JPS6243536B2 - - Google Patents

Info

Publication number
JPS6243536B2
JPS6243536B2 JP57126046A JP12604682A JPS6243536B2 JP S6243536 B2 JPS6243536 B2 JP S6243536B2 JP 57126046 A JP57126046 A JP 57126046A JP 12604682 A JP12604682 A JP 12604682A JP S6243536 B2 JPS6243536 B2 JP S6243536B2
Authority
JP
Japan
Prior art keywords
substrate
reaction
silicon
single crystal
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57126046A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5825226A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP57126046A priority Critical patent/JPS5825226A/ja
Publication of JPS5825226A publication Critical patent/JPS5825226A/ja
Publication of JPS6243536B2 publication Critical patent/JPS6243536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Chemical Vapour Deposition (AREA)
JP57126046A 1982-07-19 1982-07-19 プラズマ気相反応装置 Granted JPS5825226A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57126046A JPS5825226A (ja) 1982-07-19 1982-07-19 プラズマ気相反応装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57126046A JPS5825226A (ja) 1982-07-19 1982-07-19 プラズマ気相反応装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP15288778A Division JPS5578524A (en) 1978-12-10 1978-12-10 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5825226A JPS5825226A (ja) 1983-02-15
JPS6243536B2 true JPS6243536B2 (sr) 1987-09-14

Family

ID=14925306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57126046A Granted JPS5825226A (ja) 1982-07-19 1982-07-19 プラズマ気相反応装置

Country Status (1)

Country Link
JP (1) JPS5825226A (sr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6067673A (ja) * 1983-09-22 1985-04-18 Semiconductor Energy Lab Co Ltd プラズマ気相反応方法
EP0151754B1 (en) * 1984-02-14 1991-12-18 Energy Conversion Devices, Inc. An improved method of making a photoconductive member
JPS6183700A (ja) * 1984-09-28 1986-04-28 Hitachi Ltd 気相エピタキシヤル成長方法およびその装置
JPS6289875A (ja) * 1985-10-14 1987-04-24 Semiconductor Energy Lab Co Ltd 薄膜形成装置
JPH069019Y2 (ja) * 1986-10-31 1994-03-09 株式会社島津製作所 Ｃｖｄ装置
JPH0732135B2 (ja) * 1987-10-07 1995-04-10 松下電器産業株式会社 ヘテロ接合素子の製造方法
JPH02288235A (ja) * 1989-04-27 1990-11-28 Fujitsu Ltd 半導設装置の製造方法
JP4661941B2 (ja) 2008-11-06 2011-03-30 トヨタ自動車株式会社 自動車およびその制御方法
JP7367541B2 (ja) * 2020-01-27 2023-10-24 住友金属鉱山株式会社 炭化ケイ素多結晶基板の製造方法

Also Published As

Publication number Publication date
JPS5825226A (ja) 1983-02-15

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