JPS62190716A - 半導体薄膜結晶層の製造方法 - Google Patents

半導体薄膜結晶層の製造方法

Info

Publication number
JPS62190716A
JPS62190716A JP61031792A JP3179286A JPS62190716A JP S62190716 A JPS62190716 A JP S62190716A JP 61031792 A JP61031792 A JP 61031792A JP 3179286 A JP3179286 A JP 3179286A JP S62190716 A JPS62190716 A JP S62190716A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
crystal layer
region
annealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61031792A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0354849B2 (cs
Inventor
Iwao Higashinakagaha
東中川　巌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61031792A priority Critical patent/JPS62190716A/ja
Publication of JPS62190716A publication Critical patent/JPS62190716A/ja
Publication of JPH0354849B2 publication Critical patent/JPH0354849B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
JP61031792A 1986-02-18 1986-02-18 半導体薄膜結晶層の製造方法 Granted JPS62190716A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61031792A JPS62190716A (ja) 1986-02-18 1986-02-18 半導体薄膜結晶層の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61031792A JPS62190716A (ja) 1986-02-18 1986-02-18 半導体薄膜結晶層の製造方法

Publications (2)

Publication Number Publication Date
JPS62190716A true JPS62190716A (ja) 1987-08-20
JPH0354849B2 JPH0354849B2 (cs) 1991-08-21

Family

ID=12340919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61031792A Granted JPS62190716A (ja) 1986-02-18 1986-02-18 半導体薄膜結晶層の製造方法

Country Status (1)

Country Link
JP (1) JPS62190716A (cs)

Also Published As

Publication number Publication date
JPH0354849B2 (cs) 1991-08-21

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Legal Events

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EXPY Cancellation because of completion of term