JPS621359B2 - - Google Patents

Info

Publication number
JPS621359B2
JPS621359B2 JP56190285A JP19028581A JPS621359B2 JP S621359 B2 JPS621359 B2 JP S621359B2 JP 56190285 A JP56190285 A JP 56190285A JP 19028581 A JP19028581 A JP 19028581A JP S621359 B2 JPS621359 B2 JP S621359B2
Authority
JP
Japan
Prior art keywords
shutter
reactor
liquid phase
epitaxial growth
phase epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56190285A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5891099A (ja
Inventor
Kazuo Hiura
Mikio Tanabe
Tatsuhiko Kokado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Kokusai Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Co Ltd filed Critical Kokusai Electric Co Ltd
Priority to JP56190285A priority Critical patent/JPS5891099A/ja
Publication of JPS5891099A publication Critical patent/JPS5891099A/ja
Publication of JPS621359B2 publication Critical patent/JPS621359B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/062—Vertical dipping system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP56190285A 1981-11-27 1981-11-27 縦型液相エピタキシヤル成長装置 Granted JPS5891099A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56190285A JPS5891099A (ja) 1981-11-27 1981-11-27 縦型液相エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56190285A JPS5891099A (ja) 1981-11-27 1981-11-27 縦型液相エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS5891099A JPS5891099A (ja) 1983-05-30
JPS621359B2 true JPS621359B2 (th) 1987-01-13

Family

ID=16255621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56190285A Granted JPS5891099A (ja) 1981-11-27 1981-11-27 縦型液相エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS5891099A (th)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115271A (ja) * 1983-11-28 1985-06-21 Showa Denko Kk リン化ガリウム赤色発光素子の製造方法
JP5115413B2 (ja) * 2008-09-09 2013-01-09 トヨタ自動車株式会社 炭化珪素単結晶の製造装置および製造方法

Also Published As

Publication number Publication date
JPS5891099A (ja) 1983-05-30

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