JPS6412571A - Semiconductor photodetector device - Google Patents

Semiconductor photodetector device

Info

Publication number
JPS6412571A
JPS6412571A JP62169535A JP16953587A JPS6412571A JP S6412571 A JPS6412571 A JP S6412571A JP 62169535 A JP62169535 A JP 62169535A JP 16953587 A JP16953587 A JP 16953587A JP S6412571 A JPS6412571 A JP S6412571A
Authority
JP
Japan
Prior art keywords
transducer
film
unevenness
variation
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62169535A
Other languages
Japanese (ja)
Inventor
Hiroshi Konakano
Kojin Kawahara
Satoshi Machida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments and Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments and Electronics Ltd filed Critical Seiko Instruments and Electronics Ltd
Priority to JP62169535A priority Critical patent/JPS6412571A/en
Publication of JPS6412571A publication Critical patent/JPS6412571A/en
Pending legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To reduce the variation of the output caused by the unevenness in thickness of a protective film by providing an intermediate insulating layer in which a plurality of apertures are formed on an optoelectric transducer. CONSTITUTION:An optoelectric transducer 7 and a semiconductor integrated circuit 9 are formed on a one conductivity type semiconductor substrate 3. An intermediate insulating layer 4 is formed over the transducer 7 and the circuit 9. Further, contact holes 6 are drilled in the film 4 on the surface of the transducer 7. A photdetecting part 10 is provided linearly along the left-to- right direction of the substrate 3 and a reading circuit part 11 for signal processing is provided along the same direction with the dimensions nearly equal to those of the transducer 7. By using the film 4 and treating the transducer 7 like this, the variation of the output caused by the unevenness in thickness of a protective film 2 can be reduced.
JP62169535A 1987-07-07 1987-07-07 Semiconductor photodetector device Pending JPS6412571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62169535A JPS6412571A (en) 1987-07-07 1987-07-07 Semiconductor photodetector device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62169535A JPS6412571A (en) 1987-07-07 1987-07-07 Semiconductor photodetector device

Publications (1)

Publication Number Publication Date
JPS6412571A true JPS6412571A (en) 1989-01-17

Family

ID=15888293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62169535A Pending JPS6412571A (en) 1987-07-07 1987-07-07 Semiconductor photodetector device

Country Status (1)

Country Link
JP (1) JPS6412571A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006229098A (en) * 2005-02-21 2006-08-31 New Japan Radio Co Ltd Optical semiconductor device and manufacturing method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006229098A (en) * 2005-02-21 2006-08-31 New Japan Radio Co Ltd Optical semiconductor device and manufacturing method therefor

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