677A (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP55171375A JPS5795677A (en) 1980-12-03 1980-12-03 Amorphous silicon type photoelectric tranducer
US06/253,141 US4385199A (en) 1980-12-03 1981-04-10 Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
CA000391378A CA1176740A (fr) 1980-12-03 1981-12-02 Cellule photovoltaique a haute tension ayant une heterojonction de semiconducteur amorphe et de silicium amorphe
EP81110111A EP0053402B1 (fr) 1980-12-03 1981-12-03 Cellule photovoltaique pin à hétéro-jonction entre un composé de silicium amorpheet du silicium amorphe
AU78224/81A AU558650B2 (en) 1980-12-03 1981-12-03 Amorphous semiconductor high-voltage photovoltaic cell
DE8181110111T DE3176919D1 (en) 1980-12-03 1981-12-03 Pin photovoltaic cell having a hetero junction of amorphous siliconcompound and amorphous silicon
MX81190403A MX157367A (es) 1980-02-04 1981-12-03 Mejoras a celda fotovoltaica de tipo de silicio amorfo p-i-n
AT81110111T ATE38296T1 (de) 1980-12-03 1981-12-03 Photovolteische zelle vom pin-typ mit heterouebergang zwischen einer amorphen siliziumverbindung und amorphem silizium.
US06/420,711 US4385200A (en) 1980-12-03 1982-09-21 Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
AU65542/86A AU588400B2 (en) 1980-12-03 1986-11-20 High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon
SG65589A SG65589G (en) 1980-12-03 1989-09-20 Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon
HK796/89A HK79689A (en) 1980-12-03 1989-10-05 Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55171375A JPS5795677A (en) 1980-12-03 1980-12-03 Amorphous silicon type photoelectric tranducer

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP58044689A Division JPS58190072A (ja) 1983-03-16 1983-03-16 アモルフアスシリコン系光電素子
JP58044688A Division JPS58190810A (ja) 1983-03-16 1983-03-16 Ｐ型アモルフアスシリコンカ−バイドの製造方法
JP3341477A Division JPH05343714A (ja) 1991-12-24 1991-12-24 アモルフアスシリコン系光電素子の製造方法
JP4113635A Division JP2530408B2 (ja) 1992-05-06 1992-05-06 アモルフアスシリコン系光電素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5795677A JPS5795677A (en) 1982-06-14
JPS6148276B2 true JPS6148276B2 (fr) 1986-10-23

Family

ID=15922010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55171375A Granted JPS5795677A (en) 1980-02-04 1980-12-03 Amorphous silicon type photoelectric tranducer

Country Status (2)

Country Link
JP (1) JPS5795677A (fr)
AU (1) AU588400B2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62268128A (ja) * 1986-05-15 1987-11-20 Sharp Corp 微結晶炭化珪素膜の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS5337718A (en) * 1976-09-21 1978-04-07 Asahi Glass Co Ltd Laminated glass with heating wire incorporated therein
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
US4167015A (en) * 1978-04-24 1979-09-04 Rca Corporation Cermet layer for amorphous silicon solar cells
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
JPS5568681A (en) * 1978-11-17 1980-05-23 Yoshihiro Hamakawa Amorphous silicon solar battery and fabricating the same
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device
JPS55127080A (en) * 1979-03-26 1980-10-01 Matsushita Electric Ind Co Ltd Photoconductive element
DE3032158A1 (de) * 1979-08-30 1981-04-02 Plessey Overseas Ltd., Ilford, Essex Solarzelle
JPS56125881A (en) * 1980-03-06 1981-10-02 Fuji Photo Film Co Ltd Optical semiconductor element
FR2490018B1 (fr) * 1980-09-09 1986-01-17 Energy Conversion Devices Inc Procede et dispositif pour etalonner les intervalles de bande d'alliages semi-conducteurs amorphes et alliages obtenus
US4394426A (en) * 1980-09-25 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(N) barrier layer
JPS5944791A (ja) * 1982-09-07 1984-03-13 株式会社日立ホームテック ワイヤレスプロ−ブを備えた高周波加熱装置

Also Published As

Publication number Publication date
JPS5795677A (en) 1982-06-14
AU6554286A (en) 1987-02-19
AU588400B2 (en) 1989-09-14

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