JPS6367272U - - Google Patents

Info

Publication number
JPS6367272U
JPS6367272U JP1987151222U JP15122287U JPS6367272U JP S6367272 U JPS6367272 U JP S6367272U JP 1987151222 U JP1987151222 U JP 1987151222U JP 15122287 U JP15122287 U JP 15122287U JP S6367272 U JPS6367272 U JP S6367272U
Authority
JP
Japan
Prior art keywords
base
electronic component
semiconductor element
end faces
optical electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987151222U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6137091&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS6367272(U) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed filed Critical
Publication of JPS6367272U publication Critical patent/JPS6367272U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Description

【図面の簡単な説明】
第１図は本考案の一実施例を示す斜視図、第２
図はその側面図、第３図はその平面図、第４図は
第１図ないし第３図のものを直列に装着したとき
の平面図、第５図は第４図の―線に沿う拡大
断面図、第６ないし第９図は本考案の応用例をそ
れぞれ示す図である。 １……光学電子部品、２……光電半導体素子、
３……基体、４，４ａ，５，５ｂ……端子、８…
…光透過層、９……間隙、１０……基体の端面、
１１……凹部、１２……基体の側面。

Claims (1)

  1. 【実用新案登録請求の範囲】 １ 絶縁材料より成る基体上面に光電半導体素子
    が取付けられ、この光電半導体素子の２端子が上
    記基体の上面より両端面を介して底面に至る金属
    層として形成され、上記光電半導体素子の上方に
    ドーム状の光透過層が設けられた光学電子部品に
    おいて、 上記基体は直方体形状であつて、その両端面に
    それぞれ凹部が設けられ、 上記金属層は、上記基体の上面及び底面におい
    て上記基体の両側面端縁との間に間隙を有し、上
    記基体の両端面において上記凹部内のみを通るよ
    うに設けられ、 回路基板上に直列及び（又は）並列に隣接して
    取付け可能であることを特徴とする光学電子部品
    。 ２ 上記基体がセラミツク材料より成る実用新案
    登録請求の範囲１項記載の光学電子部品。
JP1987151222U 1981-07-16 1987-10-01 Pending JPS6367272U (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813128187 DE3128187A1 (de) 1981-07-16 1981-07-16 Opto-elektronisches bauelement

Publications (1)

Publication Number Publication Date
JPS6367272U true JPS6367272U (ja) 1988-05-06

Family

ID=6137091

Family Applications (2)

Application Number Title Priority Date Filing Date
JP57502311A Pending JPS58500880A (ja) 1981-07-16 1982-07-16 オプトエレクトロニクコンポ−ネント
JP1987151222U Pending JPS6367272U (ja) 1981-07-16 1987-10-01

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP57502311A Pending JPS58500880A (ja) 1981-07-16 1982-07-16 オプトエレクトロニクコンポ−ネント

Country Status (4)

Country Link
EP (1) EP0083627B1 (ja)
JP (2) JPS58500880A (ja)
DE (2) DE3128187A1 (ja)
WO (1) WO1983000408A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002509362A (ja) * 1997-12-15 2002-03-26 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー オッフェネ ハンデルスゲゼルシャフト 表面取り付け可能なオプトエレクトロニクス素子を製作する方法及び表面取り付け可能なオプトエレクトロニクス素子

Families Citing this family (31)

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Publication number Priority date Publication date Assignee Title
EP0225131A3 (en) * 1985-11-29 1989-05-31 AT&T Corp. Semiconductor light emitting device and method of forming same
DE3607142A1 (de) * 1986-03-05 1987-09-10 Ap Products Gmbh Leuchtdioden-anordnung
GB2228618B (en) * 1989-02-27 1993-04-14 Philips Electronic Associated Radiation detector
EP0400175B1 (de) * 1989-05-31 1994-12-28 Siemens Aktiengesellschaft Oberflächenmontierbares Opto-Bauelement
EP0400176B1 (de) * 1989-05-31 2000-07-26 Osram Opto Semiconductors GmbH & Co. OHG Verfahren zum Montieren eines oberflächenmontierbaren Opto-Bauelements
JP3127195B2 (ja) * 1994-12-06 2001-01-22 シャープ株式会社 発光デバイスおよびその製造方法
US6274890B1 (en) 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
DE19746893B4 (de) 1997-10-23 2005-09-01 Siemens Ag Optoelektronisches Bauelement mit Wärmesenke im Sockelteil und Verfahren zur Herstellung
DE19918370B4 (de) 1999-04-22 2006-06-08 Osram Opto Semiconductors Gmbh LED-Weißlichtquelle mit Linse
DE19963264B4 (de) * 1999-12-17 2007-05-31 Optotransmitter-Umweltschutz-Technologie E.V. Trägermaterial für elektronische Hochleistungs-Bauelemente in SMD-Bauform und ein damit hergestelltes elektronisches Hochleistungs-Bauelement
JP4926337B2 (ja) * 2000-06-28 2012-05-09 アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド 光源
DE10159544A1 (de) * 2001-12-05 2003-06-26 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Verfahren zur Herstellung eines optoelektronischen Halbleiter-Bauelementes und damit hergestelltes Bauelement
TWI237546B (en) 2003-01-30 2005-08-01 Osram Opto Semiconductors Gmbh Semiconductor-component sending and/or receiving electromagnetic radiation and housing-basebody for such a component
JP2006525682A (ja) * 2003-04-30 2006-11-09 クリー　インコーポレイテッド 高出力固体発光素子パッケージ
DE10342263A1 (de) * 2003-09-11 2005-04-28 Infineon Technologies Ag Optoelektronisches Bauelement und optoelektronische Anordnung mit einem optoelektronischen Bauelement
WO2005117071A2 (de) 2004-05-31 2005-12-08 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement und gehäuse-grundkörper für ein derartiges bauelement
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP4091063B2 (ja) 2005-06-07 2008-05-28 株式会社フジクラ 発光素子実装用基板および発光素子モジュール
JP4037423B2 (ja) 2005-06-07 2008-01-23 株式会社フジクラ 発光素子実装用ホーロー基板の製造方法
DE102006032416A1 (de) 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement
EP3422425B1 (en) 2006-04-24 2022-02-23 CreeLED, Inc. Side-view surface mount white led
US8021904B2 (en) 2007-02-01 2011-09-20 Cree, Inc. Ohmic contacts to nitrogen polarity GaN
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
US8368100B2 (en) 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US8536584B2 (en) 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
US9634191B2 (en) 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US9093293B2 (en) 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
US8476668B2 (en) 2009-04-06 2013-07-02 Cree, Inc. High voltage low current surface emitting LED
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
USD826871S1 (en) 2014-12-11 2018-08-28 Cree, Inc. Light emitting diode device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4948267A (ja) * 1972-04-26 1974-05-10
JPS55107283A (en) * 1979-02-09 1980-08-16 Matsushita Electric Ind Co Ltd Luminous diode

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Publication number Priority date Publication date Assignee Title
NL290121A (ja) * 1963-03-12
US3374533A (en) 1965-05-26 1968-03-26 Sprague Electric Co Semiconductor mounting and assembly method
FR1480988A (fr) 1965-05-27 1967-05-12 Ass Elect Ind Perfectionnement au montage des dispositifs semi-conducteurs
FR1490665A (fr) * 1966-06-14 1967-08-04 Radiotechnique Coprim Rtc Diode électroluminescente et son procédé de fabrication
GB1258660A (ja) * 1969-12-19 1971-12-30
US3688186A (en) * 1970-11-18 1972-08-29 Republic Steel Corp Method and apparatus for eddy current flaw detection utilizing a detector with a positive and two negative feedback loops
DE2227322C3 (de) * 1972-06-05 1980-12-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Diffusstrahlende Lumineszenz-Halbleiterdiode mit einem Halbleiterkörper
JPS5343884B2 (ja) * 1972-11-13 1978-11-24
JPS5310862Y2 (ja) * 1972-12-28 1978-03-23
DE2351997A1 (de) 1973-10-17 1975-04-30 Licentia Gmbh Mit kunststoff umhuellter halbleiter mit mindestens drei flaechenhaften anschlusselementen
US3911430A (en) * 1974-04-17 1975-10-07 Fairchild Camera Instr Co Alpha-numeric display package
DE2425855C2 (de) * 1974-05-28 1982-09-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Fotoelektrische Leseeinheit zum Lesen optisch abtastbarer Vorlagen
CA1016679A (en) * 1975-02-14 1977-08-30 Stephen C. Fowler Alpha-numeric display package
CA1023039A (en) * 1975-02-28 1977-12-20 Bowmar Canada Limited Light emitting diode display
JPS5257789A (en) * 1975-11-07 1977-05-12 Hitachi Ltd Photo coupled semiconductor device
JPS5353983U (ja) * 1976-10-12 1978-05-09
FR2400817A1 (fr) * 1977-08-19 1979-03-16 Radiotechnique Compelec Dispositifs electroluminescents pour affichage au soleil
DD138852A1 (de) * 1978-09-18 1979-11-21 Guenter Heine Kunststoffumhuelltes optoelektronisches halbleiterbauelement
FR2471054A1 (fr) * 1979-11-30 1981-06-12 Bosch Gmbh Robert Dispositif lumineux a diode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4948267A (ja) * 1972-04-26 1974-05-10
JPS55107283A (en) * 1979-02-09 1980-08-16 Matsushita Electric Ind Co Ltd Luminous diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002509362A (ja) * 1997-12-15 2002-03-26 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー オッフェネ ハンデルスゲゼルシャフト 表面取り付け可能なオプトエレクトロニクス素子を製作する方法及び表面取り付け可能なオプトエレクトロニクス素子

Also Published As

Publication number Publication date
DE3267157D1 (en) 1985-12-05
JPS58500880A (ja) 1983-05-26
WO1983000408A1 (fr) 1983-02-03
EP0083627B1 (de) 1985-10-30
DE3128187A1 (de) 1983-02-03
EP0083627A1 (de) 1983-07-20

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