JPS6350049A - Resin sealed type semiconductor device - Google Patents
Resin sealed type semiconductor deviceInfo
- Publication number
- JPS6350049A JPS6350049A JP61194263A JP19426386A JPS6350049A JP S6350049 A JPS6350049 A JP S6350049A JP 61194263 A JP61194263 A JP 61194263A JP 19426386 A JP19426386 A JP 19426386A JP S6350049 A JPS6350049 A JP S6350049A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- resin
- joining
- mounting member
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、樹脂封止型半導体装置に関し、さらに詳し
くは、半導体素子、その載置部材および封止樹脂相互の
反り防止手段を講じた樹脂封止型半導体装置の改良構造
に係るものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a resin-sealed semiconductor device, and more particularly, to a resin-sealed semiconductor device, and more particularly, to a resin molded semiconductor device, a mounting member for the semiconductor element, and a resin molded with a means for preventing mutual warpage of the molding resin. This invention relates to an improved structure of a sealed semiconductor device.
従来例によるこの種の樹脂封止型半導体装置の概要構成
断面を第３図および第４図（ａ）、（ｂ）に示す。A schematic cross-sectional view of a conventional resin-sealed semiconductor device of this type is shown in FIGS. 3 and 4(a) and 4(b).
すなわち、まず第３図において、符号１は半導体素子、
２は同半導体素子１を封止する封止樹脂であり、また、
３は封１Ｆ樹脂内から外部に取出されたそれぞれの導電
部材、４は前記半導体素子１の各端子と各導電部材３と
を電気的に接続する内部リード線、５は前記半導体素子
１を接合材６によって、接合、載置している載置部材で
ある。そしてこ−では、前記各導電部材３および載置部
材５の材料には、通常の場合、銅系合金が用いられる。That is, first of all, in FIG. 3, reference numeral 1 indicates a semiconductor element;
2 is a sealing resin that seals the semiconductor element 1, and
Reference numeral 3 denotes each conductive member taken out from inside the sealing 1F resin, 4 an internal lead wire that electrically connects each terminal of the semiconductor element 1 and each conductive member 3, and 5 a joint of the semiconductor element 1. This is a mounting member that is joined and mounted by a material 6. In this case, the conductive members 3 and the mounting member 5 are usually made of a copper alloy.
また、第４図（ａ） 、 （ｂ）は、前記従来例装置で
の半導体素子１と接合材６を介した載置部材５との接合
関係を示す平面図、縦断面図であって、半導体素子ｌは
、その下面中央部を自身の大きさよりも十分に小さな面
積範囲内で、単一な平板形状をした載置部材５上に、接
合材６を用いて適宜に接合させたものである。Further, FIGS. 4(a) and 4(b) are a plan view and a longitudinal cross-sectional view showing the bonding relationship between the semiconductor element 1 and the mounting member 5 via the bonding material 6 in the conventional device, The semiconductor element l has its lower surface centrally bonded to a single plate-shaped mounting member 5 using a bonding material 6 within an area sufficiently smaller than the semiconductor element itself. be.
しかしながら、前記のように構成された従来例による樹
脂封止型半導体装置においては、半導体素子１が大型化
した場合、その載置部材５に対する接合、載置態様のた
めに、安定した接合面積を得ることがはなはだ困難であ
って、接合面積が小さければ、折角、載置させた半導体
素子１が、樹脂封止以前に載置部材５上から脱落する惧
れがあり、また、これとは反対に、接合面積が大きけれ
ば、半導体素子１での基材シリコンの熱膨張係数（Ｓｉ
；約３．５Ｘ １０−６１／’Ｃりと、載置部材５の
熱膨張係数（銅系合金；約１．７Ｘ １０−６１／’Ｃ
りとが、相互に大きく異なるために、接合後の温度変化
で、第５図に見られるように、反りを生じて半導体素子
ｌの破壊を招くことがある。However, in the conventional resin-sealed semiconductor device configured as described above, when the semiconductor element 1 increases in size, a stable bonding area is required due to the bonding and mounting manner to the mounting member 5. If the bonding area is very difficult to obtain and the bonding area is small, there is a risk that the mounted semiconductor element 1 will fall off from the mounting member 5 before being sealed with the resin. In addition, if the bonding area is large, the thermal expansion coefficient (Si
; about 3.5X 10-61/'C and the thermal expansion coefficient of the mounting member 5 (copper alloy; about 1.7X 10-61/'C
Since the curvatures are greatly different from each other, a temperature change after bonding may cause warping, which may lead to destruction of the semiconductor element 1, as shown in FIG.
また一方、封止樹脂２についても、熱膨張係数（例えば
、エポキシ樹脂：約２〜５×１０−５１／°Ｃ）が半導
体素子１とは大きく異なって、載置部材５に近く、たと
え樹脂」」止具前に半導体素子１に反りを生じていなく
ても、通常の場合、封止樹脂２と半導体素子１間の密着
力に比較して、載置部材５と封止樹脂２間の密着力が弱
いために、先の第３図従来例構成に見られるように、た
とえ素子」−下部分の樹脂厚を相Ｗに等しくさせてあっ
たとしても（同図中、 ｔ１＝ ｔ３） 、半導体素子
１と」］止樹脂２とは、封止後の温度変化に伴なって、
同様に反りを生ずることになる。なお、ｔ２は半導体素
子１の厚さである。On the other hand, the sealing resin 2 also has a thermal expansion coefficient (e.g., epoxy resin: approximately 2 to 5 x 10-51/°C) that is significantly different from that of the semiconductor element 1, and is close to that of the mounting member 5. Even if the semiconductor element 1 is not warped before the fastener, the adhesive strength between the mounting member 5 and the encapsulating resin 2 is usually lower than that between the encapsulating resin 2 and the semiconductor element 1. Due to the weak adhesion, as seen in the prior art configuration in Figure 3, even if the resin thickness at the lower part of the element is made equal to the phase W (t1 = t3 in the figure) , the semiconductor element 1 and the sealing resin 2, as the temperature changes after sealing,
Similarly, warping will occur. Note that t2 is the thickness of the semiconductor element 1.
そこで、第６図に示したように、半導体素子１の上下部
分での封１１−樹脂２の厚さを代えることによって（同
図中、 ｔｔ＜ｔ３） 、半導体素子１の反りを一時的
には抑制し得るものと考えられるが、同時に封止樹脂２
の反りをも解消するのは困難である。Therefore, as shown in FIG. 6, by changing the thickness of the seal 11 and the resin 2 at the upper and lower parts of the semiconductor element 1 (tt<t3 in the figure), the warpage of the semiconductor element 1 can be temporarily suppressed. It is thought that this can be suppressed, but at the same time, the sealing resin 2
It is also difficult to eliminate warpage.
すなわち、このように従来例による装置構成の場合には
、特に半導体素子が大型化すると、温度変化に伴なう反
りの発生により、この半導体素子自体、あるいは封止樹
脂が破壊されるに至ると云う問題点があった。In other words, in the case of the conventional device configuration as described above, especially when the semiconductor element becomes large, warping due to temperature changes can lead to destruction of the semiconductor element itself or the sealing resin. There was a problem.
この発明は、従来のこのような問題点を解消するために
なされたもので、その目的とするところは、半導体素子
、その載置部材および封１Ｆ樹脂相互の接合に伴なう反
り、ならびに樹脂封止後の半導体素子と封止樹脂の反り
を、それぞれに併せて抑制し得るようにした。この種の
樹脂封止型半導体装置を提供することである。This invention was made in order to solve these conventional problems, and its purpose is to prevent warping caused by mutual bonding of a semiconductor element, its mounting member, and sealing 1F resin, and to prevent the resin from warping. Warpage of the semiconductor element and the encapsulating resin after encapsulation can be suppressed. An object of the present invention is to provide a resin-sealed semiconductor device of this type.
前記目的を達成するために、この発明に係る樹脂側［ト
型半導体装置は、載置部材に対して、半導体素子の下面
中央部を、自身の大きさよりも十分に小さな面積範囲内
で接合させるための、その接合面積および形状に対応し
た面積、形状の接合部を、適宜に連接部を残して残余の
非接合部から分離させると共に、この非接合部には、表
裏を貫通する複数の貫通孔を穿孔させたものである。In order to achieve the above object, the resin side [G type semiconductor device according to the present invention has a method in which the lower center portion of the semiconductor element is bonded to the mounting member within an area range sufficiently smaller than the size of the semiconductor element itself. A joint part with an area and shape corresponding to the joint area and shape of the joint part is separated from the remaining non-joint part leaving a suitable joint part, and this non-joint part has multiple through holes penetrating the front and back sides. It has holes drilled in it.
すなわち、この発明においては、半導体素子の下面中央
部を、自身の大きさよりも十分に小さな面積範囲内で接
合させるための、同接合面積、形状に対応した面積、形
状の接合部を、載置部材上に一部連接状態で分離形成さ
せることにより、大型化した半導体素子と載置部材間の
接合面積を一定にでき、また、載置部材の非接合部に複
数の貫通孔を穿孔させ、かつこれらを封止樹脂で一体的
に樹脂封止させることにより、載置部材の接合部を除い
た非接合部と半導体素子間、ならびに各貫通孔内への樹
脂充填をなし得るのである。In other words, in the present invention, in order to bond the central portion of the lower surface of the semiconductor element within an area range that is sufficiently smaller than the size of the semiconductor element, a bonding portion having an area and shape corresponding to the bonding area and shape is placed. By separately forming parts on the member in a connected state, the bonding area between the enlarged semiconductor element and the mounting member can be made constant, and a plurality of through holes are bored in the non-bonded portion of the mounting member, By integrally sealing these with a sealing resin, resin can be filled between the semiconductor element and the non-bonded portion of the mounting member excluding the bonded portion, as well as into each through-hole.
以下、この発明に係る樹脂封止型半導体装置の一実施例
につき、第１図および第２図を参照して詳細に説明する
。Hereinafter, one embodiment of a resin-sealed semiconductor device according to the present invention will be described in detail with reference to FIGS. 1 and 2.
第１図はこの実施例を適用した樹脂封止型半導体装着の
概要構成を示す縦断面図、第２図は同上載置部材の平面
図であり、これらの実施例各図において、前記第３図従
来例構成と同一符号は同一または相当部分を示している
。FIG. 1 is a longitudinal sectional view showing the general structure of a resin-sealed semiconductor mounting to which this embodiment is applied, and FIG. 2 is a plan view of the same mounting member. The same reference numerals as those in the conventional structure in the figure indicate the same or corresponding parts.
この実施例構成においては、前記載置部材５にあって、
前記半導体素子ｌの下面中央部を、自身の大きさよりも
十分に小さな面積範囲ｌａ内で接合させるための、その
接合面積および形状に対応した面積、形状の接合部５ａ
を、適宜に各連接部５ｃを一部に残して、残余の非接合
部５ｂから分離させると共に、この非接合部５ｂには、
表裏を貫通する複数の貫通孔５ｄを穿孔させたものであ
る。In the configuration of this embodiment, the mounting member 5 includes:
A bonding portion 5a having an area and shape corresponding to the bonding area and shape for bonding the central portion of the lower surface of the semiconductor element l within an area range la that is sufficiently smaller than the size of the semiconductor element l.
are separated from the remaining non-joint parts 5b, leaving each connecting part 5c in a part as appropriate, and in this non-joint part 5b,
A plurality of through holes 5d are bored through the front and back sides.
しかして、前記のように形成した接合部利５を用い、そ
の接合部５ｄ上に、半導体素子１の下面中央部での所定
の面積範囲１ａを、接合材６により接合、載置させると
きは、半導体素子と載置部材間の接合面積を、例えば、
それぞれの大きさなどに対応して、相対的には常に一定
にできることになり、これによって接合に伴なう半導体
素子の反りを効果的に抑制し得るのである。Therefore, when using the bonding portion 5 formed as described above and bonding and placing a predetermined area range 1a at the center of the lower surface of the semiconductor element 1 on the bonding portion 5d using the bonding material 6, , the bonding area between the semiconductor element and the mounting member is, for example,
Corresponding to each size, etc., it can be kept relatively constant at all times, and thereby it is possible to effectively suppress the warpage of the semiconductor element that accompanies bonding.
また、前記半導体素子１と載置部材５とを、このように
接合、載置させた状態で、これらの両者を、封止樹脂２
により所定通りに樹脂封止させるときは、載置部材５の
接合部５ａを除いた残余の非接合部５ｂと半導体素子１
間、ならびに各貫通孔５ｄ内に十分な樹脂充填をなし得
ることになり、特にそれぞれの貫通孔５ｄ部分では、封
止樹脂２の絡み付きによって、強固な結合がなされるも
ので、このため機械的に載置部材５の各部と封止樹脂２
との密着力を十分に増加でき、同様に反りに対する抑制
効果を十分に発揮し得るのである。Further, in the state where the semiconductor element 1 and the mounting member 5 are bonded and mounted in this manner, both of them are sealed with a sealing resin 2.
When resin sealing is performed as specified by
This allows sufficient resin to be filled between the holes and in each of the through holes 5d, and in particular, in the portions of each through hole 5d, a strong bond is formed by the entanglement of the sealing resin 2. Therefore, mechanical Each part of the mounting member 5 and the sealing resin 2
This can sufficiently increase the adhesion force with the material, and can also sufficiently suppress warpage.
そしてまた、一般に前記載置部材５が銅系合金材料であ
って、封止樹脂２との熱膨張係数が近似していることか
ら、前記半導体素子１での上下部分のｖＡ脂厚がはぐ等
しく（第１図中、ｔｔ＝ｔ３）なるようにするときは、
同各部での熱膨張を均衡させ得て、樹脂封止後における
これらの半導体素子１と封止樹脂２との相互の反りをも
抑制できることになる。Furthermore, since the mounting member 5 is generally made of a copper-based alloy material and has a thermal expansion coefficient similar to that of the sealing resin 2, the vA thickness of the upper and lower portions of the semiconductor element 1 is approximately equal. (tt=t3 in Figure 1),
Thermal expansion in each part can be balanced, and mutual warpage between the semiconductor element 1 and the sealing resin 2 after resin sealing can be suppressed.
すなわち、このようにして、この実施例構成の場合には
、実質的に半導体素子１．その載置部材５および」４止
樹脂２の各相互間での反りを、良好かつ効果的に防止で
きるのである。That is, in this embodiment configuration, substantially the semiconductor device 1. It is possible to effectively and effectively prevent warping between the mounting member 5 and the "4" stopper resin 2.
以上詳述したように、この発明によれば、半導体素子の
下面中央部を、載置部材−Ｌに接合材により接合、載置
させ、これらの半導体素子、および載置部材のそれぞれ
を樹脂封止して構成する樹脂封＋Ｉ−，型半導体装置に
おいて、半導体素子の下面中央部を、自身の大きさより
も十分に小さな面積範囲内で接合させるための、同接合
面積、形状に対応した面積、形状の接合部を、載置部材
上に一部連接状態で分離形成させるようにしたので、半
導体素子と載置部材間の接合面積を、相対的に常に一定
にできて、接合に伴なう半導体素子の反りを効果的に抑
制させることができる。As described in detail above, according to the present invention, the central part of the lower surface of the semiconductor element is bonded and placed on the mounting member-L using a bonding material, and the semiconductor element and the mounting member are each sealed with resin. In a resin-sealed +I-, type semiconductor device, in order to bond the center part of the lower surface of the semiconductor element within an area range sufficiently smaller than the size of the semiconductor element, an area corresponding to the same bonding area and shape, Since the shaped joints are formed separately on the mounting member in a partially connected state, the joint area between the semiconductor element and the mounting member can be kept relatively constant at all times, and the Warpage of the semiconductor element can be effectively suppressed.
また、載置部材の非接合部には、複数の貫通孔を穿孔さ
せた〜めに、これらの各貫通孔の存在により、樹脂封止
時での溶融樹脂の流れが円滑化され、その結果、載置部
材の接合部を除いた非接合部と半導体素子間の隙間、そ
れに各貫通孔内への樹脂充填が完全かつ確実になされて
、密着力の向上を図り得ると共に、特にそれぞれの貫通
孔部分では、封止樹脂の絡み付きにより、強固な結合が
なされて、各部材相互の一体化、ひいては反り防止を容
易に達成でき、しかも構造的にも極めて簡単で、容易か
つ安価に実施し得るなどの優れた特長を有するものであ
る。In addition, since multiple through holes are drilled in the non-bonded part of the mounting member, the presence of each of these through holes facilitates the flow of molten resin during resin sealing, and as a result, , the gap between the non-bonded part of the mounting member excluding the bonded part and the semiconductor element, and the resin filling into each through hole are completely and reliably filled, and it is possible to improve the adhesion strength, and especially to improve the adhesive strength of each through hole. In the hole part, a strong bond is formed by entangling the sealing resin, making it easy to integrate each member with each other and prevent warping. Moreover, it is extremely simple in structure and can be implemented easily and inexpensively. It has excellent features such as:
第１図はこの発明に係る樹脂封止型半導体装置の一実施
例による概要構成を示す縦断面図、第２図は同上載置部
材の平面図であり、また第３図は従来例による同上半導
体装置の概要構成を示す縦断面図、第４図（ａ） 、
（ｂ）は同上半導体素子と載置部材との接合関係を示す
平面図、縦断面図、第５図および第６図は同上従来例で
の反りの状態およびその対応構造をそれぞれに示す断面
説明図である。
１・・・・半導体素子、１ａ・・・・接合面積範囲、２
・・・・封止樹脂、３・・・・導電部材、４・・・・内
部リード線、５・・・・載置部材、５ａ・・・・接合部
、５ｂ・・・・非接合部、５ｃ・・・・連接部、５ｄ・
・・・貫通孔、６・・・・接合材。
代理人 大 岩 増 雄
第１図
第２図
第３図
第４図FIG. 1 is a vertical cross-sectional view showing the general configuration of an embodiment of a resin-sealed semiconductor device according to the present invention, FIG. 2 is a plan view of a mounting member of the same, and FIG. 3 is a conventional example of the same. A vertical cross-sectional view showing the general configuration of a semiconductor device, FIG. 4(a),
(b) is a plan view and a vertical sectional view showing the bonding relationship between the semiconductor element and the mounting member, and FIGS. 5 and 6 are cross-sectional explanations showing the state of warpage and the corresponding structure in the conventional example as above, respectively. It is a diagram. 1... Semiconductor element, 1a... Junction area range, 2
... Sealing resin, 3... Conductive member, 4... Internal lead wire, 5... Placement member, 5a... Joint part, 5b... Non-joining part. , 5c...Connection part, 5d.
...Through hole, 6...Joining material. Agent Masuo Oiwa Figure 1 Figure 2 Figure 3 Figure 4
Claims (1)
上に接合材により接合、載置させ、これらの半導体素子
、および載置部材のそれぞれを樹脂封止して構成する樹
脂封止型半導体装置において、前記載置部材に対して、
前記半導体素子の下面中央部を、自身の大きさよりも小
さな面積範囲内で接合させるための、その接合面積、形
状に対応した面積、形状の接合部を、適宜に連接部を残
して残余の非接合部から分離させると共に、この非接合
部には、表裏を貫通する複数の貫通孔を穿孔させたこと
を特徴とする樹脂封止型半導体装置。(1) A resin-sealed semiconductor in which at least the central part of the lower surface of a semiconductor element is bonded and placed on a mounting member using a bonding material, and the semiconductor element and the mounting member are each sealed with resin. In the device, for the mounting member,
In order to bond the central part of the lower surface of the semiconductor element within an area smaller than the semiconductor element itself, a bonding part with an area and shape corresponding to the bonding area and shape is created by leaving a connecting part as appropriate and removing the remaining non-contact part. 1. A resin-sealed semiconductor device characterized in that the non-bonded part is separated from the bonded part and has a plurality of through holes penetrating the front and back sides thereof.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61194263A JPS6350049A (en) | 1986-08-19 | 1986-08-19 | Resin sealed type semiconductor device |
| US07/085,769 US4884124A (en) | 1986-08-19 | 1987-08-17 | Resin-encapsulated semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61194263A JPS6350049A (en) | 1986-08-19 | 1986-08-19 | Resin sealed type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6350049A true JPS6350049A (en) | 1988-03-02 |
| JPH0579173B2 JPH0579173B2 (en) | 1993-11-01 |
Family
ID=16321718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61194263A Granted JPS6350049A (en) | 1986-08-19 | 1986-08-19 | Resin sealed type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6350049A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19639181A1 (en) * | 1996-09-24 | 1998-04-02 | Siemens Ag | Lead frame for a microelectronic component |
| US6265770B1 (en) * | 1998-03-24 | 2001-07-24 | Seiko Epson Corporation | Mounting structure of semiconductor chip, liquid crystal device, and electronic equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5295173A (en) * | 1976-02-06 | 1977-08-10 | Hitachi Ltd | Lead frame |
| JPS554983A (en) * | 1978-06-27 | 1980-01-14 | Nec Kyushu Ltd | Lead frame for semiconductor device |
| JPS56161356U (en) * | 1980-04-28 | 1981-12-01 |
-
1986
- 1986-08-19 JP JP61194263A patent/JPS6350049A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5295173A (en) * | 1976-02-06 | 1977-08-10 | Hitachi Ltd | Lead frame |
| JPS554983A (en) * | 1978-06-27 | 1980-01-14 | Nec Kyushu Ltd | Lead frame for semiconductor device |
| JPS56161356U (en) * | 1980-04-28 | 1981-12-01 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19639181A1 (en) * | 1996-09-24 | 1998-04-02 | Siemens Ag | Lead frame for a microelectronic component |
| US6265770B1 (en) * | 1998-03-24 | 2001-07-24 | Seiko Epson Corporation | Mounting structure of semiconductor chip, liquid crystal device, and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0579173B2 (en) | 1993-11-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6521982B1 (en) | Packaging high power integrated circuit devices | |
| JP2000323623A (en) | Semiconductor device | |
| JPH08293524A (en) | Semiconductor device and manufacturing method thereof | |
| WO1998018162A1 (en) | Film carrier tape and semiconductor device, method for manufacturing them, and circuit board | |
| JPS6350049A (en) | Resin sealed type semiconductor device | |
| JP2861725B2 (en) | Semiconductor device and its lead frame | |
| JPH03218658A (en) | Lead frame and semiconductor device | |
| JP3706226B2 (en) | Intermediate and manufacturing method of ball grid array package | |
| JPH03280453A (en) | Semiconductor device and manufacture thereof | |
| JPS6350050A (en) | Resin sealed type semiconductor device | |
| JPS62229949A (en) | Manufacture of resin-sealed semiconductor | |
| JP3711669B2 (en) | Electronic component mounting board | |
| JP2606330B2 (en) | Semiconductor device | |
| JPH01257361A (en) | Resin-sealed semiconductor device | |
| JPH0462948A (en) | Semiconductor device | |
| US7868433B2 (en) | Low stress cavity package | |
| JPH1174400A (en) | Bga type semiconductor device and manufacture therefor | |
| JP2005135997A (en) | Electronic component sealing method and electronic component | |
| JPH01304738A (en) | Semiconductor device package structure | |
| KR200150930Y1 (en) | Semiconductor wire bonding device | |
| JPH10144828A (en) | Semiconductor package | |
| JPH07321255A (en) | Semiconductor package, semiconductor device using the package, and manufacture of the device | |
| JPS63302544A (en) | Lead frame for semiconductor device | |
| JPS6358859A (en) | Semiconductor device | |
| JPH10223638A (en) | Semiconductor device and mounting method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |