JPS6376404A - Magnetic semiconductor globular fine particle and manufacture thereof - Google Patents
Magnetic semiconductor globular fine particle and manufacture thereofInfo
- Publication number
- JPS6376404A JPS6376404A JP61219242A JP21924286A JPS6376404A JP S6376404 A JPS6376404 A JP S6376404A JP 61219242 A JP61219242 A JP 61219242A JP 21924286 A JP21924286 A JP 21924286A JP S6376404 A JPS6376404 A JP S6376404A
- Authority
- JP
- Japan
- Prior art keywords
- ferrite
- fine particles
- ceramic
- component
- solid solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010419 fine particle Substances 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000919 ceramic Substances 0.000 claims abstract description 41
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 34
- 239000011246 composite particle Substances 0.000 claims abstract description 13
- 239000006104 solid solution Substances 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 claims abstract description 5
- 239000002826 coolant Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 16
- 239000000463 material Substances 0.000 abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 7
- 238000001816 cooling Methods 0.000 abstract description 6
- 150000001875 compounds Chemical class 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract 4
- 238000000576 coating method Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- -1 Hydrogen ions Chemical class 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052845 zircon Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001768 cations Chemical group 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- AJCDFVKYMIUXCR-UHFFFAOYSA-N oxobarium;oxo(oxoferriooxy)iron Chemical compound [Ba]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O AJCDFVKYMIUXCR-UHFFFAOYSA-N 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 230000036647 reaction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Hard Magnetic Materials (AREA)
- Paints Or Removers (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は磁性半導体球状微粒子とその製造方法に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to magnetic semiconductor spherical fine particles and a method for producing the same.
〔従来の技術とその問題点コ
従来、磁性微粒子としてはフェライトが存在する。しか
し、フェライトは粒形が球状ではなく。[Prior art and its problems] Ferrite has conventionally been used as magnetic fine particles. However, the grain shape of ferrite is not spherical.
棒状であるか、またはバリュームフェライトのようにフ
レーク状であり、磁性体として異方性を持っている。こ
のため、テープやディスクなどの基材上にフェライトを
付着して磁気記録媒体を形成する際、異方性を考慮して
フェライトを基材上に配列させることは困難なことから
基材上に被着するフェライトの磁気異方性がまちまちの
方向となり。It is rod-shaped or flake-shaped like barium ferrite, and has anisotropy as a magnetic material. For this reason, when attaching ferrite to a base material such as a tape or disk to form a magnetic recording medium, it is difficult to arrange the ferrite on the base material while taking anisotropy into consideration. The magnetic anisotropy of the deposited ferrite is in different directions.
良好な磁気特性が得られない問題点があった。There was a problem that good magnetic properties could not be obtained.
また、従来ＣＶＤ（Ｃｈｅｍｉｃａｌ Ｖａｐｏｕｒ
Ｄｅｐｏｓｉｔ、１ｏｎ）等でエピタキシャル成長させ
る材料のガス源には材料が単一成分のガス源を使用し、
化合物半導体を形成する場合にも各成長成分毎のガス源
を用意しなければならず、装置および製造プロセスが複
雑化する問題点があった。In addition, conventional CVD (Chemical Vapor
For the gas source of the material to be epitaxially grown using Deposit, 1on), etc., a gas source with a single component is used,
Even when forming a compound semiconductor, a gas source must be prepared for each growth component, which poses the problem of complicating the equipment and manufacturing process.
そこで本発明は、磁気異方性が無く基材上に被着して良
好な磁気特性の磁気記録媒体が得られると共に、 ＣＶ
Ｄ用原料としてフェライト成分とセラミック成分の化合
物成分ガスの発生が可能な磁性半導体球状微粒子とその
製造方法を提供することを目的とする。Therefore, the present invention provides a magnetic recording medium that has no magnetic anisotropy and can be deposited on a base material and has good magnetic properties, and also has CV
It is an object of the present invention to provide magnetic semiconductor spherical fine particles capable of generating a compound gas of a ferrite component and a ceramic component as a raw material for D, and a method for producing the same.
［問題点を解決するための手段］
本発明はセラミック微粒子の表面にフェライト結晶を被
着した粒子単位のフェライト・セラミック複合粒子を造
り、これを加熱溶融して高速にて水や冷却板等の冷却材
に溶射することにより１粒子単位で均質な固溶体の磁性
半導体球状微粒子を得るようにしたものである。[Means for Solving the Problems] The present invention produces ferrite-ceramic composite particles in particle units in which ferrite crystals are adhered to the surface of fine ceramic particles, heats and melts the particles, and immerses them in water or a cooling plate at high speed. By thermal spraying onto a coolant, magnetic semiconductor spherical fine particles in the form of a homogeneous solid solution can be obtained on a particle-by-particle basis.
［作用コ
フェライト・セラミック複合粒子を加熱溶融することに
より、フェライト成分とセラミック成分の均質な固溶体
が得られ、更にこれを水や冷却板等に高速溶射すること
により、アモルファス状の磁性半導体球状微粒子が得ら
れ、垂直記録用磁性体として、また、フェライト・セラ
ミック化合物ＣＶＤ用原料として有用な新素材が得られ
る。[Work: By heating and melting the coferrite/ceramic composite particles, a homogeneous solid solution of ferrite and ceramic components can be obtained. Furthermore, by spraying this on water or a cooling plate at high speed, amorphous magnetic semiconductor spherical fine particles can be obtained. A new material useful as a magnetic material for perpendicular recording and as a raw material for ferrite-ceramic compound CVD is obtained.
［実施例コ
フェライト・セラミック複合粒子は１本願発明者が先に
発明し出願したが、その製造方法は以下の通りである。[Example: Coferrite/ceramic composite particles were previously invented and filed by the inventor of the present application, and the manufacturing method thereof is as follows.
まず、塩化第２鉄水溶液（濃度５〜３５％）を入れた容
器中に、磁場を形成するため１強い磁力を持った磁石を
１個または複数個を入れ、更に多数の鉄片（粒状の場合
は粒度０．１〜４ ｍ ）を入れ、流動撹拌してから該
水溶液をろ過して錯塩水溶液を得る。First, in a container containing an aqueous ferric chloride solution (concentration 5 to 35%), one or more magnets with a strong magnetic force are placed to form a magnetic field, and a large number of iron pieces (in the case of granular (particle size: 0.1 to 4 m), fluidized and stirred, and the aqueous solution is filtered to obtain a complex salt aqueous solution.
この場合、塩化第２鉄水溶液は容器中において。In this case, the ferric chloride aqueous solution is in a container.
磁気を持った鉄片と接触することによって、電解イオン
交換によるマルチ電池反応し陰極と陽極が多数発生して
水素イオンＨ＋が陰極で水素ガス１１２として放出され
陰イオン、陽イオンが安定した錯塩水溶液となっている
。By contacting a magnetic iron piece, a multi-cell reaction occurs due to electrolytic ion exchange, and a large number of cathodes and anodes are generated. Hydrogen ions H+ are released as hydrogen gas 112 at the cathode, and anions and cations form a stable complex salt aqueous solution. It has become.
次に、予めセラミック微粒子として粒度分布が０．０５
μ〜数１００μ好ましくは０．０５μ〜２０μの粒度分
布のジルコン微粒子を混入した塩化第２鉄水溶液（濃度
５〜３５％）に前記錯塩水溶液を全体の約３０％〜５０
％の割合いで混合し、充分に撹拌し複合水溶液とする。Next, the particle size distribution is 0.05 as ceramic fine particles in advance.
About 30% to 50% of the complex salt aqueous solution is added to a ferric chloride aqueous solution (concentration 5 to 35%) mixed with zircon fine particles having a particle size distribution of μ to several 100μ, preferably 0.05μ to 20μ.
% and stir thoroughly to form a composite aqueous solution.
この複合水溶液は酸性であり、ＣＱ−を持ったものであ
る。This composite aqueous solution is acidic and has CQ-.
このセラミック微粒子を複数混入した複合水溶液に苛性
ソーダ水溶液（濃度３０％）を混入することにより、前
記ＣＱ−はＮａ＋に結びつき、塩（ＮａＣＱ ）となり
、凝集過程においてフェライト（Ｆｅ ｓ ０４ ）は
黒茶色で、セラミック微粒子表面にほぼ均等に結晶生成
して被着しフェライト・セラミック複合粒子を形成する
。また、塩（ＮａＣＱ ）は水に溶けた状態となる。By mixing a caustic soda aqueous solution (concentration 30%) into a composite aqueous solution containing a plurality of ceramic fine particles, the CQ- binds to Na+ and becomes a salt (NaCQ), and in the aggregation process, the ferrite (Fe s 04 ) becomes blackish brown. , crystals form and adhere almost uniformly to the surface of the ceramic fine particles, forming ferrite-ceramic composite particles. Further, the salt (NaCQ) is dissolved in water.
この状態でフェライト・セラミック複合粒子を沈澱させ
て上ずみを捨てたもの、または遠心分離して水を分離し
たものに水を加えて塩（ＮａＣＱ ）をうすめて洗い流
して取り去り、しかる後、フェライト・セラミック複合
粒子に残留する水分を分離。In this state, the ferrite/ceramic composite particles are precipitated and the top layer is discarded, or the water is separated by centrifugation, water is added to dilute the salt (NaCQ), and the salt (NaCQ) is washed away and removed. Separates moisture remaining in ceramic composite particles.
乾燥処理して純度の高いフェライトを均等に被着したセ
ラミック体即ちフェライト・セラミック複合粒子を得る
。A drying process is performed to obtain a ceramic body, that is, a ferrite-ceramic composite particle to which highly pure ferrite is evenly coated.
このようにして製造されたフェライト・セラミック複合
粒子は、セラミック体１微粒子単位でフェライト（Ｆｅ
３０４）が均等に被着され′たもので、セラミック体
微粒子の粒度が０．０５μ〜２０μの場合は、粒度（分
布）が約０．１μ〜２５μである。The ferrite-ceramic composite particles produced in this way are made of ferrite (Fe
304) is uniformly deposited and the particle size of the ceramic fine particles is 0.05 μm to 20 μm, the particle size (distribution) is approximately 0.1 μm to 25 μm.
このフェライト・セラミック複合粒子はフェライトがセ
ラミック体微粒子表面に強力に結合被着し、機械的摩擦
、衝撃等によっても分離しにくい。In these ferrite/ceramic composite particles, ferrite is strongly bonded and adhered to the surface of the ceramic fine particles, and is difficult to separate even by mechanical friction, impact, etc.
上記の場合、フェライト成分として塩化第２鉄を用いた
ものについて説明したが、これに限定されるものでなく
、塩化第２鉄と一緒に塩化第２ニッケル、塩化コバルト
、塩化バリューム、塩化チタン等の金属または半金属塩
化物を複合添加しても良い。In the above case, ferric chloride is used as the ferrite component, but the ferrite component is not limited to this. A combination of metal or metalloid chlorides may be added.
例えば、セラミック微粒子表面にフェライト・ニッケル
を被着させたい場合は、上述の塩化第２鉄水溶液の代り
に塩化第２鉄と塩化第２ニッケルの複合水溶液を用いれ
ばよい。For example, if it is desired to deposit ferrite nickel on the surface of the ceramic fine particles, a composite aqueous solution of ferric chloride and nickel chloride may be used instead of the above-mentioned ferric chloride aqueous solution.
また、セラミック微粒子としてジルコン（ＺｒＳｉＯａ
）を用いたものについて説明したが、これに限定され
るものではなく、ジルコニア（Ｚｒ０２ ）、２酸化け
い素（５１０２）、アルナミ（ＡＱ２０ｓ）、酸化コバ
ルト、酸化チタン、酸化バリューム、酸化はう素等の金
属または半金属の酸化物微粒子または窒化けい素等の窒
化物微粒子またはカーボンまたは炭化けい素等の炭化物
微粒子等の非金属類との化合物質およびそれら各種の複
金物微粒子を用いても良い。In addition, zircon (ZrSiOa) is used as ceramic fine particles.
), but the invention is not limited to this, and examples include zirconia (Zr02), silicon dioxide (5102), alumina (AQ20s), cobalt oxide, titanium oxide, barium oxide, and boron oxide. Compound substances with non-metals such as oxide particles of metals or semimetals, nitride particles such as silicon nitride, or carbide particles such as carbon or silicon carbide, and various composite metal particles thereof may also be used. .
次に、このようにして得られたフェライト・セラミック
複合粒子の粉体（平均粒度０．６μ）をプラズマ溶射装
置にて高温還元溶融する。このとき、フェライトとセラ
ミックは同じ温度で同時に溶融し、フェライト成分とセ
ラミック成分が均質に混合結合した状態となる。これを
高速（約３０ｍ／５ｅｃ）にて、水又は冷却板に衝突さ
せて急冷することにより、フェライト成分とセラミック
成分が結合したアモルファス状の磁性半導体球状微粒子
が得られる。Next, the thus obtained powder of ferrite-ceramic composite particles (average particle size: 0.6 μm) is reduced and melted at a high temperature using a plasma spraying device. At this time, the ferrite and the ceramic are melted at the same time at the same temperature, and the ferrite component and the ceramic component are homogeneously mixed and bonded. By colliding this with water or a cooling plate at high speed (approximately 30 m/5 ec) and rapidly cooling it, amorphous magnetic semiconductor spherical fine particles in which a ferrite component and a ceramic component are combined are obtained.
このようにして得られた磁性半導体球状微粒子は、フェ
ライト成分（Ｆｅ ｓ Ｏａ ）とセラミック成分（Ｚ
ｒＱ ２又はＺｒ５ｉ０４ ）とが良好に固溶したもの
であるから、耐熱性、高確度で強磁性をもつものである
。しかも、この磁性半導体球状微粒子はフェライト成分
とセラミック成分とが均質に固溶して、アモルファス状
態の半導体微粒子となったものである。従って、記録用
磁性材として優れた磁気特性を発揮すると共に、有機物
バインダー等の混合において、球状微粒子であるので、
混合比を高めることができる。このことは磁気記録媒体
製造時における製造プロセスを容易にし、均質にして特
性の良い製品が得られることを意味する。The thus obtained magnetic semiconductor spherical fine particles contain a ferrite component (Fe s Oa ) and a ceramic component (Z
rQ 2 or Zr5i04) in a good solid solution, it has heat resistance, high accuracy, and ferromagnetism. In addition, these magnetic semiconductor spherical fine particles have a homogeneous solid solution of a ferrite component and a ceramic component, resulting in semiconductor fine particles in an amorphous state. Therefore, it exhibits excellent magnetic properties as a magnetic recording material, and when mixed with an organic binder, etc., it is a spherical fine particle.
The mixing ratio can be increased. This means that the manufacturing process in manufacturing the magnetic recording medium is facilitated, and a homogeneous product with good characteristics can be obtained.
また、セラミック・フェライトの半導体装置等を製造す
る場合に、 ＣＶＯの原料素材として、多成分同時蒸着
が可能となる。即ち、現在のＣｖＤにおいては単−成分
毎のガスしか発生できないが１本発明による磁性半導体
微粒子をＣＶＤ用原料として用いれば、多成分であるセ
ラミック・フェライト成分ガスの発生が可能となり、多
成分同時蒸着によるセラミック・フェライトの単結晶エ
ピタキシャル成長が、所望の成分比で形成できるように
なるゆ［発明の効果コ
以上のように本発明によれば、特に記録用磁性材料およ
び半導体形成用材料として、従来にない優れた機能、特
性を発揮する磁性半導体微粒子が得られる。Furthermore, when manufacturing ceramic/ferrite semiconductor devices, etc., simultaneous vapor deposition of multiple components is possible as a raw material for CVO. That is, in current CVD, only a single component gas can be generated, but if the magnetic semiconductor fine particles according to the present invention are used as a raw material for CVD, it is possible to generate a multi-component ceramic/ferrite component gas, and multiple components can be generated simultaneously. Since single crystal epitaxial growth of ceramic ferrite can be performed by vapor deposition with a desired component ratio, the present invention can be used as a magnetic material for recording and as a material for forming semiconductors. Magnetic semiconductor particles can be obtained that exhibit excellent functions and properties not found elsewhere.
Claims (2)
球状微粒子状に形成されて成ることを特徴とする磁性半
導体球状微粒子。(1) Magnetic semiconductor spherical fine particles characterized in that a ceramic component and a ferrite component are homogeneously dissolved in solid solution and formed into spherical fine particles.
着したフェライト・セラミック複合粒子より成る粉末を
高温加熱溶融し、冷却材に高速溶射することにより急冷
して固溶状態の球状微粒子を形成することを特徴とする
磁性半導体球状微粒子の製造方法。(2) Powder consisting of ferrite/ceramic composite particles with ferrite crystals adhered to the surface of ceramic fine particles is heated and melted at high temperature, and then rapidly cooled by spraying on a coolant at high speed to form spherical fine particles in a solid solution state. A method for producing magnetic semiconductor spherical fine particles characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61219242A JPS6376404A (en) | 1986-09-19 | 1986-09-19 | Magnetic semiconductor globular fine particle and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61219242A JPS6376404A (en) | 1986-09-19 | 1986-09-19 | Magnetic semiconductor globular fine particle and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6376404A true JPS6376404A (en) | 1988-04-06 |
| JPH0530284B2 JPH0530284B2 (en) | 1993-05-07 |
Family
ID=16732442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61219242A Granted JPS6376404A (en) | 1986-09-19 | 1986-09-19 | Magnetic semiconductor globular fine particle and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6376404A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102186372B1 (en) * | 2019-09-24 | 2020-12-03 | (주)전진티티에스 | Superprecision collet chuck for high speed spindle |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52151897A (en) * | 1976-06-11 | 1977-12-16 | Matsushita Electric Ind Co Ltd | Magnetic semiconductor and its manufactruring method |
| JPS6077129A (en) * | 1983-09-30 | 1985-05-01 | Toshiba Corp | Magnetic powder of barium ferrite |
| JPS6110210A (en) * | 1984-06-26 | 1986-01-17 | Fuji Photo Film Co Ltd | Ferrite magnetic grain for magnetic recording |
-
1986
- 1986-09-19 JP JP61219242A patent/JPS6376404A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52151897A (en) * | 1976-06-11 | 1977-12-16 | Matsushita Electric Ind Co Ltd | Magnetic semiconductor and its manufactruring method |
| JPS6077129A (en) * | 1983-09-30 | 1985-05-01 | Toshiba Corp | Magnetic powder of barium ferrite |
| JPS6110210A (en) * | 1984-06-26 | 1986-01-17 | Fuji Photo Film Co Ltd | Ferrite magnetic grain for magnetic recording |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102186372B1 (en) * | 2019-09-24 | 2020-12-03 | (주)전진티티에스 | Superprecision collet chuck for high speed spindle |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0530284B2 (en) | 1993-05-07 |
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