JPS6156614B2 - - Google Patents

Info

Publication number: JPS6156614B2
Authority: JP; Japan
Prior art keywords: semiconductor substrate; photoresist layer; methyl alcohol; wafer; removal
Prior art date: 1977-09-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP11511277A

Other languages

English (en)

Japanese (ja)

Other versions

JPS5449071A (en

Inventor

Kinnosuke Okutsu

Sakae Sato

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Tokyo Shibaura Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-09-27

Filing date

1977-09-27

Publication date

1986-12-03

1977-09-27 Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd

1977-09-27 Priority to JP11511277A priority Critical patent/JPS5449071A/ja

1979-04-18 Publication of JPS5449071A publication Critical patent/JPS5449071A/ja

1986-12-03 Publication of JPS6156614B2 publication Critical patent/JPS6156614B2/ja

Status Granted legal-status Critical Current

Links

OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 27
239000007788 liquid Substances 0.000 claims description 12
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
238000000034 method Methods 0.000 claims description 9
229920002120 photoresistant polymer Polymers 0.000 claims description 9
239000004065 semiconductor Substances 0.000 claims description 9
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
239000007864 aqueous solution Substances 0.000 claims description 6
238000005406 washing Methods 0.000 claims description 6
239000000203 mixture Substances 0.000 claims description 3
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
239000000758 substrate Substances 0.000 claims 6
238000000151 deposition Methods 0.000 claims 1
238000005507 spraying Methods 0.000 claims 1
238000004140 cleaning Methods 0.000 description 6
239000004094 surface-active agent Substances 0.000 description 5
230000000694 effects Effects 0.000 description 4
239000000243 solution Substances 0.000 description 4
238000001259 photo etching Methods 0.000 description 2
239000000126 substance Substances 0.000 description 2
229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
239000000969 carrier Substances 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
239000000470 constituent Substances 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000004090 dissolution Methods 0.000 description 1
QAOWNCQODCNURD-UHFFFAOYSA-M hydrogensulfate Chemical compound OS([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-M 0.000 description 1
125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000003595 mist Substances 0.000 description 1
239000011259 mixed solution Substances 0.000 description 1
125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
150000002894 organic compounds Chemical class 0.000 description 1
230000000149 penetrating effect Effects 0.000 description 1
-1 polyoxyethylene Polymers 0.000 description 1
230000001737 promoting effect Effects 0.000 description 1
239000007921 spray Substances 0.000 description 1
239000002699 waste material Substances 0.000 description 1

Landscapes

Photosensitive Polymer And Photoresist Processing (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

JP11511277A 1977-09-27 1977-09-27 Processing method by aqueous solution of photo resist layer Granted JPS5449071A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP11511277A JPS5449071A (en)	1977-09-27	1977-09-27	Processing method by aqueous solution of photo resist layer

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP11511277A JPS5449071A (en)	1977-09-27	1977-09-27	Processing method by aqueous solution of photo resist layer

Publications (2)

Publication Number	Publication Date
JPS5449071A JPS5449071A (en)	1979-04-18
JPS6156614B2 true JPS6156614B2 (2)	1986-12-03

Family

ID=14654525

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP11511277A Granted JPS5449071A (en)	1977-09-27	1977-09-27	Processing method by aqueous solution of photo resist layer

Country Status (1)

Country	Link
JP (1)	JPS5449071A (2)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS57173660U (2) *	1981-04-28	1982-11-01
JPS58158440U (ja) *	1982-04-16	1983-10-22	沖電気工業株式会社	ウエハ洗浄装置

1977
- 1977-09-27 JP JP11511277A patent/JPS5449071A/ja active Granted

Also Published As

Publication number	Publication date
JPS5449071A (en)	1979-04-18

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