JPS6350123U - - Google Patents
Info
- Publication number
- JPS6350123U JPS6350123U JP14366886U JP14366886U JPS6350123U JP S6350123 U JPS6350123 U JP S6350123U JP 14366886 U JP14366886 U JP 14366886U JP 14366886 U JP14366886 U JP 14366886U JP S6350123 U JPS6350123 U JP S6350123U
- Authority
- JP
- Japan
- Prior art keywords
- doping gas
- gas supply
- vapor phase
- supply section
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案の一実施例によるＧａ／ＡｓＣ
３／Ｈ２反応系ＧａＡｓ気相成長装置の概略断
面図、第２図は本考案の実施例２の概略断面図、
第３図は従来装置の一例を示す概略断面図である
。
図中１は加熱炉、２は石英反応管、３はＧａＡ
ｓ基板、４は基板ホルダー、５はＧａソース、６
は原料ガス供給管、７はドーピングガス供給管、
８は実施例１によるドーピングガス供給部、９は
軸受機構、１０は歯車、１１は駆動軸、１２はモ
ーター、１３はガス撹拌用回転翼、１４は実施例
２によるドーピングガス供給部、１５は歯車、１
６は回転軸である。
Figure 1 shows Ga/AsC according to an embodiment of the present invention.
3 A schematic cross-sectional view of a GaAs vapor phase growth apparatus based on the H2 reaction, FIG. 2 is a schematic cross-sectional view of Example 2 of the present invention,
FIG. 3 is a schematic sectional view showing an example of a conventional device. In the figure, 1 is a heating furnace, 2 is a quartz reaction tube, and 3 is GaA
s substrate, 4 is a substrate holder, 5 is a Ga source, 6
7 is a raw material gas supply pipe, 7 is a doping gas supply pipe,
8 is a doping gas supply unit according to Example 1, 9 is a bearing mechanism, 10 is a gear, 11 is a drive shaft, 12 is a motor, 13 is a gas stirring rotor, 14 is a doping gas supply unit according to Example 2, and 15 is a gear, 1
6 is a rotation axis.
Claims (1)
長装置において、基板の真上に多数のガス噴出孔
を有するドーピング・ガス供給部を配置し、結晶
成長中に該ドーピング・ガス供給部をガス流方向
に対し、平行な面内で自転させる、もしくは、該
孔より噴出されたドーピング・ガスを撹拌する手
段を備えた事を特徴とする気相成長装置。 In a Ca/AsCl 3 /H 2 reaction system GaAs vapor phase growth apparatus, a doping gas supply section having a large number of gas ejection holes is placed directly above the substrate, and the doping gas supply section is connected to a gas flow during crystal growth. A vapor phase growth apparatus characterized by comprising means for rotating the doping gas in a plane parallel to the direction or for stirring the doping gas ejected from the hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14366886U JPS6350123U (en) | 1986-09-19 | 1986-09-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14366886U JPS6350123U (en) | 1986-09-19 | 1986-09-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6350123U true JPS6350123U (en) | 1988-04-05 |
Family
ID=31053565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14366886U Pending JPS6350123U (en) | 1986-09-19 | 1986-09-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6350123U (en) |
-
1986
- 1986-09-19 JP JP14366886U patent/JPS6350123U/ja active Pending