JPS64270Y2 - - Google Patents
Info
- Publication number
- JPS64270Y2 JPS64270Y2 JP4119183U JP4119183U JPS64270Y2 JP S64270 Y2 JPS64270 Y2 JP S64270Y2 JP 4119183 U JP4119183 U JP 4119183U JP 4119183 U JP4119183 U JP 4119183U JP S64270 Y2 JPS64270 Y2 JP S64270Y2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- polishing
- chuck
- measured
- measuring needle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005498 polishing Methods 0.000 claims description 29
- 239000000523 sample Substances 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 description 35
- 238000005259 measurement Methods 0.000 description 8
- 230000002950 deficient Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Tests Of Electronic Circuits (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Description
【考案の詳細な説明】
この考案はウエハプローバの測定針研磨装置に
係り、特にプローブカード（測定回路実装基板）
に取付けられた測定針を研磨する研磨装置に関す
る。[Detailed description of the invention] This invention relates to a measurement needle polishing device for a wafer prober, and particularly to a probe card (measurement circuit mounting board).
The present invention relates to a polishing device for polishing a measuring needle attached to a.
ウエハプローバは、IC、LSI等の半導体集積回
路素子の諸特性をウエハの状態で測定する測定装
置であり、テスタ（特性判定装置）との連係によ
つて測定、良否の判定を行い、不良素子に不良マ
ークを付すものである。 A wafer prober is a measurement device that measures various characteristics of semiconductor integrated circuit devices such as ICs and LSIs in the wafer state.It measures and determines pass/fail by linking with a tester (characteristic evaluation device), and detects defective devices. A defective mark is attached to the item.
このウエハプローバには、第１図に示すよう
に、被測定ウエハ１が固定されるチヤツク２が設
置されている。このチヤツク２はそのウエハ１の
内の被測定素子を所望の位置に設定するため、Ｘ
−Ｙ軸方向及び上下方向に移動を制御される。 As shown in FIG. 1, this wafer prober is equipped with a chuck 2 to which a wafer 1 to be measured is fixed. This chuck 2 is used to set the device to be measured on the wafer 1 at a desired position.
- Movement is controlled in the Y-axis direction and the vertical direction.
このチヤツク２の上方にはプローブカード３が
取付けられ、このプローブカード３には集積回路
を測定するための測定回路４が実装されていると
ともに、前記チヤツク２の上面に臨むその中央部
分には円形の透孔５が形成されているとともに、
チヤツク２の上面に設置されるウエハ１の集積回
路の電極に対応する複数の測定針６を取付けた針
固定板７が固定されている。各測定針６は測定回
路４に接続され、測定回路４にはウエハプローバ
の本体部に設置された処理回路８及び操作装置９
が接続され、チヤツク２の操作とともに不良素子
の判定を行い、不良素子上に不良マークをインク
で付す。 A probe card 3 is attached above this chuck 2, and a measuring circuit 4 for measuring an integrated circuit is mounted on this probe card 3. A circular A through hole 5 is formed, and
A needle fixing plate 7 having a plurality of measuring needles 6 attached thereto corresponding to the electrodes of the integrated circuits of the wafer 1 installed on the upper surface of the chuck 2 is fixed. Each measuring needle 6 is connected to a measuring circuit 4, which includes a processing circuit 8 and an operating device 9 installed in the main body of the wafer prober.
is connected, and with the operation of chuck 2, a defective element is determined and a defective mark is placed on the defective element with ink.
このようなウエハプローバにおいて、測定針６
の接触抵抗を低下させるため、測定針の接触部分
即ち先端を研磨して測定を行う。従来、この測定
針６の研磨には、シリコンウエハの裏面をポリシ
ユで研磨したもの、或いは第２図に示すように、
前記チヤツク２の上面の被測定ウエハ１の固定位
置の周囲に研磨用やすり１０を設置したものが提
案されている。 In such a wafer prober, the measuring needle 6
In order to reduce the contact resistance of the measuring needle, the contact part, ie, the tip, is polished before measurement. Conventionally, the measuring needle 6 has been polished by polishing the back side of a silicon wafer with polish, or as shown in FIG.
It has been proposed that a polishing file 10 is installed on the upper surface of the chuck 2 around the fixed position of the wafer 1 to be measured.
しかしながら、前者のものはウエハ１の搬送装
置を改造することが必要であるとともに、その調
整に手数を要し、その不備で故障が発生する等、
測定針６の研磨に手数を要する。また、後者のも
のは被測定ウエハ１の大きさを制限してしまうた
め、被測定ウエハ１毎にプローブカード３を用意
することが必要となり、これは実際上不可能であ
る。さらに、後者のように、チヤツク２の周縁部
分に研磨用やすり１０を設置した場合、不良マー
クを付すためのインクで目詰まりを生じ、平行度
が低く、使用時間が短い等の欠点がある。 However, the former method requires modification of the wafer 1 transfer device, requires a lot of effort to adjust, and malfunctions may occur due to deficiencies.
Polishing the measuring needle 6 requires a lot of effort. Furthermore, since the latter method limits the size of the wafer 1 to be measured, it is necessary to prepare a probe card 3 for each wafer 1 to be measured, which is practically impossible. Furthermore, when the polishing file 10 is installed on the peripheral edge of the chuck 2 as in the latter case, there are drawbacks such as clogging with ink for marking defective marks, low parallelism, and short usage time.
この考案は、測定針の研磨が容易に行え、しか
も種々の大きさの被測定ウエハに対応可能にした
ウエハプローバの測定針研磨装置の提供を目的と
する。 The object of this invention is to provide a measuring needle polishing device for a wafer prober that can easily polish the measuring needle and can be used on wafers to be measured of various sizes.
この考案は、被測定ウエハを固定するチヤツク
の中心部に、プローブカードから臨ませられた測
定針を研磨する研磨やすりを設置したことを特徴
とする。 This invention is characterized in that a polishing file for polishing the measuring needle exposed from the probe card is installed in the center of the chuck that fixes the wafer to be measured.
以下この考案を図面に示した実施例を参照して
詳細に説明する。 This invention will be described in detail below with reference to embodiments shown in the drawings.
第３図はこの考案のウエハプローバの測定針研
磨装置の実施例を示し、第１図及び第２図と同一
部分には同一符号が付してある。図において、ウ
エハ１を固定するチヤツク２の中心部分に、円形
の範囲で研磨用やすり１１を形成又は面内に埋込
むように設置し、その表面荒さは、50〜100μに
設定する。また、その範囲は1.5〜２インチに形
成するものとする。 FIG. 3 shows an embodiment of the measuring needle polishing device for a wafer prober of this invention, and the same parts as in FIGS. 1 and 2 are given the same reference numerals. In the figure, a polishing file 11 is formed or embedded in a circular area in the center of a chuck 2 for fixing a wafer 1, and its surface roughness is set to 50 to 100 microns. Moreover, the range shall be 1.5 to 2 inches.
このように構成すれば、被測定ウエハ１は第３
図において矢印Ａで示すように研磨用やすり１１
を形成した部分に固定することができ、その測定
を行うことができる。 With this configuration, the wafer 1 to be measured is
As shown by arrow A in the figure, the polishing file 11
can be fixed to the formed part and its measurement can be performed.
この場合、被測定ウエハ１を固定すると、研磨
用やすり１１は被測定ウエハ１で覆われ、不良マ
ークを付すためのインクが付着することがないの
でその目詰まりが防止でき、寿命を延ばすことが
できる。 In this case, when the wafer 1 to be measured is fixed, the polishing file 11 is covered with the wafer 1 to be measured, and ink for marking a defect does not adhere to the polishing file 11, which prevents clogging and extends the life of the polishing file 11. can.
また、研磨用やすり１１の表面は、チヤツク２
の表面に一致させているので、測定上、被測定ウ
エハ１を固定することについて何等の不都合は生
じないものである。 In addition, the surface of the polishing file 11 has a chuck 2.
Since the wafer 1 is aligned with the surface of the wafer 1, there is no problem in fixing the wafer 1 to be measured during measurement.
そして、測定針６の研磨は、第４図に示すよう
に、被測定ウエハ１を設置していない状態で測定
針６に対してチヤツク２を矢印Ｂで示す上下方向
に移動させ、研磨用やすり１１の面を接触させ、
その先端の研磨を行うことができる。 As shown in FIG. 4, the measuring needle 6 is polished by moving the chuck 2 in the vertical direction indicated by arrow B with respect to the measuring needle 6 without the wafer 1 to be measured, and using a polishing file. 11 sides are brought into contact,
The tip can be polished.
また、研磨用やすり１１はチヤツク２の中心部
分に設置されているため、研磨用やすり１１の平
行度は、被測定ウエハ１の設置と同一条件とな
り、測定針６の研磨を良好に行うことができる。 Furthermore, since the polishing file 11 is installed at the center of the chuck 2, the parallelism of the polishing file 11 is the same as the installation of the wafer 1 to be measured, and the measuring needle 6 can be polished well. can.
さらに、このような位置に研磨用やすり１１を
設置した場合、位置調整等の研磨上の面倒な操作
を必要とせず、極めて容易にその処理を行うこと
ができ、シリコンウエハの裏面に研磨面を形成し
た場合の不都合は全く生じない。 Furthermore, when the polishing file 11 is installed in such a position, the polishing process can be performed extremely easily without the need for troublesome polishing operations such as position adjustment, and the polishing surface can be placed on the back side of the silicon wafer. No inconvenience will occur if it is formed.
以上説明したようにこの考案によれば、被測定
ウエハを固定するチヤツクの中心部に、測定針の
研磨用やすりを設置したので、被測定ウエハの大
きさに制限を受けることがなく、その平行度も被
測定ウエハと同一条件となり、また、不良マーク
用のインクによる目詰まりを防止でき、測定針の
研磨を容易に且つ良好に行うことができる。 As explained above, according to this invention, the file for polishing the measurement needle is installed in the center of the chuck that fixes the wafer to be measured, so there is no restriction on the size of the wafer to be measured, and the The conditions are also the same as those of the wafer to be measured, and clogging due to ink for defective marks can be prevented, and the measuring needle can be easily and satisfactorily polished.
第１図はウエハプローバのプローブカード及び
チヤツク部分の概略を示す説明図、第２図は従来
の研磨用やすりを示す説明図、第３図はこの考案
のウエハプローバの測定針研磨装置の実施例を示
す説明図、第４図はこの考案の実施例であるウエ
ハプローバのプローブカード及びチヤツク部分の
概略を示す説明図である。
１……被測定ウエハ、２……チヤツク、５……
プローブカード、６……測定針。
Fig. 1 is an explanatory diagram showing the outline of the probe card and chuck portion of a wafer prober, Fig. 2 is an explanatory diagram showing a conventional polishing file, and Fig. 3 is an embodiment of the measurement needle polishing device of the wafer prober of this invention. FIG. 4 is an explanatory diagram schematically showing a probe card and a chuck portion of a wafer prober which is an embodiment of this invention. 1...Wafer to be measured, 2...Chick, 5...
Probe card, 6...Measuring needle.
Claims (1)
プローブカードから臨ませられた測定針を研磨す
る研磨やすりを設置したことを特徴とするウエハ
プローバの測定針研磨装置。 At the center of the chuck that holds the wafer under test,
A measuring needle polishing device for a wafer prober, characterized in that a polishing file for polishing a measuring needle facing from a probe card is installed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4119183U JPS59148251U (en) | 1983-03-21 | 1983-03-21 | Wafer prober measurement needle polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4119183U JPS59148251U (en) | 1983-03-21 | 1983-03-21 | Wafer prober measurement needle polishing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59148251U JPS59148251U (en) | 1984-10-03 |
| JPS64270Y2 true JPS64270Y2 (en) | 1989-01-06 |
Family
ID=30171785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4119183U Granted JPS59148251U (en) | 1983-03-21 | 1983-03-21 | Wafer prober measurement needle polishing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59148251U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2711855B2 (en) * | 1988-06-13 | 1998-02-10 | 東京エレクトロン株式会社 | Probe device and inspection method |
-
1983
- 1983-03-21 JP JP4119183U patent/JPS59148251U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59148251U (en) | 1984-10-03 |
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