JPS6334556B2 - - Google Patents
Info
- Publication number
- JPS6334556B2 JPS6334556B2 JP56113723A JP11372381A JPS6334556B2 JP S6334556 B2 JPS6334556 B2 JP S6334556B2 JP 56113723 A JP56113723 A JP 56113723A JP 11372381 A JP11372381 A JP 11372381A JP S6334556 B2 JPS6334556 B2 JP S6334556B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- permalloy
- conductor pattern
- magnetic bubble
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910000889 permalloy Inorganic materials 0.000 claims description 47
- 239000004020 conductor Substances 0.000 claims description 44
- 230000006870 function Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0875—Organisation of a plurality of magnetic shift registers
- G11C19/0883—Means for switching magnetic domains from one path into another path, i.e. transfer switches, swap gates or decoders
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56113723A JPS5817589A (ja) | 1981-07-22 | 1981-07-22 | 磁気バブルメモリ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56113723A JPS5817589A (ja) | 1981-07-22 | 1981-07-22 | 磁気バブルメモリ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5817589A JPS5817589A (ja) | 1983-02-01 |
| JPS6334556B2 true JPS6334556B2 (cs) | 1988-07-11 |
Family
ID=14619503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56113723A Granted JPS5817589A (ja) | 1981-07-22 | 1981-07-22 | 磁気バブルメモリ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5817589A (cs) |
-
1981
- 1981-07-22 JP JP56113723A patent/JPS5817589A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5817589A (ja) | 1983-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5716758A (en) | Process for forming fine pattern for semiconductor device utilizing multiple interlaced exposure masks | |
| US4470873A (en) | Method of manufacturing magnetic sensor comprising at least two magnetoresistive elements | |
| JPS62245509A (ja) | 薄膜磁気ヘツドの製造方法 | |
| US20030060055A1 (en) | Resist pattern, a method for fabricating a resist pattern, a method for patterning a thin film and a method for manufacturing a micro device | |
| JPS6236636B2 (cs) | ||
| US4902646A (en) | MESFET process employing dummy electrodes and resist reflow | |
| JP3468417B2 (ja) | 薄膜形成方法 | |
| JPS62102531A (ja) | エツチング方法 | |
| JP2796068B2 (ja) | 感光膜パターンの形成方法 | |
| JP2567221B2 (ja) | 薄膜磁気ヘツド及びその製造方法 | |
| JPS6233580B2 (cs) | ||
| KR100608350B1 (ko) | 오버레이 판독 정확도 개선용 오버레이 버어니어 및 그제조방법 | |
| JPH0526182B2 (cs) | ||
| JP2663589B2 (ja) | 複合基板の位置合せマーカー形成方法 | |
| JP2693171B2 (ja) | 薄膜磁気ヘッドの製造方法 | |
| JPS59154625A (ja) | 薄膜磁気ヘツド製造方法 | |
| JPS62126634A (ja) | 半導体ウエハの位置合せマ−ク | |
| JPS6212618Y2 (cs) | ||
| JPS6180835A (ja) | 半導体装置 | |
| KR0126636B1 (ko) | 반도체소자의 패턴 형성방법 | |
| KR100567061B1 (ko) | Ｘ/ｙ 방향간 단차 최소화용 멀티 버어니어의 제조방법 | |
| JP2773505B2 (ja) | 半導体装置およびその製造方法 | |
| JP2001176773A (ja) | レジストパターン形成法 | |
| JPS616865A (ja) | 半導体集積回路の製造方法 | |
| JP2590467B2 (ja) | 選択的熱酸化方法 |