JPS62130553A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS62130553A
JPS62130553A JP60271062A JP27106285A JPS62130553A JP S62130553 A JPS62130553 A JP S62130553A JP 60271062 A JP60271062 A JP 60271062A JP 27106285 A JP27106285 A JP 27106285A JP S62130553 A JPS62130553 A JP S62130553A
Authority
JP
Japan
Prior art keywords
type
transistor
region
integrated circuit
metal wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60271062A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0587023B2 (2
Inventor
Tsunehiro Koyama
恒弘 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60271062A priority Critical patent/JPS62130553A/ja
Priority to US06/937,119 priority patent/US4860065A/en
Priority to DE19863641133 priority patent/DE3641133A1/de
Publication of JPS62130553A publication Critical patent/JPS62130553A/ja
Publication of JPH0587023B2 publication Critical patent/JPH0587023B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
JP60271062A 1985-12-02 1985-12-02 半導体集積回路装置 Granted JPS62130553A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60271062A JPS62130553A (ja) 1985-12-02 1985-12-02 半導体集積回路装置
US06/937,119 US4860065A (en) 1985-12-02 1986-12-02 Semiconductor integrated circuit device
DE19863641133 DE3641133A1 (de) 1985-12-02 1986-12-02 Integrierte halbleiterschaltungseinrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60271062A JPS62130553A (ja) 1985-12-02 1985-12-02 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS62130553A true JPS62130553A (ja) 1987-06-12
JPH0587023B2 JPH0587023B2 (2) 1993-12-15

Family

ID=17494866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60271062A Granted JPS62130553A (ja) 1985-12-02 1985-12-02 半導体集積回路装置

Country Status (3)

Country Link
US (1) US4860065A (2)
JP (1) JPS62130553A (2)
DE (1) DE3641133A1 (2)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5283480A (en) * 1988-04-02 1994-02-01 Hitachi, Ltd. Semiconductor integrated circuit device with a plurality of logic circuits having active pull-down functions
KR890016669A (ko) * 1988-04-02 1989-11-29 미다 가쓰시게 반도체 집적회로
US5583348A (en) * 1991-12-03 1996-12-10 Motorola, Inc. Method for making a schottky diode that is compatible with high performance transistor structures
US6177825B1 (en) * 1999-03-31 2001-01-23 Sony Corporation Fast high side switch for hard disk drive preamplifiers

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7806989A (nl) * 1978-06-29 1980-01-03 Philips Nv Geintegreerde schakeling.
EP0029350B1 (en) * 1979-11-14 1987-08-05 Fujitsu Limited An output transistor of a ttl device with a means for discharging carriers
US4628339A (en) * 1981-02-11 1986-12-09 Fairchild Camera & Instr. Corp. Polycrystalline silicon Schottky diode array
US4584594A (en) * 1981-05-08 1986-04-22 Fairchild Camera & Instrument Corp. Logic structure utilizing polycrystalline silicon Schottky diodes
JPS60143496A (ja) * 1983-12-29 1985-07-29 Fujitsu Ltd 半導体記憶装置
US4730126A (en) * 1986-08-27 1988-03-08 Advanced Micro Devices, Inc. Temperature compensated high performance hysteresis buffer

Also Published As

Publication number Publication date
DE3641133C2 (2) 1988-11-10
DE3641133A1 (de) 1987-06-04
JPH0587023B2 (2) 1993-12-15
US4860065A (en) 1989-08-22

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