JPH044736U - - Google Patents

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Publication number
JPH044736U
JPH044736U JP4403890U JP4403890U JPH044736U JP H044736 U JPH044736 U JP H044736U JP 4403890 U JP4403890 U JP 4403890U JP 4403890 U JP4403890 U JP 4403890U JP H044736 U JPH044736 U JP H044736U
Authority
JP
Japan
Prior art keywords
gas
injector
thin film
film forming
forming apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4403890U
Other languages
Japanese (ja)
Other versions
JPH0719143Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990044038U priority Critical patent/JPH0719143Y2/en
Publication of JPH044736U publication Critical patent/JPH044736U/ja
Application granted granted Critical
Publication of JPH0719143Y2 publication Critical patent/JPH0719143Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、本考案に従つた、ガス導入装置を組
み込んだ縦型ＣＶＤ装置の一部断面図である。第
２図はガス導入装置のホルダーを示す部分拡大断
面図である。第３図は、従来のインジエクタを組
み込んだ縦型ＣＶＤ装置の略示断面図である。 主要符号の説明、１……縦型ＣＶＤ装置、２…
…ガス導入装置、３……ホルダー、４……開口、
５……水平部、６……上方部、７……下方部、１
０……調節ネジ、１５……インジエクタ、１６…
…穴。 FIG. 1 is a partial sectional view of a vertical CVD apparatus incorporating a gas introduction device according to the present invention. FIG. 2 is a partially enlarged sectional view showing the holder of the gas introduction device. FIG. 3 is a schematic cross-sectional view of a vertical CVD apparatus incorporating a conventional injector. Explanation of main symbols, 1...Vertical CVD equipment, 2...
...Gas introduction device, 3...Holder, 4...Opening,
5...Horizontal part, 6...Upper part, 7...Lower part, 1
0...adjustment screw, 15...injector, 16...
…hole.

Claims (1)

【実用新案登録請求の範囲】 １ 反応管内部に複数の半導体基板を平行に並べ
て収納し、ガスを供給し半導体基板上に気相成長
層を形成する薄膜形成装置において、 反応管内にガスを供給するための、反応管に沿
つて伸びた複数の穴を有するインジエクタと、 ガスを前記インジエクタ内に導入するための、
インジエクタの末端を着脱自在に収納するホルダ
ーと から成るガス導入装置を設けたことを特徴とする
薄膜形成装置。 ２ 反応管内部に複数の半導体基板を平行に並べ
て収納し、ガスを供給し半導体基板上に気相成長
層を形成する薄膜形成装置において、 反応管内にガスを供給するための、反応管に沿
つて伸びた複数の穴を有するインジエクタと、 ガスを前記インジエクタ内に導入するための、
インジエクタの末端を着脱自在に収納するホルダ
ーであつて、さらにガスが通過できる開口を有す
るホルダーと、 から成るガス導入装置を設けたことを特徴とする
薄膜形成装置。 ３ 請求項１または２記載の装置であつて、 前記インジエクタの穴の大きさおよびそれらの
間の間隔は、反応管内で所定のガスの濃度傾斜が
形成されるように決定される、ところの装置。 ４ 請求項２記載の薄膜形成装置であつて、 前記ホルダーが、開口から流出するガスの流量
を所定の流量にするための調節装置を有する、と
ころの薄膜形成装置。 ５ 請求項４記載の装置であつて、 薄膜形成装置が、縦型ＣＶＤ装置である、とこ
ろの装置。 ６ 請求項５記載の薄膜形成装置であつて、 前記ホルダーが、ガス源に連結される水平部と
、前記インジエクタの末端を収納する上方に伸び
た上方部と、前記開口を有する下方に伸びた下方
部とから成り、薄膜形成装置の下方に位置する、
ところの装置。[Scope of Claim for Utility Model Registration] 1. In a thin film forming apparatus in which a plurality of semiconductor substrates are housed in parallel in a reaction tube and a gas is supplied to form a vapor phase growth layer on the semiconductor substrates, the gas is supplied into the reaction tube. an injector having a plurality of holes extending along the reaction tube for introducing gas into the injector;
A thin film forming apparatus comprising a gas introduction device comprising a holder that removably houses the end of an injector. 2. In a thin film forming apparatus that stores a plurality of semiconductor substrates in parallel in a reaction tube and supplies gas to form a vapor phase growth layer on the semiconductor substrates, a an injector having a plurality of extending holes; for introducing gas into the injector;
A thin film forming apparatus comprising: a holder for removably storing the end of an injector and further having an opening through which gas can pass; and a gas introduction device. 3. The apparatus according to claim 1 or 2, wherein the size of the holes in the injector and the spacing between them are determined so that a predetermined gas concentration gradient is formed within the reaction tube. . 4. The thin film forming apparatus according to claim 2, wherein the holder has an adjusting device for adjusting the flow rate of the gas flowing out from the opening to a predetermined flow rate. 5. The apparatus according to claim 4, wherein the thin film forming apparatus is a vertical CVD apparatus. 6. The thin film forming apparatus according to claim 5, wherein the holder includes a horizontal part connected to a gas source, an upwardly extending upper part that accommodates the end of the injector, and a downwardly extending part having the opening. and a lower part located below the thin film forming apparatus.
However, the device.
JP1990044038U 1990-04-26 1990-04-26 CVD apparatus having gas introduction device Expired - Lifetime JPH0719143Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990044038U JPH0719143Y2 (en) 1990-04-26 1990-04-26 CVD apparatus having gas introduction device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990044038U JPH0719143Y2 (en) 1990-04-26 1990-04-26 CVD apparatus having gas introduction device

Publications (2)

Publication Number Publication Date
JPH044736U true JPH044736U (en) 1992-01-16
JPH0719143Y2 JPH0719143Y2 (en) 1995-05-01

Family

ID=31556980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990044038U Expired - Lifetime JPH0719143Y2 (en) 1990-04-26 1990-04-26 CVD apparatus having gas introduction device

Country Status (1)

Country Link
JP (1) JPH0719143Y2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100230151B1 (en) * 1996-07-23 1999-11-15 윤종용 Apparatus for fixing gas nozzle in vertical furnace of an LPCVD equipment
JP2009224765A (en) * 2008-02-20 2009-10-01 Hitachi Kokusai Electric Inc Substrate processing apparatus
JP2013506300A (en) * 2009-09-25 2013-02-21 フェローテック（ユーエスエー）コーポレイション Hybrid gas injector

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170167023A1 (en) * 2015-12-09 2017-06-15 Lam Research Corporation Silicon or silicon carbide gas injector for substrate processing systems

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62168638U (en) * 1986-04-17 1987-10-26
JPS62190335U (en) * 1986-05-23 1987-12-03

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62168638U (en) * 1986-04-17 1987-10-26
JPS62190335U (en) * 1986-05-23 1987-12-03

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100230151B1 (en) * 1996-07-23 1999-11-15 윤종용 Apparatus for fixing gas nozzle in vertical furnace of an LPCVD equipment
JP2009224765A (en) * 2008-02-20 2009-10-01 Hitachi Kokusai Electric Inc Substrate processing apparatus
JP2013506300A (en) * 2009-09-25 2013-02-21 フェローテック（ユーエスエー）コーポレイション Hybrid gas injector

Also Published As

Publication number Publication date
JPH0719143Y2 (en) 1995-05-01

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