JPS6410671A - Compound semiconductor field effect transistor - Google Patents

Compound semiconductor field effect transistor

Info

Publication number
JPS6410671A
JPS6410671A JP62165444A JP16544487A JPS6410671A JP S6410671 A JPS6410671 A JP S6410671A JP 62165444 A JP62165444 A JP 62165444A JP 16544487 A JP16544487 A JP 16544487A JP S6410671 A JPS6410671 A JP S6410671A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
insulator
inas
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62165444A
Other languages
Japanese (ja)
Inventor
Takao Waho
Fumihiko Yanagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP62165444A priority Critical patent/JPS6410671A/en
Publication of JPS6410671A publication Critical patent/JPS6410671A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Abstract

PURPOSE:To restrain the generation of level of III-V compound semiconductor/ insulating film boundary, by constituting a second semiconductor layer formed on a first semiconductor layer, of group III-V compounds, making group V element forming the second semiconductor layer identical with group V element in the first semiconductor layer, and making the energy gap of the second semiconductor layer smaller than that of the first semiconductor layer. CONSTITUTION:On a p-type GaAs epitaxial layer 12 formed on, e.g. an semiinsulative GaAs substrate 11, an InAs intermediate layer 13 is formed, on which a CaF2 insulator layer 14 is arranged. 15 and 22 are arranged in the p-type GaAs epitaxial layer 12 and the InAs intermediate layer 13, and are a source region and a drain region in which Si is implanted. 16 and 17 are a source electrode and a drain electrode which are arranged so as to be linked with the source region 15 and the drain region 22, respectively. 18 is a gate electrode arranged on the CaF4 insulator layer 14. 19 is a channel region. As InAs is inserted into a GaAs/insulator boundary, Fermi level pinning phenomena caused by III-V compound semiconductor/insulator boundary level is effectively avoided.
JP62165444A 1987-07-03 1987-07-03 Compound semiconductor field effect transistor Pending JPS6410671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62165444A JPS6410671A (en) 1987-07-03 1987-07-03 Compound semiconductor field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62165444A JPS6410671A (en) 1987-07-03 1987-07-03 Compound semiconductor field effect transistor

Publications (1)

Publication Number Publication Date
JPS6410671A true JPS6410671A (en) 1989-01-13

Family

ID=15812548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62165444A Pending JPS6410671A (en) 1987-07-03 1987-07-03 Compound semiconductor field effect transistor

Country Status (1)

Country Link
JP (1) JPS6410671A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04101074A (en) * 1990-08-14 1992-04-02 Mitsubishi Heavy Ind Ltd Windmill
JP2004260140A (en) * 2003-02-06 2004-09-16 Toyota Central Res & Dev Lab Inc Semiconductor device having group III nitride semiconductor
JP2007081346A (en) * 2005-09-16 2007-03-29 Fujitsu Ltd Nitride semiconductor field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04101074A (en) * 1990-08-14 1992-04-02 Mitsubishi Heavy Ind Ltd Windmill
JP2004260140A (en) * 2003-02-06 2004-09-16 Toyota Central Res & Dev Lab Inc Semiconductor device having group III nitride semiconductor
JP2007081346A (en) * 2005-09-16 2007-03-29 Fujitsu Ltd Nitride semiconductor field effect transistor

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