JPS6234130A - Substrate with transparent conductive film - Google Patents
Substrate with transparent conductive filmInfo
- Publication number
- JPS6234130A JPS6234130A JP17329585A JP17329585A JPS6234130A JP S6234130 A JPS6234130 A JP S6234130A JP 17329585 A JP17329585 A JP 17329585A JP 17329585 A JP17329585 A JP 17329585A JP S6234130 A JPS6234130 A JP S6234130A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- transparent electrode
- film
- conductive film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
挟挫分髭
本発明は、ドツトマトリクス表示型の液晶表示素子用基
板などの透明導電膜付きポリマーフィルム基板に関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a polymer film substrate with a transparent conductive film, such as a substrate for a dot matrix display type liquid crystal display element.
災米ム伎携
ドツトマトリクス型液晶表示装置は、低電力で多くの情
報表示が可能であることがら、ハンドベルトコンピュー
タの表示端末装置などとして注目されている。そして、
近年、この液晶表示装置の基板をポリマーフィルムとし
、小型、軽量化を図るべく鋭意開発が行われている。Dot matrix type liquid crystal display devices are attracting attention as display terminal devices for hand belt computers because they can display a large amount of information with low power consumption. and,
In recent years, efforts have been made to develop liquid crystal display devices using polymer films as substrates to make them smaller and lighter.
しかし、ポリマーフィルム基板は耐熱性が低いことから
、透明導電膜の形成条件に制約を受け、透明導電膜の低
抵抗化が困難である。たとえば、ＩＴＯ薄膜は基板温度
を高くして形成したり、形成後に高温でベーキングする
ことにより低抵抗化することができるが、ポリマーフィ
ルムにこのような高温条件を課することは難しい。However, since polymer film substrates have low heat resistance, there are restrictions on the conditions for forming the transparent conductive film, making it difficult to reduce the resistance of the transparent conductive film. For example, an ITO thin film can be formed at a high substrate temperature or its resistance can be lowered by baking it at a high temperature after formation, but it is difficult to impose such high temperature conditions on a polymer film.
大型ドツトマトリクス表示用の透明電極では配線長が長
くなるため、透明電極の抵抗値が大きいと抵抗分による
電圧降下が生じ、一端のドツトと他端のドツトでは信号
印加電圧に差違が発生して表示ムラが発生する。これは
特に、表示情報密度を上げるために透明電極の幅を狭く
していくと、顕著に現われてくる。Transparent electrodes for large dot matrix displays have long wiring lengths, so if the resistance of the transparent electrode is large, a voltage drop will occur due to the resistance, and a difference will occur in the signal applied voltage between the dots at one end and the dots at the other end. Display unevenness occurs. This becomes especially noticeable when the width of the transparent electrode is narrowed in order to increase the display information density.
見匪勿且虱
本発明は、ポリマーフィルム基板上に形成された透明′
？ｆ１極の電気抵抗を下げることを目的とする。Of course, the present invention is directed to a transparent film formed on a polymer film substrate.
? The purpose is to lower the electrical resistance of the f1 pole.
光ＪＪ１１隨
本発明の透明導電膜付き基板は、ポリマーフィルム基板
上に形成された透明導電膜からなる透明電極の側面に、
該透明電極の厚さの２〜５０倍の幅で金属部が形成され
ていることを特徴とする。Hikari JJ11 The substrate with a transparent conductive film of the present invention has a transparent conductive film formed on a polymer film substrate, and on the side surface of a transparent electrode made of a transparent conductive film,
It is characterized in that the metal portion is formed with a width that is 2 to 50 times the thickness of the transparent electrode.
以下、添付図面に沿って本発明をさらに詳細に説明する
。Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
第１図は、本発明をドツトマトリクス型液晶表示素子用
の基板として応用した実施例を示す断面図である。基板
１１上に、ストライプ状の透明電極１３が形成されてお
り、透明電極１３の両側縁部には金属部１５が形成され
ている。なお、本図および以下の図においては、見易さ
のために透明電極１３の厚さを実際よりも厚く示しであ
る。FIG. 1 is a sectional view showing an embodiment in which the present invention is applied as a substrate for a dot matrix type liquid crystal display element. A striped transparent electrode 13 is formed on the substrate 11, and metal parts 15 are formed on both side edges of the transparent electrode 13. Note that in this figure and the following figures, the thickness of the transparent electrode 13 is shown thicker than it actually is for ease of viewing.
金属部１５の幅ｄは、透明電極の厚さＬの２〜５０倍で
あり、より好ましくは１０〜２０倍である。この幅ｄが
小さすぎると低抵抗効果が十分に得られず、一方、大き
すぎると透明感を損ない好ましくない。The width d of the metal part 15 is 2 to 50 times the thickness L of the transparent electrode, and more preferably 10 to 20 times. If the width d is too small, a sufficient low resistance effect cannot be obtained, while if it is too large, the transparency will be impaired, which is not preferable.
透明電極１３の片方の側縁部のみに金属部を形成しても
よい。The metal portion may be formed only on one side edge of the transparent electrode 13.
透明電極１３は、ＩＴＯなどの透明導電膜をパターンニ
ングすることにより形成することができる。The transparent electrode 13 can be formed by patterning a transparent conductive film such as ITO.
金属部１５は、低抵抗性の金属材料から形成され、たと
えばＣｒ、Ｎｉなどが用いられる。The metal portion 15 is formed from a low-resistance metal material, such as Cr, Ni, or the like.
ポリマーフィルムとしては、ポリエチレンテレフタレー
トなどに代表される一軸延伸などのポリエステルフィル
ム、ポリカーボネートフィルム、ポリサルフォンフィル
ム、ポリエーテルサルフオンフィルムなどが用いられる
。As the polymer film, a uniaxially stretched polyester film such as polyethylene terephthalate, a polycarbonate film, a polysulfone film, a polyether sulfone film, etc. are used.
ポリサルフオンフィルム、ポリエーテルサルフオンフィ
ルムの場合には、表面にエポキシ系ポリマーを２〜１０
μｍコーティングし、その上に透明電極を形成すること
が望ましい。これらフィルムは耐溶剤性がよくないので
、洗浄や配向処理等を考慮して耐溶剤性を改善するため
である。In the case of polysulfon film and polyether sulfon film, 2 to 10% of epoxy polymer is applied to the surface.
It is desirable to perform a μm coating and form a transparent electrode thereon. Since these films do not have good solvent resistance, the purpose is to improve the solvent resistance by taking cleaning, orientation treatment, etc. into consideration.
第２Ａ図および第２Ｂ図は、第１図に示したドツトマト
リクス用基板の製造例を示す図である。ポリマーフィル
ム基板１１に透明導電膜を形成し、通常のドツトマトリ
クス用基板の製造法と同様に、表面洗浄−レシストコー
ティング−パターン露光−現像−エッチングを施すこと
により、第２Ａ図に示すようにパターン状のレジスト１
７に対応して、透明電極１３がパターンニングされる。FIGS. 2A and 2B are diagrams showing an example of manufacturing the dot matrix substrate shown in FIG. 1. A transparent conductive film is formed on the polymer film substrate 11, and surface cleaning, resist coating, pattern exposure, development, and etching are performed in the same manner as in the manufacturing method of a normal dot matrix substrate, as shown in FIG. 2A. Patterned resist 1
7, the transparent electrode 13 is patterned.
第２Ａ図の状態からレジスト１７を除去すれば通常の透
明電極付き基板が得られるのであるが、本発明では、レ
ジストの除去に先立って金属部の形成が行われる。第２
Ａ図に示したようにレジスト１７で被覆されている状態
で電界メッキを施すと、透明電極１３の側面のみに金属
部をメッキすることができる。金属部の幅ｄ、即ちメッ
キ厚は、処理時間、温度等のプロセス条件を制御するこ
とにより調節することができる。ついで、レジスト１７
を除去することにより、第１図に示した透明電極付きポ
リマーフィルム基板が得られる。このように、電界メッ
キ法によって金属部を形成することにより、新たなフォ
トレジストプロセス等を必要とすることなく、簡単な操
作で本発明のポリマーフィルム基板を得ることができる
。If the resist 17 is removed from the state shown in FIG. 2A, a normal substrate with transparent electrodes can be obtained, but in the present invention, the metal portion is formed prior to the removal of the resist. Second
If electroplating is performed while the transparent electrode 13 is coated with the resist 17 as shown in Figure A, only the side surfaces of the transparent electrode 13 can be plated with metal parts. The width d of the metal part, that is, the plating thickness, can be adjusted by controlling process conditions such as treatment time and temperature. Next, resist 17
By removing , the polymer film substrate with transparent electrodes shown in FIG. 1 is obtained. In this manner, by forming the metal portion by electroplating, the polymer film substrate of the present invention can be obtained with a simple operation without requiring a new photoresist process or the like.
ｌ匪列夏来
本発明によれば、ポリマーフィルム上に形成された透明
電極の側面に低抵抗性の金属部を形成することにより、
電極の抵抗を下げて、表示ムラの発生を防止することが
できる。According to the present invention, by forming a low-resistance metal portion on the side surface of a transparent electrode formed on a polymer film,
By lowering the resistance of the electrode, display unevenness can be prevented.
第１図は１本発明の実施例を示す断面図である。 八 第２図および第２Ｂ図は、本発明の透明導電膜 膜付き基板を製造する方法を示す断面図である。 FIG. 1 is a sectional view showing an embodiment of the present invention. Eight FIG. 2 and FIG. 2B show the transparent conductive film of the present invention. FIG. 3 is a cross-sectional view showing a method for manufacturing a substrate with a film.
Claims (1)
らなる透明電極の側面に、該透明電極の厚さの２〜５０
倍の幅で金属部が形成されていることを特徴とする透明
導電膜付き基板。1. On the side surface of a transparent electrode made of a transparent conductive film formed on a polymer film substrate, a layer with a thickness of 2 to 50% of the thickness of the transparent electrode is applied.
A substrate with a transparent conductive film characterized in that a metal part is formed with double the width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17329585A JPS6234130A (en) | 1985-08-08 | 1985-08-08 | Substrate with transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17329585A JPS6234130A (en) | 1985-08-08 | 1985-08-08 | Substrate with transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6234130A true JPS6234130A (en) | 1987-02-14 |
Family
ID=15957793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17329585A Pending JPS6234130A (en) | 1985-08-08 | 1985-08-08 | Substrate with transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6234130A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5502583A (en) * | 1993-05-15 | 1996-03-26 | Nec Corporation | Liquid crystal display device capable of compensating for a positioning error between a drain line and a display electrode |
| JPH10106751A (en) * | 1996-09-30 | 1998-04-24 | Nec Corp | Electrode structure of organic thin film electroluminescent display |
| EP0845696A3 (en) * | 1996-11-28 | 1999-01-07 | Sharp Kabushiki Kaisha | Liquid crystal display element and method of fabricating electrode substrate for use in the liquid crystal display element |
-
1985
- 1985-08-08 JP JP17329585A patent/JPS6234130A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5502583A (en) * | 1993-05-15 | 1996-03-26 | Nec Corporation | Liquid crystal display device capable of compensating for a positioning error between a drain line and a display electrode |
| JPH10106751A (en) * | 1996-09-30 | 1998-04-24 | Nec Corp | Electrode structure of organic thin film electroluminescent display |
| EP0845696A3 (en) * | 1996-11-28 | 1999-01-07 | Sharp Kabushiki Kaisha | Liquid crystal display element and method of fabricating electrode substrate for use in the liquid crystal display element |
| US6008877A (en) * | 1996-11-28 | 1999-12-28 | Sharp Kabushiki Kaisha | Liquid crystal display having multilayered electrodes with a layer adhesive to a substrate formed of indium tin oxide |
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