JPS6187871A - Ion beam deposition method - Google Patents
Ion beam deposition methodInfo
- Publication number
- JPS6187871A JPS6187871A JP19230484A JP19230484A JPS6187871A JP S6187871 A JPS6187871 A JP S6187871A JP 19230484 A JP19230484 A JP 19230484A JP 19230484 A JP19230484 A JP 19230484A JP S6187871 A JPS6187871 A JP S6187871A
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- sample
- deposition method
- present
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 6
- 238000007737 ion beam deposition Methods 0.000 title description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 8
- 150000002736 metal compounds Chemical class 0.000 claims description 8
- 150000002902 organometallic compounds Chemical class 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000003672 processing method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 241000534672 Hiodon alosoides Species 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はイオン・ビーム加工法に係り、イオン・ビーム
による金属膜形成法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an ion beam processing method, and more particularly to a method for forming a metal film using an ion beam.
従来、イオン・ビーム加工処理あるいは電子ビーム加工
処理は、主としてＵ光あるいはエツチング処理に用いら
れているのが通例であった。Conventionally, ion beam processing or electron beam processing has typically been used primarily for U light or etching processing.
本発明は、かかる従来技術におけるイオン・ビーム処理
法において、ビーム状に金ｍ膜を形成する処理法が無い
と云う問題点があった。The present invention has a problem in that there is no processing method for forming a gold film in the form of a beam in the conventional ion beam processing method.
本発明は、かかる従来技術の問題点を解決するために、
イオン・ビーム・デボクシ１ン法に於いて有機金属化合
物または金属化合物雰囲気に電子ビームまたはイオン・
ビームを照射し、試料表面に有機金属化合物の構成元素
金属または合金をビーム状にデボジシｌンする事を特徴
とする手段を提供する。In order to solve the problems of the prior art, the present invention has the following features:
In the ion beam deboxing method, an electron beam or ion beam is applied to an organometallic compound or metal compound atmosphere.
The present invention provides a means for depositing constituent metals or alloys of an organometallic compound onto the surface of a sample in the form of a beam by irradiating the sample with a beam.
本発明は、試料表面に有機金属化合物または金属化合物
雰囲気を現出し、該有機金属化合物または金属化合物雰
囲気に電子ビームまたはイオン・ビーム等のエネルギー
・ビームを走査しながら照射することにより、前記有機
金属化合物または金属化合物を分解し、構成元素である
金属元素をイオン化しビーム状をなすと共に、該金属ま
たは合金を膜状に且つビーム状に試料表面にデポジショ
ンする。The present invention exposes an organometallic compound or a metal compound atmosphere on the surface of a sample, and irradiates the organometallic compound or metal compound atmosphere with an energy beam such as an electron beam or an ion beam while scanning. The compound or metal compound is decomposed, the constituent metal elements are ionized into a beam shape, and the metal or alloy is deposited on the sample surface in the form of a film and beam.
第１図は、本発明の一実施例を示すイオン・ビーム・デ
ポジション法の模式図である。今、真空容器内にある試
料台１上には試料２が設置され、該試料２の表面にはノ
ズル３からの金属化合物ガス４が供給され、試料２の表
面には電子ビームまたはＡにイオン・ビーム５が照射さ
れて、金目膜６が形成されて成る。FIG. 1 is a schematic diagram of an ion beam deposition method showing one embodiment of the present invention. Now, a sample 2 is placed on a sample stage 1 in a vacuum container, a metal compound gas 4 is supplied from a nozzle 3 to the surface of the sample 2, and the surface of the sample 2 is exposed to electron beams or ion beams A. - The beam 5 is irradiated to form a gold eye film 6.
有機金属化合物としては（Ｃ＊ ”ｓ ）４３ ｎ ＊
（ＯＨｓ）ｔ Ａ １０ ｔ Ｉ （ａ
！ｎ、）３ｓｂ、 （ＯｘＨ＠）、Ｚｎ等が有り、各
々Ｓｎ、Ａｌ、Ｓｂ。As an organometallic compound, (C*”s)43n*
(OHs) t A 10 t I (a
! n, )3sb, (OxH@), Zn, etc., each containing Sn, Al, and Sb.
Ｚｎ等の金属をデポジションすることができる。Metals such as Zn can be deposited.
本発明を合金膜形成に用いられることは云うまでもない
。金属化合物としてはｈａＱＬ、、Ｍｏ０Ｌ１、ＳｎＢ
ｒ４等があり、それぞれｈｅ、Ｍｏ。It goes without saying that the present invention can be used to form alloy films. Metal compounds include haQL, Mo0L1, SnB
There are r4, etc., he and Mo respectively.
Ｓｎ等の金属をデポジションすることができる。Metals such as Sn can be deposited.
本発明によりα１μ程度の極めて細いビーム状に金属膜
または合金膜を試料上に直接形成出来る効果がある。The present invention has the advantage that a metal film or alloy film can be directly formed on a sample in the form of an extremely narrow beam of approximately α1μ.
第１図は本発明の一実施例を示すイオン・ビーム・デポ
ジション法の模式図である。
１・・・・・・試料台
２・・・・・・試料
５・・・・・・ノズル
４・・・・・・有機金属化合物ガス
５・・・・・・イオン・ビーム
６・・・・・・金属膜
以 上FIG. 1 is a schematic diagram of an ion beam deposition method showing an embodiment of the present invention. 1... Sample stage 2... Sample 5... Nozzle 4... Organometallic compound gas 5... Ion beam 6... ...More than metal film
Claims (1)
ムまたはイオン・ビームを照射し、試料表面に有機金属
化合物または金属化合物の構成元素金属または合金をビ
ーム状にデポジションする事を特徴とするイオン・ビー
ム・デポジション法。An ion beam method characterized by irradiating an organometallic compound or a metal compound atmosphere with an electron beam or an ion beam to deposit constituent metals or alloys of the organometallic compound or metal compound on the sample surface in the form of a beam. Deposition method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19230484A JPS6187871A (en) | 1984-09-13 | 1984-09-13 | Ion beam deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19230484A JPS6187871A (en) | 1984-09-13 | 1984-09-13 | Ion beam deposition method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6187871A true JPS6187871A (en) | 1986-05-06 |
Family
ID=16289043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19230484A Pending JPS6187871A (en) | 1984-09-13 | 1984-09-13 | Ion beam deposition method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6187871A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0483517A3 (en) * | 1990-10-29 | 1992-05-27 | International Business Machines Corporation | Gas delivery for ion beam deposition and etching |
| US5514477A (en) * | 1992-09-11 | 1996-05-07 | Hitachi, Ltd. | Corrosion-resistant laminate which consists of a metal of a single mass number deposited on a substrate |
| US8872615B2 (en) | 2010-05-28 | 2014-10-28 | Institute Of Geological And Nuclear Sciences Limited | Magnetic nanoclusters |
-
1984
- 1984-09-13 JP JP19230484A patent/JPS6187871A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0483517A3 (en) * | 1990-10-29 | 1992-05-27 | International Business Machines Corporation | Gas delivery for ion beam deposition and etching |
| US5514477A (en) * | 1992-09-11 | 1996-05-07 | Hitachi, Ltd. | Corrosion-resistant laminate which consists of a metal of a single mass number deposited on a substrate |
| US8872615B2 (en) | 2010-05-28 | 2014-10-28 | Institute Of Geological And Nuclear Sciences Limited | Magnetic nanoclusters |
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