JPS6233683B2 - - Google Patents

Info

Publication number
JPS6233683B2
JPS6233683B2 JP56064152A JP6415281A JPS6233683B2 JP S6233683 B2 JPS6233683 B2 JP S6233683B2 JP 56064152 A JP56064152 A JP 56064152A JP 6415281 A JP6415281 A JP 6415281A JP S6233683 B2 JPS6233683 B2 JP S6233683B2
Authority
JP
Japan
Prior art keywords
silicon carbide
sintered body
dielectric constant
insulating material
low dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56064152A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57180005A (en
Inventor
Kunihiro Maeda
Tadahiko Mitsuyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56064152A priority Critical patent/JPS57180005A/ja
Priority to KR1019820001786A priority patent/KR840000049A/ko
Priority to DE8282302184T priority patent/DE3274972D1/de
Priority to EP82302184A priority patent/EP0064386B1/en
Priority to US06/373,261 priority patent/US4544642A/en
Publication of JPS57180005A publication Critical patent/JPS57180005A/ja
Publication of JPS6233683B2 publication Critical patent/JPS6233683B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12576—Boride, carbide or nitride component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Inorganic Insulating Materials (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP56064152A 1981-04-30 1981-04-30 Silicon carbide electric insulator with low dielectric constant Granted JPS57180005A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56064152A JPS57180005A (en) 1981-04-30 1981-04-30 Silicon carbide electric insulator with low dielectric constant
KR1019820001786A KR840000049A (ko) 1981-04-30 1982-04-12 유전율(誘電率)이 낮은 탄화규소전기절연재 및 그 제법
DE8282302184T DE3274972D1 (en) 1981-04-30 1982-04-28 Silicon carbide electrical insulator material of low dielectric constant and manufacturing method therefor
EP82302184A EP0064386B1 (en) 1981-04-30 1982-04-28 Silicon carbide electrical insulator material of low dielectric constant and manufacturing method therefor
US06/373,261 US4544642A (en) 1981-04-30 1982-04-29 Silicon carbide electrical insulator material of low dielectric constant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56064152A JPS57180005A (en) 1981-04-30 1981-04-30 Silicon carbide electric insulator with low dielectric constant

Publications (2)

Publication Number Publication Date
JPS57180005A JPS57180005A (en) 1982-11-05
JPS6233683B2 true JPS6233683B2 (2) 1987-07-22

Family

ID=13249807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56064152A Granted JPS57180005A (en) 1981-04-30 1981-04-30 Silicon carbide electric insulator with low dielectric constant

Country Status (5)

Country Link
US (1) US4544642A (2)
EP (1) EP0064386B1 (2)
JP (1) JPS57180005A (2)
KR (1) KR840000049A (2)
DE (1) DE3274972D1 (2)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969473A (ja) * 1982-10-06 1984-04-19 株式会社日立製作所 電気絶縁性焼結材用炭化けい素粉末組成物
US4701427A (en) * 1985-10-17 1987-10-20 Stemcor Corporation Sintered silicon carbide ceramic body of high electrical resistivity
US4775596A (en) * 1987-02-18 1988-10-04 Corning Glass Works Composite substrate for integrated circuits
DE68922572T2 (de) * 1988-10-21 1995-09-07 Honda Motor Co Ltd Mit Siliziumkarbid verstärkter Verbundwerkstoff aus einer Leichtmetallegierung.
JPH1179846A (ja) * 1997-09-01 1999-03-23 Tokai Carbon Co Ltd 炭化珪素成形体
ATE535009T1 (de) 2002-05-08 2011-12-15 Phoseon Technology Inc Hocheffiziente halbleiter-lichtquelle sowie verfahren zu deren verwendung und herstellung
WO2005043954A2 (en) 2003-10-31 2005-05-12 Phoseon Technology, Inc. Series wiring of highly reliable light sources
US7819550B2 (en) 2003-10-31 2010-10-26 Phoseon Technology, Inc. Collection optics for led array with offset hemispherical or faceted surfaces
WO2005091392A1 (en) * 2004-03-18 2005-09-29 Phoseon Technology, Inc. Micro-reflectors on a substrate for high-density led array
US7816638B2 (en) 2004-03-30 2010-10-19 Phoseon Technology, Inc. LED array having array-based LED detectors
WO2005100961A2 (en) 2004-04-19 2005-10-27 Phoseon Technology, Inc. Imaging semiconductor strucutures using solid state illumination
US9281001B2 (en) 2004-11-08 2016-03-08 Phoseon Technology, Inc. Methods and systems relating to light sources for use in industrial processes
US7642527B2 (en) 2005-12-30 2010-01-05 Phoseon Technology, Inc. Multi-attribute light effects for use in curing and other applications involving photoreactions and processing
TWI417984B (zh) 2009-12-10 2013-12-01 沃博提克Ｌｔ太陽公司 自動排序之多方向性直線型處理裝置
US20110315081A1 (en) * 2010-06-25 2011-12-29 Law Kam S Susceptor for plasma processing chamber
US8459276B2 (en) 2011-05-24 2013-06-11 Orbotech LT Solar, LLC. Broken wafer recovery system

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3960577A (en) * 1974-01-08 1976-06-01 General Electric Company Dense polycrystalline silicon carbide
US4023975A (en) * 1975-11-17 1977-05-17 General Electric Company Hot pressed silicon carbide containing beryllium carbide
US4172109A (en) * 1976-11-26 1979-10-23 The Carborundum Company Pressureless sintering beryllium containing silicon carbide powder composition
US4374793A (en) * 1977-01-27 1983-02-22 Kyoto Ceramic Kabushiki Kaisha Method of producing dense sintered silicon carbide body from polycarbosilane
US4209474A (en) * 1977-08-31 1980-06-24 General Electric Company Process for preparing semiconducting silicon carbide sintered body
DE2927226A1 (de) * 1979-07-05 1981-01-08 Kempten Elektroschmelz Gmbh Dichte formkoerper aus polykristallinem beta -siliciumcarbid und verfahren zu ihrer herstellung durch heisspressen
DE3064598D1 (en) * 1979-11-05 1983-09-22 Hitachi Ltd Electrically insulating substrate and a method of making such a substrate

Also Published As

Publication number Publication date
EP0064386A2 (en) 1982-11-10
US4544642A (en) 1985-10-01
DE3274972D1 (en) 1987-02-12
KR840000049A (ko) 1984-01-30
JPS57180005A (en) 1982-11-05
EP0064386B1 (en) 1987-01-07
EP0064386A3 (en) 1984-07-04

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