JPS6421926A - Low temperature dry etching apparatus - Google Patents

Low temperature dry etching apparatus

Info

Publication number
JPS6421926A
JPS6421926A JP17700087A JP17700087A JPS6421926A JP S6421926 A JPS6421926 A JP S6421926A JP 17700087 A JP17700087 A JP 17700087A JP 17700087 A JP17700087 A JP 17700087A JP S6421926 A JPS6421926 A JP S6421926A
Authority
JP
Japan
Prior art keywords
substrate
container
cooling
heating
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17700087A
Other languages
Japanese (ja)
Other versions
JP2585277B2 (en
Inventor
Masabumi Kanetomo
Shinichi Taji
Kazunori Tsujimoto
Kiichiro Mukai
Takahiro Oguro
Shigekazu Kieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62177000A priority Critical patent/JP2585277B2/en
Publication of JPS6421926A publication Critical patent/JPS6421926A/en
Application granted granted Critical
Publication of JP2585277B2 publication Critical patent/JP2585277B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain an apparatus characterized by high productivity, in which a cooling container for performing the pretreatment of a substrate and a heating container for post treatment after etching are provided, by coupling the cooling container for cooling the substrate and the heating container for heating the substrate through a reaction container and valves, and providing a conveyer systems for conveying the substrate between the containers. CONSTITUTION:The temperature of a substrate 3, which is arranged on a sample stage 2 in a reaction continer 1, is controlled at 0 deg.C or less. The surface of the substrate 3 is treated with plasma, which is yielded in the container 1. In this apparatus, the reaction container 1, a cooling container 11 having a substrate cooling stage 13 for cooling the substrate and a heating container 18 having a substrate heating stage 21 for heating the substrate are coupled through valves 10 and 17. Conveying systems 15 and 22 for conveying the substrate between the containers 11, 1 and 18, are provided. For example, the substrate 3 is cooled with the substrate cooling stage 13 in the cooling container 11. Thereafter, the substrate 3 is mounted on the low temperature sample stage in the reaction container. The substrate 3 after the dry etching is mounted on the substrate heating stage 21 in the heating container 18. The substrate 3 is heated from the low temperature to room temperature in a short time. Dew is not condensed on the substrate even if it is brought into contact with atmosphere.
JP62177000A 1987-07-17 1987-07-17 Surface treatment equipment Expired - Lifetime JP2585277B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62177000A JP2585277B2 (en) 1987-07-17 1987-07-17 Surface treatment equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62177000A JP2585277B2 (en) 1987-07-17 1987-07-17 Surface treatment equipment

Publications (2)

Publication Number Publication Date
JPS6421926A true JPS6421926A (en) 1989-01-25
JP2585277B2 JP2585277B2 (en) 1997-02-26

Family

ID=16023423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62177000A Expired - Lifetime JP2585277B2 (en) 1987-07-17 1987-07-17 Surface treatment equipment

Country Status (1)

Country Link
JP (1) JP2585277B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4836840A (en) * 1988-09-26 1989-06-06 Hoya Corporation Press-molding device for lenses
JPH03101224A (en) * 1989-09-14 1991-04-26 Matsushita Electron Corp Low-temperature etching device for semiconductor device
US5352327A (en) * 1992-07-10 1994-10-04 Harris Corporation Reduced temperature suppression of volatilization of photoexcited halogen reaction products from surface of silicon wafer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4836840A (en) * 1988-09-26 1989-06-06 Hoya Corporation Press-molding device for lenses
JPH03101224A (en) * 1989-09-14 1991-04-26 Matsushita Electron Corp Low-temperature etching device for semiconductor device
US5352327A (en) * 1992-07-10 1994-10-04 Harris Corporation Reduced temperature suppression of volatilization of photoexcited halogen reaction products from surface of silicon wafer

Also Published As

Publication number Publication date
JP2585277B2 (en) 1997-02-26

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