JPS6237527B2 - - Google Patents

Info

Publication number
JPS6237527B2
JPS6237527B2 JP15288778A JP15288778A JPS6237527B2 JP S6237527 B2 JPS6237527 B2 JP S6237527B2 JP 15288778 A JP15288778 A JP 15288778A JP 15288778 A JP15288778 A JP 15288778A JP S6237527 B2 JPS6237527 B2 JP S6237527B2
Authority
JP
Japan
Prior art keywords
gas
reactive gas
film
substrate
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15288778A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5578524A (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP15288778A priority Critical patent/JPS5578524A/ja
Publication of JPS5578524A publication Critical patent/JPS5578524A/ja
Publication of JPS6237527B2 publication Critical patent/JPS6237527B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
JP15288778A 1978-12-10 1978-12-10 Manufacture of semiconductor device Granted JPS5578524A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15288778A JPS5578524A (en) 1978-12-10 1978-12-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15288778A JPS5578524A (en) 1978-12-10 1978-12-10 Manufacture of semiconductor device

Related Child Applications (8)

Application Number Title Priority Date Filing Date
JP5560681A Division JPS56169320A (en) 1981-04-15 1981-04-15 Silicon carbide semiconductor
JP5560881A Division JPS56153727A (en) 1981-04-15 1981-04-15 Manufacture of semiconductor device
JP5560781A Division JPS56169321A (en) 1981-04-15 1981-04-15 Silicon carbide semiconductor
JP57126046A Division JPS5825226A (ja) 1982-07-19 1982-07-19 プラズマ気相反応装置
JP57126047A Division JPS5825227A (ja) 1982-07-19 1982-07-19 半導体装置作製方法
JP58048504A Division JPS5967625A (ja) 1983-03-23 1983-03-23 半導体
JP62065997A Division JPS6366922A (ja) 1987-03-20 1987-03-20 半導体装置作製方法
JP62065998A Division JPS6366923A (ja) 1987-03-20 1987-03-20 連続式半導体被膜形成装置

Publications (2)

Publication Number Publication Date
JPS5578524A JPS5578524A (en) 1980-06-13
JPS6237527B2 true JPS6237527B2 (sr) 1987-08-13

Family

ID=15550286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15288778A Granted JPS5578524A (en) 1978-12-10 1978-12-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5578524A (sr)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5795677A (en) * 1980-12-03 1982-06-14 Kanegafuchi Chem Ind Co Ltd Amorphous silicon type photoelectric tranducer
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
JPS5742331A (en) * 1980-08-26 1982-03-09 Canon Inc Manufacture for deposited film
JPS5773174A (en) * 1980-10-24 1982-05-07 Semiconductor Energy Lab Co Ltd Manufacturing apparatus for coating film
JPS5787120A (en) * 1980-11-20 1982-05-31 Matsushita Electric Ind Co Ltd Method and device for plasma cvd
US4369730A (en) * 1981-03-16 1983-01-25 Energy Conversion Devices, Inc. Cathode for generating a plasma
JPS56169320A (en) * 1981-04-15 1981-12-26 Shunpei Yamazaki Silicon carbide semiconductor
JPS57194521A (en) * 1981-05-25 1982-11-30 Sekisui Chem Co Ltd Manufacture of thin film semiconductor
JPS5821817A (ja) * 1981-07-31 1983-02-08 Nippon Telegr & Teleph Corp <Ntt> 非晶質多層薄膜作製装置
JPS5850733A (ja) * 1981-09-21 1983-03-25 Fuji Electric Corp Res & Dev Ltd 太陽電池用薄膜量産装置
US4438723A (en) * 1981-09-28 1984-03-27 Energy Conversion Devices, Inc. Multiple chamber deposition and isolation system and method
JPS5860537U (ja) * 1981-10-21 1983-04-23 市光工業株式会社 車輛用灯具
JPS5893322A (ja) * 1981-11-30 1983-06-03 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
JPS5893321A (ja) * 1981-11-30 1983-06-03 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
US4423701A (en) * 1982-03-29 1984-01-03 Energy Conversion Devices, Inc. Glow discharge deposition apparatus including a non-horizontally disposed cathode
JPS5916328A (ja) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS5916329A (ja) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US5468653A (en) * 1982-08-24 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US5391893A (en) * 1985-05-07 1995-02-21 Semicoductor Energy Laboratory Co., Ltd. Nonsingle crystal semiconductor and a semiconductor device using such semiconductor
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JPS59115574A (ja) 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPS5941470A (ja) * 1982-08-31 1984-03-07 Shimadzu Corp 多室形薄膜作成装置
JPS5952835A (ja) * 1982-09-20 1984-03-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS5958820A (ja) * 1982-09-28 1984-04-04 Matsushita Electronics Corp 気相エピタキシヤル成長装置
US4515107A (en) * 1982-11-12 1985-05-07 Sovonics Solar Systems Apparatus for the manufacture of photovoltaic devices
JPS59167013A (ja) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol プラズマｃｖｄ装置
JPS59167012A (ja) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol プラズマｃｖｄ装置
JPS58190810A (ja) * 1983-03-16 1983-11-07 Yoshihiro Hamakawa Ｐ型アモルフアスシリコンカ−バイドの製造方法
JPS6010681A (ja) * 1983-06-30 1985-01-19 Canon Inc 光電変換部材の製造装置
JPS60131970A (ja) * 1983-12-20 1985-07-13 Canon Inc 堆積膜形成法
JPH0766911B2 (ja) * 1985-11-18 1995-07-19 株式会社半導体エネルギー研究所 被膜形成方法
US5780313A (en) * 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
JP2654433B2 (ja) * 1985-11-12 1997-09-17 株式会社 半導体エネルギー研究所 珪素半導体作製方法
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
JPS6123760A (ja) * 1984-07-09 1986-02-01 Canon Inc 電子写真感光体の製造方法
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
JPS62167885A (ja) * 1986-11-19 1987-07-24 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体の作製方法
JPH01157520A (ja) * 1988-11-18 1989-06-20 Semiconductor Energy Lab Co Ltd プラズマ気相反応方法
JPH02283078A (ja) * 1989-05-15 1990-11-20 Semiconductor Energy Lab Co Ltd 発光素子
JP2704569B2 (ja) * 1991-06-28 1998-01-26 株式会社半導体エネルギー研究所 半導体装置作製方法
JPH05251356A (ja) * 1991-11-06 1993-09-28 Semiconductor Energy Lab Co Ltd 被膜形成方法
JPH05304096A (ja) * 1991-11-06 1993-11-16 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPH05343714A (ja) * 1991-12-24 1993-12-24 Kanegafuchi Chem Ind Co Ltd アモルフアスシリコン系光電素子の製造方法
JP2530408B2 (ja) * 1992-05-06 1996-09-04 鐘淵化学工業 株式会社 アモルフアスシリコン系光電素子の製造方法
JP2673766B2 (ja) * 1992-08-25 1997-11-05 株式会社半導体エネルギー研究所 炭素を主成分とする材料の作製方法
JP2592392B2 (ja) * 1993-03-30 1997-03-19 株式会社 半導体エネルギー研究所 珪素を含む炭素被膜の作製方法
JPH0812848B2 (ja) * 1994-07-25 1996-02-07 株式会社半導体エネルギー研究所 半導体装置製造方法
JP2626705B2 (ja) * 1994-07-25 1997-07-02 株式会社 半導体エネルギー研究所 被膜作製方法
JP5025591B2 (ja) * 2008-08-08 2012-09-12 親夫 木村 薄膜半導体層の形成方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1978 *
PHILOS MAG=1977 *

Also Published As

Publication number Publication date
JPS5578524A (en) 1980-06-13

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