JPS6190862U - - Google Patents

Info

Publication number
JPS6190862U
JPS6190862U JP17405284U JP17405284U JPS6190862U JP S6190862 U JPS6190862 U JP S6190862U JP 17405284 U JP17405284 U JP 17405284U JP 17405284 U JP17405284 U JP 17405284U JP S6190862 U JPS6190862 U JP S6190862U
Authority
JP
Japan
Prior art keywords
substrate surface
vapor growth
commutator
flow path
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17405284U
Other languages
English (en)
Other versions
JPH0329333Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1984174052U priority Critical patent/JPH0329333Y2/ja
Publication of JPS6190862U publication Critical patent/JPS6190862U/ja
Application granted granted Critical
Publication of JPH0329333Y2 publication Critical patent/JPH0329333Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【図面の簡単な説明】
第１図は本考案の気相成長装置の一実施例を示
す断面図、第２図イ，ロ，ハは本考案に用いられ
る整流子の夫々異なる実施例を示す斜視図、第３
図は従来の気相成長装置の断面図である。 １…反応管、２…処理ガス導入管、３…高周波
加熱コイル、４…サセプタ、５…基板、１０，１
０Ａ，１０Ｂ…整流子、１１…操作棒、１２…鋭
角部。

Claims (1)

    【実用新案登録請求の範囲】
  1. 基板面に垂直に気相成長ガスを吹き付けて該基
    板面上に成膜する気相成長装置において、気相成
    長ガス流路の前記基板面より上流に整流子を設け
    たことを特徴とする気相成長装置。
JP1984174052U 1984-11-16 1984-11-16 Expired JPH0329333Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1984174052U JPH0329333Y2 (ja) 1984-11-16 1984-11-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984174052U JPH0329333Y2 (ja) 1984-11-16 1984-11-16

Publications (2)

Publication Number Publication Date
JPS6190862U true JPS6190862U (ja) 1986-06-12
JPH0329333Y2 JPH0329333Y2 (ja) 1991-06-21

Family

ID=30731682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984174052U Expired JPH0329333Y2 (ja) 1984-11-16 1984-11-16

Country Status (1)

Country Link
JP (1) JPH0329333Y2 (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136590A (ja) * 1974-09-24 1976-03-27 Fujitsu Ten Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136590A (ja) * 1974-09-24 1976-03-27 Fujitsu Ten Ltd

Also Published As

Publication number Publication date
JPH0329333Y2 (ja) 1991-06-21

Similar Documents

Publication Publication Date Title
JPS6190862U (ja)
JPS62203023U (ja)
JPH0320434U (ja)
JPH0273737U (ja)
JPS62170627U (ja)
JPS59103772U (ja) 薄膜気相成長装置
JPS61147275U (ja)
JPS6139937U (ja) 拡散炉型気相成長装置
JPH01129260U (ja)
JPH0245627U (ja)
JPH01100432U (ja)
JPS5885336U (ja) 半導体気相成長装置
JPS60147676U (ja) 気相成長装置
JPS6169282U (ja)
JPH0229521U (ja)
JPH0468519U (ja)
JPS61100133U (ja)
JPH0265335U (ja)
JPH01129259U (ja)
JPH0343730U (ja)
JPH0227724U (ja)
JPH0455132U (ja)
JPS6225160U (ja)
JPS60146335U (ja) 気相反応成長装置
JPS60185331U (ja) 気相成長装置