JPS62273731A - プラズマ処理装置 - Google Patents

プラズマ処理装置

Info

Publication number
JPS62273731A
JPS62273731A JP61116997A JP11699786A JPS62273731A JP S62273731 A JPS62273731 A JP S62273731A JP 61116997 A JP61116997 A JP 61116997A JP 11699786 A JP11699786 A JP 11699786A JP S62273731 A JPS62273731 A JP S62273731A
Authority
JP
Japan
Prior art keywords
plasma
plasma generating
substrate
electrode
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61116997A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0551172B2 (fr
Inventor
Shinji Kubota
紳治 久保田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TERU RAMU KK
Tokyo Electron Ltd
Original Assignee
TERU RAMU KK
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TERU RAMU KK, Tokyo Electron Ltd filed Critical TERU RAMU KK
Priority to JP61116997A priority Critical patent/JPS62273731A/ja
Publication of JPS62273731A publication Critical patent/JPS62273731A/ja
Publication of JPH0551172B2 publication Critical patent/JPH0551172B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP61116997A 1986-05-21 1986-05-21 プラズマ処理装置 Granted JPS62273731A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61116997A JPS62273731A (ja) 1986-05-21 1986-05-21 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61116997A JPS62273731A (ja) 1986-05-21 1986-05-21 プラズマ処理装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP6257978A Division JP2657170B2 (ja) 1994-10-24 1994-10-24 プラズマ処理装置
JP6257979A Division JPH07176399A (ja) 1994-10-24 1994-10-24 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS62273731A true JPS62273731A (ja) 1987-11-27
JPH0551172B2 JPH0551172B2 (fr) 1993-07-30

Family

ID=14700913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61116997A Granted JPS62273731A (ja) 1986-05-21 1986-05-21 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS62273731A (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02224239A (ja) * 1988-05-23 1990-09-06 Nippon Telegr & Teleph Corp <Ntt> プラズマエッチング装置
US5332880A (en) * 1992-03-31 1994-07-26 Matsushita Electric Industrial Co., Ltd. Method and apparatus for generating highly dense uniform plasma by use of a high frequency rotating electric field
US5424905A (en) * 1992-03-31 1995-06-13 Matsushita Electric Company, Ltd. Plasma generating method and apparatus
JPH07176399A (ja) * 1994-10-24 1995-07-14 Tokyo Electron Ltd プラズマ処理装置
US5593539A (en) * 1990-12-14 1997-01-14 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
US5609690A (en) * 1994-02-15 1997-03-11 Matsushita Electric Industrial Co., Ltd. Vacuum plasma processing apparatus and method
WO2004064460A1 (fr) * 2003-01-16 2004-07-29 Japan Science And Technology Agency Dispositif d'alimentation electrique haute frequence et generateur de plasma
US6779482B2 (en) * 2000-03-23 2004-08-24 Sharp Kabushiki Kaisha Plasma deposition device for forming thin film
WO2020054005A1 (fr) * 2018-09-13 2020-03-19 株式会社日立国際電気 Dispositif d'alimentation électrique haute fréquence et dispositif de traitement de substrat

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104468A (ja) * 1982-12-07 1984-06-16 Canon Inc プラズマｃｖｄによる堆積膜の形成法
JPS59147432A (ja) * 1983-02-10 1984-08-23 Fujitsu Ltd エツチング処理装置
JPS6024376A (ja) * 1983-07-21 1985-02-07 Canon Inc プラズマｃｖｄ装置
JPS60153129A (ja) * 1984-01-20 1985-08-12 Seiko Instr & Electronics Ltd 半導体装置の製造方法
JPS6244576A (ja) * 1984-09-14 1987-02-26 Anelva Corp 多電極放電反応処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104468A (ja) * 1982-12-07 1984-06-16 Canon Inc プラズマｃｖｄによる堆積膜の形成法
JPS59147432A (ja) * 1983-02-10 1984-08-23 Fujitsu Ltd エツチング処理装置
JPS6024376A (ja) * 1983-07-21 1985-02-07 Canon Inc プラズマｃｖｄ装置
JPS60153129A (ja) * 1984-01-20 1985-08-12 Seiko Instr & Electronics Ltd 半導体装置の製造方法
JPS6244576A (ja) * 1984-09-14 1987-02-26 Anelva Corp 多電極放電反応処理装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02224239A (ja) * 1988-05-23 1990-09-06 Nippon Telegr & Teleph Corp <Ntt> プラズマエッチング装置
US5593539A (en) * 1990-12-14 1997-01-14 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
US5332880A (en) * 1992-03-31 1994-07-26 Matsushita Electric Industrial Co., Ltd. Method and apparatus for generating highly dense uniform plasma by use of a high frequency rotating electric field
US5424905A (en) * 1992-03-31 1995-06-13 Matsushita Electric Company, Ltd. Plasma generating method and apparatus
US5609690A (en) * 1994-02-15 1997-03-11 Matsushita Electric Industrial Co., Ltd. Vacuum plasma processing apparatus and method
JPH07176399A (ja) * 1994-10-24 1995-07-14 Tokyo Electron Ltd プラズマ処理装置
US6779482B2 (en) * 2000-03-23 2004-08-24 Sharp Kabushiki Kaisha Plasma deposition device for forming thin film
WO2004064460A1 (fr) * 2003-01-16 2004-07-29 Japan Science And Technology Agency Dispositif d'alimentation electrique haute frequence et generateur de plasma
US7567037B2 (en) 2003-01-16 2009-07-28 Japan Science And Technology Agency High frequency power supply device and plasma generator
JP2010157511A (ja) * 2003-01-16 2010-07-15 Japan Science & Technology Agency 高周波電力供給装置およびプラズマ発生装置
WO2020054005A1 (fr) * 2018-09-13 2020-03-19 株式会社日立国際電気 Dispositif d'alimentation électrique haute fréquence et dispositif de traitement de substrat
JPWO2020054005A1 (ja) * 2018-09-13 2021-05-20 株式会社日立国際電気 高周波電源装置および基板処理装置
US11901159B2 (en) 2018-09-13 2024-02-13 Hitachi Kokusai Electric Inc. RF generator device and substrate processing apparatus

Also Published As

Publication number Publication date
JPH0551172B2 (fr) 1993-07-30

Similar Documents

Publication Publication Date Title
JPH07176399A (ja) プラズマ処理装置
KR0148086B1 (ko) 진공플라즈마처리장치
JP2657170B2 (ja) プラズマ処理装置
JP2748886B2 (ja) プラズマ処理装置
US6664737B1 (en) Dielectric barrier discharge apparatus and process for treating a substrate
KR102099408B1 (ko) 플라즈마 에칭 방법 및 플라즈마 에칭 장치
JPH08107101A (ja) プラズマ処理装置及びプラズマ処理方法
KR20020028882A (ko) 금속막의 제작방법 및 그 제작장치
TW201611080A (zh) 電漿處理方法及電漿處理裝置
JPH11260596A (ja) プラズマ処理装置及びプラズマ処理方法
JP2749630B2 (ja) プラズマ表面処理法
JPH02159027A (ja) プラズマ処理装置
JPH0551172B2 (fr)
JPH0613196A (ja) プラズマ発生方法および発生装置
JPH11288798A (ja) プラズマ生成装置
JPS62290885A (ja) 反応性イオンエツチング装置
JP2004186532A (ja) プラズマ処理装置
JPS60123032A (ja) プラズマ処理方法および装置
US5424905A (en) Plasma generating method and apparatus
JPH0682635B2 (ja) 半導体処理装置
JP2851765B2 (ja) プラズマ発生方法およびその装置
JP2812477B2 (ja) 半導体処理装置
JPS5943880A (ja) ドライエツチング装置
KR20110123065A (ko) 펄스 직류 전원을 이용한 플라즈마 처리장치
JP4576011B2 (ja) プラズマ処理装置

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term